公开(公告)号：US20090314632A1

公开(公告)日：2009-12-24

申请号：US12583742

申请日：2009-08-25

申请人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

发明人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

IPC分类号： C23C14/34 ,  B05D5/12

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

摘要： A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

摘要翻译： 公开了一种形成具有AP2 /偶联/ AP1构型的钉扎层的CPP-GMR自旋阀的方法，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-Z）/ Fe X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％ 为75〜100原子％。 优选地，z为90以提供使电迁移最小化的面心立方结构。 任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。 与具有常规AP2 Co50Fe50或Co75Fe25单层的自旋阀相比，EM性能显着提高。 MR比也增加，RA维持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

公开(公告)号：US07583481B2

公开(公告)日：2009-09-01

申请号：US11234719

申请日：2005-09-23

申请人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

发明人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

IPC分类号： G11B5/33 ,  G11B5/127

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

摘要： A CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe5 or Co75Fe25 single layer. The MR ratio of the spin valve is also increased and the RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

摘要翻译： 公开了具有AP2 /耦合/ AP1构型的钉扎层的CPP-GMR自旋阀，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％，z为75至100 原子％。 优选地，z为90以提供使电迁移最小化的面心立方结构。 任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。 与使用常规AP2 Co50Fe5或Co75Fe25单层的自旋阀相比，EM性能显着提高。 自旋阀的MR比也增加，RA保持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

公开(公告)号：US08012316B2

公开(公告)日：2011-09-06

申请号：US12583742

申请日：2009-08-25

申请人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

发明人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

IPC分类号： C23C14/14

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

摘要： A method of forming a CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe50 or Co75Fe25 single layer. MR ratio is also increased and RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

摘要翻译： 公开了一种形成具有AP2 /偶联/ AP1构型的钉扎层的CPP-GMR自旋阀的方法，其中AP2部分是具有由CoZFe（100-Z）/ Fe（100-Z）/ Fe X）TaX / CoZFe（100-Z）或CoZFe（100-Z）/ FeYCo（100-Y）/ CoZFe（100-Z），其中x为3至30原子％，y为40至100原子％ 为75〜100原子％。 优选地，z为90以提供使电迁移最小化的面心立方结构。 任选地，中间层由富Fe合金如FeCr，FeV，FeW，FeZr，FeNb，FeHf或FeMo组成。 与具有常规AP2 Co50Fe50或Co75Fe25单层的自旋阀相比，EM性能显着提高。 MR比也增加，RA维持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

公开(公告)号：US20070070556A1

公开(公告)日：2007-03-29

申请号：US11234719

申请日：2005-09-23

申请人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

发明人： Kunliang Zhang ,  Dan Abels ,  Min Li ,  Chyu-Jiuh Torng ,  Chen-Jung Chien ,  Yu-Hsia Chen

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： H01L43/10 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  H01F10/16 ,  H01F10/3236 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302

摘要： A CPP-GMR spin valve having a pinned layer with an AP2/coupling/AP1 configuration is disclosed wherein the AP2 portion is a FCC-like trilayer having a composition represented by CoZFe(100-Z)/Fe(100-X)TaX/CoZFe(100-Z) or CoZFe(100-Z)/FeYCo(100-Y)/CoZFe(100-Z) where x is 3 to 30 atomic %, y is 40 to 100 atomic %, and z is 75 to 100 atomic %. Preferably, z is 90 to provide a face centered cubic structure that minimizes electromigration. Optionally, the middle layer is comprised of an Fe rich alloy such as FeCr, FeV, FeW, FeZr, FeNb, FeHf, or FeMo. EM performance is improved significantly compared to a spin valve with a conventional AP2 Co50Fe5 or Co75Fe25 single layer. The MR ratio of the spin valve is also increased and the RA is maintained at an acceptable level. The coupling layer is preferably Ru and the AP1 layer may be comprised of a lamination of CoFe and Cu layers as in [CoFe/Cu]2/CoFe.

