公开(公告)号：US20170033119A1

公开(公告)日：2017-02-02

申请号：US15165123

申请日：2016-05-26

申请人： Kwang Chul Park ,  Jang Gn YUN ,  Won Bong JUNG

发明人： Kwang Chul Park ,  Jang Gn YUN ,  Won Bong JUNG

IPC分类号： H01L27/115

CPC分类号： H01L27/11582 ,  H01L27/11565 ,  H01L27/1157

摘要： Semiconductor device are provided including a stacked structure having gate electrodes and interlayer insulating layers alternately stacked on a substrate; channel holes extending perpendicular to the substrate through the stacked structure and including channel regions therein; and horizontal parts at lower portions of the stacked structure and including areas in which the channel regions are horizontally elongated from the channel holes. The horizontal parts surround respective channel holes and are connected to each other between at a least portion of the channel holes.

摘要翻译： 提供半导体器件，其包括层叠结构，其具有交替层叠在基板上的栅电极和层间绝缘层; 通孔穿过层叠结构垂直于衬底延伸并且在其中包括沟道区域; 以及层叠结构的下部的水平部分，并且包括沟道区域从通道孔水平伸长的区域。 水平部分围绕相应的通道孔，并且在通道孔的至少部分之间彼此连接。