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公开(公告)号：US06812496B2
公开(公告)日：2004-11-02
申请号：US10334140
申请日：2002-12-31
IPC分类号： H01L2715
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/2231 , H01S5/3202 , H01S2301/173
摘要： A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.
摘要翻译： 也可以使用III族氮化物半导体作为基板的氮化物半导体激光器件具有优异的操作特性和较长的激光振荡寿命。 在形成在GaN衬底上的III族氮化物半导体的分层结构中，激光光波导区域形成在垂直贯穿衬底的位错集中区域的正上方的别处，并且电极形成在 层叠结构，并且位于基底的底表面上，位于位错集中区域正上方或下方。 在层状结构的顶表面的一部分中，并且在位错集中区域的正上方和下方的衬底的底表面的一部分中，可以形成电介质层以防止电极与那些区域接触。
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2.发明申请公开(公告)号：US20050048682A1
公开(公告)日：2005-03-03
申请号：US10917514
申请日：2004-08-13
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/2231 , H01S5/3202 , H01S2301/173
摘要： A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.
摘要翻译： 也可以使用III族氮化物半导体作为基板的氮化物半导体激光器件具有优异的操作特性和较长的激光振荡寿命。 在形成在GaN衬底上的III族氮化物半导体的分层结构中，激光光波导区域形成在垂直贯穿衬底的位错集中区域的正上方的别处，并且电极形成在 层叠结构，并且位于基底的底表面上，位于位错集中区域正上方或下方。 在层状结构的顶表面的一部分中，并且在位错集中区域的正上方和下方的衬底的底表面的一部分中，可以形成电介质层以防止电极与那些区域接触。
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3.发明授权公开(公告)号：US07015058B2
公开(公告)日：2006-03-21
申请号：US10917514
申请日：2004-08-13
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/2231 , H01S5/3202 , H01S2301/173
摘要： A nitride semiconductor laser device using a group III nitride semiconductor also as a substrate offers excellent operation characteristics and a long laser oscillation life. In a layered structure of a group III nitride semiconductor formed on a GaN substrate, a laser optical waveguide region is formed elsewhere than right above a dislocation-concentrated region extending so as to vertically penetrate the substrate, and electrodes are formed on the top surface of the layered structure and on the bottom surface of the substrate elsewhere than right above or below the dislocation-concentrated region. In a portion of the top surface of the layered structure and in a portion of the bottom surface of the substrate right above and below the dislocation-concentrated region, dielectric layers may be formed to prevent the electrodes from making contact with those regions.
摘要翻译： 也可以使用III族氮化物半导体作为基板的氮化物半导体激光器件具有优异的操作特性和较长的激光振荡寿命。 在形成在GaN衬底上的III族氮化物半导体的分层结构中，激光光波导区域形成在垂直贯穿衬底的位错集中区域的正上方的别处，并且电极形成在 层叠结构，并且位于基底的底表面上，位于位错集中区域正上方或下方。 在层状结构的顶表面的一部分中，并且在位错集中区域的正上方和下方的衬底的底表面的一部分中，可以形成电介质层以防止电极与那些区域接触。
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公开(公告)号：US07842956B2
公开(公告)日：2010-11-30
申请号：US11636570
申请日：2006-12-11
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0425 , H01S2301/176
摘要： On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.
摘要翻译： 在形成于基板上的氮化物半导体层叠部上依次形成绝缘膜和p侧电极。 此外，端部电极保护层形成在p侧电极的上方，围绕将发生分裂的位置。
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公开(公告)号：US20070131960A1
公开(公告)日：2007-06-14
申请号：US11636570
申请日：2006-12-11
IPC分类号： H01L33/00
CPC分类号： H01S5/32341 , H01S5/0202 , H01S5/0425 , H01S2301/176
摘要： On a nitride semiconductor layered portion formed on a substrate, there are formed an insulating film and a p-side electrode in this order. Furthermore, an end portion electrode protection layer is formed above the p-side electrode, around a position where cleavage will take place.
