公开(公告)号：US20080285978A1

公开(公告)日：2008-11-20

申请号：US12053694

申请日：2008-03-24

申请人： Kwang Seong Choi ,  Yong Duck Chung ,  Jae Sik Sim ,  Jong Tae Moon ,  Hyun Kyu Yu ,  Je Ha Kim

发明人： Kwang Seong Choi ,  Yong Duck Chung ,  Jae Sik Sim ,  Jong Tae Moon ,  Hyun Kyu Yu ,  Je Ha Kim

IPC分类号： H04B10/00

CPC分类号： H04B10/25752 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Provided is an optical hybrid module in which an optical device, a filter, an amplifier and an antenna are hybrid-integrated, which includes: a silicon optical bench disposed on a substrate and having an optical fiber and an optical device; an amplifier disposed on the substrate and connected to the optical device disposed on the silicon optical bench to amplify a signal transmitted from the optical device; and an antenna disposed on the substrate to be connected to the amplifier and transmitting a signal amplified by the amplifier. Thus, a foot-print module may be embodied by disposing an antenna and a filter on a single- or multi-layer substrate and providing a bias required for the optical device and the amplifier through a solder ball. Also, due to the antenna and filter disposed on the substrate, an expensive connector is not needed, and thus a production costs can be reduced.

摘要翻译： 提供了一种光混合模块，其中光学装置，滤波器，放大器和天线是混合集成的，其包括：设置在基板上并具有光纤和光学装置的硅光学台; 放大器，设置在所述基板上并连接到设置在所述硅光学台上的所述光学装置，以放大从所述光学装置发送的信号; 以及设置在所述基板上以连接到所述放大器并且发射由所述放大器放大的信号的天线。 因此，可以通过在单层或多层衬底上设置天线和滤波器并通过焊球提供光学器件和放大器所需的偏置来实现脚印模块。 此外，由于设置在基板上的天线和滤波器，不需要昂贵的连接器，因此可以降低生产成本。

公开(公告)号：US20100246451A1

公开(公告)日：2010-09-30

申请号：US12676749

申请日：2008-05-23

申请人： Yong Duck Chung ,  Kwang Seong Choi ,  Jae Sik Sim ,  Yong Hwan Kwon ,  Sung Bok Kim ,  Je Ha Kim

发明人： Yong Duck Chung ,  Kwang Seong Choi ,  Jae Sik Sim ,  Yong Hwan Kwon ,  Sung Bok Kim ,  Je Ha Kim

IPC分类号： H04W92/02 ,  H04L5/14

CPC分类号： H04B10/25759 ,  H04W88/10

摘要： Provided are a method and device for separating and converting multiband signals. The device includes a photoelectric converter for converting an externally received optical signal into an electrical signal, a first switch for separating the converted electrical signal into signals according to frequency bands, a first mobile communication band-pass amplifier for amplifying a mobile communication network signal of the signals separated by the first switch, a broadband up-converter for up-converting a baseband signal of the signals separated by the first switch into a broadband signal, a first broadband amplifier for amplifying the broadband signal output from the broadband up-converter, and a transmitter for wirelessly transmitting the signals amplified by the first mobile communication band-pass amplifier and the first broadband amplifier.

摘要翻译： 提供了用于分离和转换多频带信号的方法和装置。 该装置包括用于将外部接收的光信号转换为电信号的光电转换器，用于根据频带将转换后的电信号分离为信号的第一开关，用于放大移动通信网络信号的第一移动通信带通放大器 由第一开关分离的信号，用于将由第一开关分离的信号的基带信号上变频为宽带信号的宽带上变频器，用于放大从宽带上变频器输出的宽带信号的第一宽带放大器， 以及用于无线地发送由第一移动通信带通放大器和第一宽带放大器放大的信号的发射机。

公开(公告)号：US08335200B2

公开(公告)日：2012-12-18

申请号：US12676749

申请日：2008-05-23

申请人： Yong Duck Chung ,  Kwang Seong Choi ,  Jae Sik Sim ,  Yong Hwan Kwon ,  Sung Bok Kim ,  Je Ha Kim

发明人： Yong Duck Chung ,  Kwang Seong Choi ,  Jae Sik Sim ,  Yong Hwan Kwon ,  Sung Bok Kim ,  Je Ha Kim

IPC分类号： H04H1/00

CPC分类号： H04B10/25759 ,  H04W88/10

摘要： Provided are a method and device for separating and converting multiband signals. The device includes a photoelectric converter for converting an externally received optical signal into an electrical signal, a first switch for separating the converted electrical signal into signals according to frequency bands, a first mobile communication band-pass amplifier for amplifying a mobile communication network signal of the signals separated by the first switch, a broadband up-converter for up-converting a baseband signal of the signals separated by the first switch into a broadband signal, a first broadband amplifier for amplifying the broadband signal output from the broadband up-converter, and a transmitter for wirelessly transmitting the signals amplified by the first mobile communication band-pass amplifier and the first broadband amplifier.

