公开(公告)号：US08110847B2

公开(公告)日：2012-02-07

申请号：US12003276

申请日：2007-12-21

申请人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

发明人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/42

摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.

摘要翻译： 提供一种包含基板的氮化物系半导体LED， 形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

公开(公告)号：US20080210972A1

公开(公告)日：2008-09-04

申请号：US12003276

申请日：2007-12-21

申请人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyng Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

发明人： Kun Yoo Ko ,  Je Won Kim ,  Dong Woo Kim ,  Hyng Jin Park ,  Seok Min Hwang ,  Seung Wan Chae

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/42

摘要： Provided is a nitride-based semiconductor LED including a substrate; a first conductive-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the first conductive-type nitride semiconductor layer; a second conductive-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the second conductive-type nitride semiconductor layer; a second conductive-type electrode pad formed on the transparent electrode; a plurality of second conductive-type electrodes extending from the second conductive-type electrode pad in one direction so as to be formed in a line; a first conductive-type electrode pad formed on the first conductive-type nitride semiconductor layer, where the active layer is not formed, so as to be positioned on the same side as the second conductive-type electrode pad; and a plurality of first conductive-type electrodes extending from the first conductive-type electrode pad in one direction so as to be formed in a line.

摘要翻译： 提供一种包含基板的氮化物系半导体LED， 形成在所述基板上的第一导电型氮化物半导体层; 形成在所述第一导电型氮化物半导体层的预定区域上的有源层; 形成在所述有源层上的第二导电型氮化物半导体层; 形成在所述第二导电型氮化物半导体层上的透明电极; 形成在所述透明电极上的第二导电型电极焊盘; 多个第二导电型电极，从第二导电型电极焊盘沿一个方向延伸以形成一条线; 第一导电型电极焊盘，形成在第一导电型氮化物半导体层上，其中没有形成有源层，以便位于与第二导电型电极焊盘相同的一侧; 以及从第一导电型电极焊盘沿一个方向延伸以形成一行的多个第一导电型电极。

公开(公告)号：US07531841B2

公开(公告)日：2009-05-12

申请号：US11651023

申请日：2007-01-09

申请人： Kun Yoo Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

发明人： Kun Yoo Ko ,  Bang Won Oh ,  Hun Joo Hahm ,  Je Won Kim ,  Hyung Jin Park ,  Seok Min Hwang ,  Dong Woo Kim

IPC分类号： H01L27/15

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32

摘要： A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a transparent electrode formed on the p-type nitride semiconductor layer; a p-type electrode pad formed on the transparent electrode; a pair of p-type connection electrodes formed in a line extending from the p-type electrode pad so as to have an inclination angle of less than 90 degrees with respect to one side of the transparent electrode adjacent to the p-type electrode pad; a pair of p-electrodes extending from both ends of the p-type connection electrodes in the direction of the n-type electrode pad, the p-electrode being formed in parallel to one side of the adjacent transparent electrode; and an n-type electrode pad formed on the n-type nitride semiconductor layer, on which the active layer is not formed, such that the n-type electrode pad faces the p-type electrode pad.

摘要翻译： 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的透明电极; 形成在透明电极上的p型电极焊盘; 一对p型连接电极，形成在从p型电极焊盘延伸的线中，以相对于与p型电极焊盘相邻的透明电极的一侧具有小于90度的倾斜角; 一对p电极，其从p型连接电极的两端沿着n型电极焊盘的方向延伸，p电极与相邻的透明电极的一侧平行地形成; 以及n型电极焊盘，形成在n型氮化物半导体层上，其上没有形成有源层，使得n型电极焊盘面向p型电极焊盘。

公开(公告)号：US08168995B2

公开(公告)日：2012-05-01

申请号：US11543231

申请日：2006-10-05

申请人： Kun Yoo Ko ,  Seok Min Hwang ,  Hyung Jin Park

发明人： Kun Yoo Ko ,  Seok Min Hwang ,  Hyung Jin Park

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20 ,  H01L33/32 ,  H01L2224/05552

摘要： A nitride based semiconductor LED is provided. In the nitride based semiconductor LED, an n-type nitride semiconductor layer is formed on a substrate. The n-type nitride semiconductor layer has the top surface divided into a first region and a second region with a finger structure, so that the first region and the second region are meshed with each other. An active layer is formed on the second region of the n-type nitride semiconductor layer. A p-type nitride semiconductor layer is formed on the active layer, and a reflective electrode is formed on the p-type nitride semiconductor layer. A p-electrode is formed on the reflective electrode, and an n-electrode is formed on the first region of the n-type nitride semiconductor layer. A plurality of n-type electrode pads are formed on the n-electrode. At least one of the n-type electrode pads are arranged adjacent to different sides of the n-electrode.