摘要翻译： 在形成于基板上的氮化物半导体层叠部上依次形成绝缘膜和p侧电极。 此外，端部电极保护层形成在p侧电极的上方，围绕将发生分裂的位置。
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公开(公告)号：US06618416B1
公开(公告)日：2003-09-09
申请号：US09807003
申请日：2001-06-22
申请人： Mototaka Taneya , Kunihiro Takatani , Susumu Ohmi
发明人： Mototaka Taneya , Kunihiro Takatani , Susumu Ohmi
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0021 , H01S5/2004 , H01S5/2086 , H01S5/2205 , H01S5/2206 , H01S5/221 , H01S5/2218 , H01S5/222 , H01S5/2231 , H01S5/3213 , H01S5/3216 , H01S5/32325 , H01S5/32341 , H01S5/34333
摘要： An InGaAlN-based semiconductor laser device, comprising a first layer of a first conductivity type, an active layer having a smaller forbidden band than that of the first layer, and a second layer of a second conductivity type having a larger forbidden band than that of the active layer. The second layer includes a flat region and a stripe-shaped projecting structure. A stripe-shaped optical waveguide forming layer of the second conductivity type having a larger refractive index than that of the second layer is formed on the stripe-shaped projecting structure. A current-constricting layer of the first conductivity type or of a high resistance is formed for covering a top surface of the flat region of the second layer, a side surface of the projecting structure of the second layer, and a side surface of the optical waveguide forming layer. A difference between a thermal expansion coefficient of the current-constricting layer and a thermal expansion coefficient of the second layer is in the range of −4×10−9/° C. to +4×10−9/° C.
摘要翻译： 1.一种InGaAlN系半导体激光器件，其特征在于，具有第一导电型的第一层，比第一层的禁带宽的有源层，以及具有比第一导电类型更大的禁带宽度的第二导电类型的第二层， 活动层。 第二层包括平坦区域和条形突起结构。 在条状突起结构上形成具有比第二层折射率大的第二导电类型的条形光波导形成层。 形成第一导电型或高电阻的电流限制层，用于覆盖第二层的平坦区域的顶表面，第二层的突出结构的侧表面和光学器件的侧表面 波导形成层。 电流限制层的热膨胀系数与第二层的热膨胀系数之间的差在-4×10 -9 /℃至+ 4×10 -9 /℃的范围内。
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7.发明申请Nitride Semiconductor Laser Device and Nitride Semiconductor Laser Apparatus 有权氮化物半导体激光器件和氮化物半导体激光器件公开(公告)号：US20090095964A1
公开(公告)日：2009-04-16
申请号：US11922986
申请日：2006-06-02
申请人： Shigetoshi Ito , Kunihiro Takatani , Susumu Omi
发明人： Shigetoshi Ito , Kunihiro Takatani , Susumu Omi
IPC分类号： H01L33/00
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/0021 , H01S5/2214 , H01S5/2231 , H01S5/3063 , H01S5/34333
摘要： In one embodiment of the present invention, a long-life nitride semiconductor laser element is disclosed wherein voltage characteristics do not deteriorate even when the element is driven at high current density. Specifically disclosed is a nitride semiconductor laser element which includes a p-type nitride semiconductor and a p-side electrode formed on the p-type nitride semiconductor. In at least one embodiment, the p-side electrode has a first layer which is in direct contact with the p-type nitride semiconductor and a conductive second layer formed on the first layer, and the second layer contains a metal element selected from the group consisting of Ti, Zr, Hf, W, Mo and Nb, and an oxygen element.