摘要翻译： 提供了用于分离和转换多频带信号的方法和装置。 该装置包括用于将外部接收的光信号转换为电信号的光电转换器，用于根据频带将转换后的电信号分离为信号的第一开关，用于放大移动通信网络信号的第一移动通信带通放大器 由第一开关分离的信号，用于将由第一开关分离的信号的基带信号上变频为宽带信号的宽带上变频器，用于放大从宽带上变频器输出的宽带信号的第一宽带放大器， 以及用于无线地发送由第一移动通信带通放大器和第一宽带放大器放大的信号的发射机。

公开(公告)号：US08592247B2

公开(公告)日：2013-11-26

申请号：US13273257

申请日：2011-10-14

申请人： Jae Sik Sim ,  Ki Soo Kim ,  Bong Ki Mheen ,  Myoung Sook Oh ,  Yong Hwan Kwon ,  Eun Soo Nam

发明人： Jae Sik Sim ,  Ki Soo Kim ,  Bong Ki Mheen ,  Myoung Sook Oh ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC分类号： H01L21/00

CPC分类号： H01L31/107 ,  H01L31/184 ,  Y02E10/544

摘要： A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate.

摘要翻译： 一种方法包括：依次在衬底表面上生长光吸收层，分级层，电场缓冲层和放大层，形成外延晶片; 在放大层上形成扩散控制层; 形成用于保护扩散控制层上的扩散控制层的保护层; 通过从保护层蚀刻到放大层的预定深度来形成蚀刻部分; 通过图案化所述保护层来形成第一图案形成部分; 通过使扩散材料扩散到所述蚀刻部分和所述第一图案形成部分，在所述放大层处形成接合区域和保护区域; 去除扩散控制层和保护层，并形成连接到放大层上的结区的第一电极; 以及在所述基板的后表面上形成第二电极。

公开(公告)号：US07310469B2

公开(公告)日：2007-12-18

申请号：US11481580

申请日：2006-07-06

申请人： Sahng Gi Park ,  Eun Deok Sim ,  Jeong Woo Park ,  Jae Sik Sim ,  Yong Soon Baek

发明人： Sahng Gi Park ,  Eun Deok Sim ,  Jeong Woo Park ,  Jae Sik Sim ,  Yong Soon Baek

IPC分类号： G02B6/10 ,  G02B6/26 ,  H04B10/06

CPC分类号： G02B6/12004 ,  H01L31/0304 ,  H01L31/105

摘要： A waveguide PIN photodiode is provided. The waveguide PIN photodiode includes a lower light guide layer, a light absorption layer, an upper light guide layer, and a cladding layer. The lower light guide is formed on a substrate, and the light absorption layer is formed on the lower light guide layer. The upper light guide layer is formed on the light absorption layer, and the cladding layer is formed on the upper light guide layer. The lower light guide layer, the light absorption layer, and the upper light guide layer constitute a core layer, which is an optical waveguide, and graded index distribution is symmetrically formed in a depth direction, centering around the light absorption layer having a highest refractive index.

摘要翻译： 提供了一种波导PIN光电二极管。 波导PIN光电二极管包括下导光层，光吸收层，上导光层和包覆层。 下部光导件形成在基板上，并且光吸收层形成在下部光导层上。 上光导层形成在光吸收层上，包层形成在上光导层上。 下导光层，光吸收层和上导光层构成作为光波导的芯层，并且在深度方向上对称地形成渐变折射率分布，以具有最高折射率的光吸收层为中心 指数。

公开(公告)号：US08338868B2

公开(公告)日：2012-12-25

申请号：US12626343

申请日：2009-11-25

申请人： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

发明人： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

摘要： An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

摘要翻译： 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路， 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。

公开(公告)号：US20100133590A1

公开(公告)日：2010-06-03

申请号：US12626343

申请日：2009-11-25

申请人： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

发明人： Bong Ki Mheen ,  Albert J. P. Theuwissen ,  Jae Sik Sim ,  Mi Ran Park ,  Yong Hwan Kwon ,  Eun Soo Nam

IPC分类号： H01L31/14

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14641

摘要： An image sensor with a shared photodiode is provided. The image sensor includes at least two unit pixels, each of which includes a photodiode, a diffusion region which gathers electrons from the photodiode, a transfer transistor which connects the photodiode with the diffusion region, and a readout circuit which reads out a signal from the diffusion region. Photodiodes of neighboring unit pixels are disposed symmetrically to be adjacent to one another to form a shared photodiode. The image sensor does not have a STI region which causes a dark current restricting its performance and does not require a basic minimum design factor (a distance or an area) related to a STI region. A region corresponding to a STI region may be used as a region of a photodiode or for additional pixel scaling. Therefore, a limitation in scaling of a photodiode is overcome, and pixel performance is improved in spite of pixel scaling.

摘要翻译： 提供具有共享光电二极管的图像传感器。 图像传感器包括至少两个单位像素，每个单元像素包括光电二极管，从光电二极管收集电子的扩散区域，连接光电二极管与扩散区域的传输晶体管，以及读出电路， 扩散区。 相邻单位像素的光电二极管彼此对称设置以形成共用光电二极管。 图像传感器不具有导致暗电流限制其性能的STI区域，并且不需要与STI区域相关的基本最小设计因子（距离或面积）。 可以将对应于STI区域的区域用作光电二极管的区域或用于附加像素缩放。 因此，克服了光电二极管的缩放的限制，并且尽管像素缩放来提高像素性能。