Nitride-based semiconductor light emitting diode
    1.
    发明授权
    Nitride-based semiconductor light emitting diode 有权
    氮化物半导体发光二极管

    公开(公告)号:US08110847B2

    公开(公告)日:2012-02-07

    申请号:US12003276

    申请日:2007-12-21

    IPC分类号: H01L33/00

    CPC分类号: H01L33/38 H01L33/20 H01L33/42

    摘要: Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.

    摘要翻译: 提供一种包含基板的氮化物系半导体LED, 形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极,从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘,形成在第一导电型氮化物半导体层上,其中没有形成有源层,以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

    Nitride-based semiconductor light emitting diode
    2.
    发明申请
    Nitride-based semiconductor light emitting diode 有权
    氮化物半导体发光二极管

    公开(公告)号:US20080210972A1

    公开(公告)日:2008-09-04

    申请号:US12003276

    申请日:2007-12-21

    IPC分类号: H01L33/00

    CPC分类号: H01L33/38 H01L33/20 H01L33/42

    摘要: Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.

    摘要翻译: 提供一种包含基板的氮化物系半导体LED, 形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极,从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘,形成在第一导电型氮化物半导体层上,其中没有形成有源层,以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

    Nitride-based semiconductor light emitting device
    3.
    发明授权
    Nitride-based semiconductor light emitting device 有权
    基于氮化物的半导体发光器件

    公开(公告)号:US07531841B2

    公开(公告)日:2009-05-12

    申请号:US11651023

    申请日:2007-01-09

    IPC分类号: H01L27/15

    CPC分类号: H01L33/38 H01L33/20 H01L33/32

    摘要: A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.

    摘要翻译: 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极,形成在从p型电极焊盘延伸的线中,以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极,其从p型连接电极的两端沿着n型电极焊盘的方向延伸,p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘,形成在n型氮化物半导体层上,其上没有形成有源层,使得n型电极焊盘面向p型电极焊盘。

    Nitride-based semiconductor light emitting diode
    4.
    发明申请
    Nitride-based semiconductor light emitting diode 有权
    氮化物半导体发光二极管

    公开(公告)号:US20070228388A1

    公开(公告)日:2007-10-04

    申请号:US11651023

    申请日:2007-01-09

    IPC分类号: H01L33/00

    CPC分类号: H01L33/38 H01L33/20 H01L33/32

    摘要: A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.

    摘要翻译: 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极,形成在从p型电极焊盘延伸的线中,以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极,其从p型连接电极的两端沿着n型电极焊盘的方向延伸,p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘,形成在n型氮化物半导体层上,其上没有形成有源层,使得n型电极焊盘面向p型电极焊盘。

    TONER HAVING EXCELLENT ENVIRONMENTAL RESISTANCE, FLUDITY, AND CHARGEABILITY
    6.
    发明申请
    TONER HAVING EXCELLENT ENVIRONMENTAL RESISTANCE, FLUDITY, AND CHARGEABILITY 审中-公开
    具有良好的环境抵抗力,流动性和充电性

    公开(公告)号:US20130273466A1

    公开(公告)日:2013-10-17

    申请号:US13996857

    申请日:2011-12-21

    IPC分类号: G03G9/00 G03G15/08

    CPC分类号: G03G9/0827 G03G9/0819

    摘要: Provided is a toner particle having excellent environmental resistance, fluidity, and chargeability for developing an electrostatic image. The toner particle comprises a coupling resin, a release agent, and a coloring agent, and satisfies Formula (1) below: 8.5≦SMF≦10.5  (1), wherein the surface morphology factor (SMF) of the formula can be represented by following Formula (2): SMF=−log(4/3×π×D3×RD×B×C) [m2/ea]  (2).