摘要翻译： 公开了一种具有AP2 /耦合/ AP1构型的钉扎层的CPP-GMR自旋阀，其中AP2部分是具有由Co＆lt; Z＆gt; Fe（100）表示的组成的FCC状三层 -Z）/ Fe（100-X）Ta x / Co Z（Fe）（100-Z）单层。 自旋阀的MR比也增加，RA保持在可接受的水平。 耦合层优选为Ru，并且AP1层可以由如[CoFe / Cu] 2 / CoFe中的CoFe和Cu层的层叠构成。

公开(公告)号：US08125744B2

公开(公告)日：2012-02-28

申请号：US12076438

申请日：2008-03-18

申请人： Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masahiro Takashita ,  Michiko Hara ,  Dan Abels ,  Xin Li

发明人： Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masahiro Takashita ,  Michiko Hara ,  Dan Abels ,  Xin Li

IPC分类号： G11B5/39

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  H01L43/08

摘要： A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed through the insulating layer; a biasing mechanism for stabilizing the free magnetization layer; a shielding mechanism for ensuring a reproducing resolution of the magneto-resistance effect element; and a pair of electrodes for flowing a current perpendicular to a film surface of the magneto-resistance effect element; wherein a resistance area product (RA:Ω×μm2) is set to 0.00062×√{square root over ((GAP))}×TW+0.06 when a track width of the magneto-resistance effect element is defined as TW (nm) and a gap length of the magneto-resistance effect element is defined as GAP (nm).

摘要翻译： 垂直于平面磁阻效应元件的电流包括：由固定磁化层，自由磁化层和包含绝缘层的复合间隔层和通过绝缘层形成的电流通路构成的磁阻效应膜; 用于稳定自由磁化层的偏置机构; 用于确保磁阻效应元件的再现分辨率的屏蔽机构; 以及一对电极，用于垂直于磁阻效应元件的膜表面流动电流; 其中，当磁阻效应元件的磁道宽度被定义为TW（nm）时，电阻面积乘积（RA:＆OHgr;×μm2）被设定为0.00062×√{（GAP））的平方根}×TW + 0.06 ），磁阻效应元件的间隙长度被定义为GAP（nm）。

公开(公告)号：US20080239586A1

公开(公告)日：2008-10-02

申请号：US12076438

申请日：2008-03-18

申请人： Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masahiro Takashita ,  Michiko Hara ,  Dan Abels ,  Xin Li

发明人： Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masahiro Takashita ,  Michiko Hara ,  Dan Abels ,  Xin Li

IPC分类号： H04B7/204

CPC分类号： G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  H01L43/08

摘要： A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed through the insulating layer; a biasing mechanism for stabilizing the free magnetization layer; a shielding mechanism for ensuring a reproducing resolution of the magneto-resistance effect element; and a pair of electrodes for flowing a current perpendicular to a film surface of the magneto-resistance effect element; wherein a resistance area product (RA:Ω×μm2) is set to 0.00062×√{square root over ((GAP))}×TW+0.06 when a track width of the magneto-resistance effect element is defined as TW (nm) and a gap length of the magneto-resistance effect element is defined as GAP (nm).

摘要翻译： 垂直于平面磁阻效应元件的电流包括：由固定磁化层，自由磁化层和包含绝缘层的复合间隔层和通过绝缘层形成的电流通路构成的磁阻效应膜; 用于稳定自由磁化层的偏置机构; 用于确保磁阻效应元件的再现分辨率的屏蔽机构; 以及一对电极，用于垂直于磁阻效应元件的膜表面流动电流; 其中当磁阻效应元件的磁道宽度被限定时，电阻面积乘积（RA：Omega xmum 2）被设定为0.00062×{（（GAP））}×TW + 0.06的平方根 因为TW（nm）和磁阻效应元件的间隙长度被定义为GAP（nm）。