摘要翻译： 在本发明的一个实施例中，公开了一种长寿命氮化物半导体激光元件，其中即使元件以高电流密度驱动，电压特性也不会劣化。 具体公开了一种氮化物半导体激光元件，其包括形成在p型氮化物半导体上的p型氮化物半导体和p侧电极。 在至少一个实施方案中，p侧电极具有与p型氮化物半导体直接接触的第一层和形成在第一层上的导电第二层，第二层含有选自以下的金属元素： 由Ti，Zr，Hf，W，Mo和Nb组成，以及氧元素。
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公开(公告)号：US20070029571A1
公开(公告)日：2007-02-08
申请号：US11496524
申请日：2006-08-01
IPC分类号： H01L33/00
CPC分类号： H01L33/483 , H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01S5/02212 , H01S5/02224 , H01S5/024 , H01S5/32341 , H01L2924/00014
摘要： In a nitride semiconductor light-emitting device, a cap is pressure-bonded on the top surface of a stem under electric discharge to form a package. The package encloses a heatsink, a nitride semiconductor laser element, electrode pins, and wires, and has sealed inside it a gas containing oxygen as a sealed atmosphere. At least the inner surface of the cap is plated with Ni and Pd, which are metals that can occlude hydrogen.
摘要翻译： 在氮化物半导体发光装置中，在放电状态下将帽压在杆的顶面上，形成封装。 封装封装散热片，氮化物半导体激光元件，电极针和电线，并在其内部密封含有氧的气体作为密封的气氛。 至少盖的内表面镀有Ni和Pd，它们是可以堵塞氢的金属。
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9.发明授权Nitride semiconductor laser device and nitride semiconductor laser apparatus 有权氮化物半导体激光装置和氮化物半导体激光装置公开(公告)号：US07804880B2
公开(公告)日：2010-09-28
申请号：US11922986
申请日：2006-06-02
申请人： Shigetoshi Ito , Kunihiro Takatani , Susumu Omi
发明人： Shigetoshi Ito , Kunihiro Takatani , Susumu Omi
IPC分类号： H01S3/097
CPC分类号： H01S5/0425 , B82Y20/00 , H01S5/0021 , H01S5/2214 , H01S5/2231 , H01S5/3063 , H01S5/34333
摘要： In one embodiment of the present invention, a long-life nitride semiconductor laser element is disclosed wherein voltage characteristics do not deteriorate even when the element is driven at high current density. Specifically disclosed is a nitride semiconductor laser element which includes a p-type nitride semiconductor and a p-side electrode formed on the p-type nitride semiconductor. In at least one embodiment, the p-side electrode has a first layer which is in direct contact with the p-type nitride semiconductor and a conductive second layer formed on the first layer, and the second layer contains a metal element selected from the group consisting of Ti, Zr, Hf, W, Mo and Nb, and an oxygen element.
摘要翻译： 在本发明的一个实施例中，公开了一种长寿命氮化物半导体激光元件，其中即使元件以高电流密度驱动，电压特性也不会劣化。 具体公开了一种氮化物半导体激光元件，其包括形成在p型氮化物半导体上的p型氮化物半导体和p侧电极。 在至少一个实施方案中，p侧电极具有与p型氮化物半导体直接接触的第一层和形成在第一层上的导电第二层，第二层含有选自以下的金属元素： 由Ti，Zr，Hf，W，Mo和Nb组成，以及氧元素。
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公开(公告)号：US20100193839A1
公开(公告)日：2010-08-05
申请号：US12656481
申请日：2010-02-01
申请人： Kunihiro Takatani
发明人： Kunihiro Takatani
IPC分类号： H01L29/778
CPC分类号： H01L29/7786
摘要： A III-V-group compound semiconductor device includes a substrate, a channel layer provided over the substrate, a barrier layer provided on the channel layer so as to form a hetero-interface, a plurality of electrodes provided on the barrier layer, an insulator layer provided to cover an entire upper surface of the barrier layer except for at least partial regions of the electrodes, and a hydrogen-absorbing layer stacked on the insulator layer or an integrated layer in which an hydrogen-absorbing layer is integrated with the insulator layer.
摘要翻译： III-V族化合物半导体器件包括衬底，设置在衬底上的沟道层，设置在沟道层上以形成异质界面的势垒层，设置在阻挡层上的多个电极，绝缘体 层，其设置成覆盖除了电极的至少部分区域之外的阻挡层的整个上表面，以及层叠在绝缘体层上的吸氢层或其中吸收层与绝缘体层一体化的一体层 。
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