    摘要翻译: 提供了一种具有优异的耐环境性,流动性和用于显影静电图像的带电性的调色剂颗粒。 调色剂颗粒包括偶联树脂,脱模剂和着色剂,并且满足下式(1):8.5 @ SMF @ 10.5(1),其中式的表面形态因子(SMF)可以由下式表示: 公式(2):SMF = -log(4/3×pi×D3×RD×B×C)[m2 / ea](2)。

    Vertical gallium nitride based light emitting diode with multiple electrode branches
    8.
    发明授权
    Vertical gallium nitride based light emitting diode with multiple electrode branches 失效
    具有多个电极分支的垂直氮化镓基发光二极管

    公开(公告)号:US07791100B2

    公开(公告)日:2010-09-07

    申请号:US11602285

    申请日:2006-11-21

    IPC分类号: H01L33/00

    CPC分类号: H01L33/20 H01L33/38

    摘要: A vertical GaN-based LED includes an n-type bonding pad; an n-electrode formed under the n-type bonding pad; a light-emitting structure formed by sequentially laminating an n-type GaN layer, an active layer, and a p-type GaN layer under the n-electrode; a p-electrode formed under the light-emitting structure; and a support layer formed under the p-electrode. The light-emitting structure has or or more trenches which are spaced at a predetermined distance with the n-electrode from the outermost side of the light-emitting structure and in which the active layer of the light-emitting structure is removed.

    摘要翻译: 垂直GaN基LED包括n型接合焊盘; 形成在n型焊盘下面的n电极; 通过在n电极下依次层叠n型GaN层,有源层和p型GaN层而形成的发光结构体; 形成在发光结构下的p电极; 以及形成在p电极下方的支撑层。 发光结构具有与n电极与发光结构的最外侧隔开预定距离的沟槽,并且其中除去发光结构的有源层。

    Grape seed extract having neuronal cell-protection activity and the composition comprising the same for preventing and treating degenerative brain disease
    9.
    发明申请
    Grape seed extract having neuronal cell-protection activity and the composition comprising the same for preventing and treating degenerative brain disease 审中-公开
    具有神经元细胞保护活性的葡萄籽提取物和包含其的组合物用于预防和治疗退行性脑病

    公开(公告)号:US20070122504A1

    公开(公告)日:2007-05-31

    申请号:US10595665

    申请日:2004-11-02

    IPC分类号: A61K36/87

    CPC分类号: A61K36/87

    摘要: The present invention relates to a grape seed extract showing neuronal cell protecting activity and the composition comprising the same having neuronal cell protecting activity for preventing and treating degenerative brain disease. The grape seed extract shows potent inhibiting activity of neuronal cell apoptosis occurred in brain ischemia as well as no toxicity, therefore, it can be used as the therapeutics or health food for treating and preventing degenerative brain diseases.

    摘要翻译: 本发明涉及一种显示神经元细胞保护活性的葡萄籽提取物及其组合物,其具有用于预防和治疗退行性脑病的神经元细胞保护活性。 葡萄籽提取物显示脑缺血发生的神经细胞凋亡的有效抑制活性以及无毒性,因此可用作治疗和预防退行性脑疾病的治疗剂或保健食品。

    Liquid crystal display
    10.
    发明授权
    Liquid crystal display 有权
    液晶显示器

    公开(公告)号:US08593605B2

    公开(公告)日:2013-11-26

    申请号:US13352049

    申请日:2012-01-17

    IPC分类号: G02F1/1343

    摘要: The present invention relates to a liquid crystal display including: a first substrate and an opposing second substrate; a liquid crystal layer interposed between the first substrate and the second substrate; a light blocking member disposed on the first substrate or the second substrate; a first field generating electrode disposed on the first substrate; a second field generating electrode disposed on the first substrate and including branch electrodes overlapping the first field generating electrode; and a gate line disposed on the first substrate and extending in a first direction. A branch electrode of the branch electrodes includes a central portion and a first edge portion disposed at one end of the central portion. A first angle formed between the first edge portion and a second direction is greater than a second angle formed between the second direction and the central portion, the second direction being perpendicular to the first direction.

    摘要翻译: 本发明涉及一种液晶显示器,包括:第一基板和相对的第二基板; 插入在第一基板和第二基板之间的液晶层; 设置在所述第一基板或所述第二基板上的遮光构件; 设置在所述第一基板上的第一场产生电极; 第二场产生电极,设置在第一衬底上并且包括与第一场发生电极重叠的分支电极; 以及设置在第一基板上并沿第一方向延伸的栅极线。 分支电极的分支电极包括中心部分和设置在中心部分一端的第一边缘部分。 形成在第一边缘部分和第二方向之间的第一角度大于在第二方向和中心部分之间形成的第二角度,第二方向垂直于第一方向。