摘要翻译： 提供了一种基于氮化物的半导体LED。 在氮化物系半导体LED中，在基板上形成n型氮化物半导体层。 n型氮化物半导体层的顶表面被划分为具有手指结构的第一区域和第二区域，使得第一区域和第二区域彼此啮合。 在n型氮化物半导体层的第二区域上形成有源层。 在有源层上形成p型氮化物半导体层，在p型氮化物半导体层上形成反射电极。 在反射电极上形成p电极，在n型氮化物半导体层的第一区域上形成n电极。 在n电极上形成多个n型电极焊盘。 n型电极焊盘中的至少一个被布置成与n电极的不同侧相邻。

公开(公告)号：US07709845B2

公开(公告)日：2010-05-04

申请号：US11588330

申请日：2006-10-27

申请人： Kun Yoo Ko ,  Young Ho Park ,  Bok Ki Min ,  Hyung Jin Park ,  Seok Min Hwang

发明人： Kun Yoo Ko ,  Young Ho Park ,  Bok Ki Min ,  Hyung Jin Park ,  Seok Min Hwang

IPC分类号： H01L27/15

CPC分类号： H01L33/20 ,  H01L33/14 ,  H01L33/32

摘要： The invention relates to a high-quality semiconductor light emitting device which suppresses current concentration. The semiconductor light emitting device includes an n-type semiconductor layer, an active layer and a p-type semiconductor layer sequentially formed on a substrate. The semiconductor light emitting device further includes a p-electrode formed on the p-type semiconductor layer and an n-electrode formed on a surface of a mesa-etched portion of the n-type semiconductor layer. A trench is formed in the n-type semiconductor layer to prevent current concentration. The trench is extended from an upper surface of the mesa-etched portion of the n-type semiconductor layer or from a bottom surface of the substrate into the n-type semiconductor layer at a predetermined depth.

摘要翻译： 本发明涉及抑制电流浓度的高质量半导体发光器件。 半导体发光器件包括依次形成在衬底上的n型半导体层，有源层和p型半导体层。 半导体发光器件还包括形成在p型半导体层上的p电极和形成在n型半导体层的台面蚀刻部分的表面上的n电极。 在n型半导体层中形成沟槽以防止电流集中。 沟槽从n型半导体层的台面蚀刻部分的上表面或从基板的底表面延伸到预定深度的n型半导体层。

公开(公告)号：US07297988B2

公开(公告)日：2007-11-20

申请号：US11319343

申请日：2005-12-28

申请人： Seung Wan Chae ,  Suk Kil Yoon ,  Kun Yoo Ko ,  Hyun Wook Shim ,  Bong Il Yi

发明人： Seung Wan Chae ,  Suk Kil Yoon ,  Kun Yoo Ko ,  Hyun Wook Shim ,  Bong Il Yi

IPC分类号： H01L29/22 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/32 ,  H01L33/42

摘要： The present invention relates to a flip chip type nitride semiconductor light emitting device having p-type and n-type nitride semiconductor layers, and an active layer in between. The invention also has an ohmic contact layer formed on the p-type nitride semiconductor layer, a light-transmitting conductive oxide layer formed on the ohmic contact layer, and a highly reflective metal layer formed on the light-transmitting conductive oxide layer.

摘要翻译： 本发明涉及具有p型和n型氮化物半导体层的倒装芯片型氮化物半导体发光器件及其间的有源层。 本发明还具有形成在p型氮化物半导体层上的欧姆接触层，形成在欧姆接触层上的透光性导电氧化物层和形成在透光性导电氧化物层上的高反射金属层。

公开(公告)号：US07777245B2

公开(公告)日：2010-08-17

申请号：US11499727

申请日：2006-08-07

申请人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

发明人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

公开(公告)号：US20100276725A1

公开(公告)日：2010-11-04

申请号：US12838031

申请日：2010-07-16

申请人： Seok Min HWANG ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

发明人： Seok Min HWANG ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

IPC分类号： H01L33/36

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

公开(公告)号：US08258539B2

公开(公告)日：2012-09-04

申请号：US12838031

申请日：2010-07-16

申请人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

发明人： Seok Min Hwang ,  Hyun Kyung Kim ,  Kun Yoo Ko ,  Sang Su Hong ,  Kyu Han Lee ,  Bok Ki Min

IPC分类号： H01L33/00

CPC分类号： H01L33/38 ,  H01L33/20

摘要： The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.

摘要翻译： 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层，以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合，从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。

公开(公告)号：US07087985B2

公开(公告)日：2006-08-08

申请号：US10853236

申请日：2004-05-26

申请人： Young Ho Park ,  Hyo Kyoung Cho ,  Seung Jin Yoo ,  Kun Yoo Ko

发明人： Young Ho Park ,  Hyo Kyoung Cho ,  Seung Jin Yoo ,  Kun Yoo Ko

IPC分类号： H01L23/495

CPC分类号： H01L33/382 ,  H01L24/45 ,  H01L2224/45 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2224/45099 ,  H01L2224/43 ,  H01L2924/01006

摘要： In a nitride semiconductor LED having a light emitting structure, an n-doped semiconductor layer has a first region and a second region surrounding the first region, an active layer is formed on the second region of the n-doped semiconductor layer, and a p-doped nitride semiconductor layer is formed on the active layer. A p-electrode is formed on the p-doped semiconductor layer. An n-electrode is formed on the first region of the n-doped nitride semiconductor layer.

摘要翻译： 在具有发光结构的氮化物半导体LED中，n掺杂半导体层具有围绕第一区域的第一区域和第二区域，在n掺杂半导体层的第二区域上形成有源层，p 在有源层上形成掺杂氮化物半导体层。 在p掺杂半导体层上形成p电极。 在n掺杂氮化物半导体层的第一区域上形成n电极。