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    Controlled polymerization on plasma reactor wall
    3.
    发明授权
    Controlled polymerization on plasma reactor wall 失效
    等离子体反应器壁上的控制聚合

    公开(公告)号：US07122125B2

    公开(公告)日：2006-10-17

    申请号：US10288344

    申请日：2002-11-04

    申请人： Shashank C. Deshmukh ,  Thorsten B. Lill

    发明人： Shashank C. Deshmukh ,  Thorsten B. Lill

    IPC分类号： B44C1/22

    CPC分类号： H01J37/32009 ,  H01J37/32532 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/67069

    摘要： An integrated etch process, for example as used for etching an anti-reflection layer and an underlying aluminum layer, in which the chamber wall polymerization is controlled by coating polymer onto the sidewall by a plasma deposition process prior to inserting the wafer into the chamber, etching the structure, and after removing the wafer from the chamber, plasma cleaning the polymer from the chamber wall. The process is process is particularly useful when the etching is performed in a multi-step process and the polymer is used for passivating the etched structure, for example, a sidewall in an etched structure and in which the first etching step deposits polymer and the second etching step removes polymer. The controlled polymerization eliminates interactions of the etching with the chamber wall material, produces repeatable results between wafers, and eliminates in the etching plasma instabilities associated with changing wall conditions.

    摘要翻译： 例如用于蚀刻抗反射层和下层铝层的集成蚀刻工艺，其中通过在将晶片插入室内之前通过等离子体沉积工艺将聚合物涂覆到侧壁上来控制室壁聚合， 蚀刻结构，并且在从腔室中取出晶片之后，等离子体从室壁清洗聚合物。 当以多步法进行蚀刻时，该方法特别有用，并且该聚合物用于钝化蚀刻结构，例如蚀刻结构中的侧壁，并且其中第一蚀刻步骤沉积聚合物，第二蚀刻步骤沉积聚合物 蚀刻步骤除去聚合物。 受控聚合消除了蚀刻与室壁材料的相互作用，在晶片之间产生可重复的结果，并消除了与改变壁面条件相关的蚀刻等离子体不稳定性。

    METHODS OF TRIMMING AMORPHOUS CARBON FILM FOR FORMING ULTRA THIN STRUCTURES ON A SUBSTRATE
    6.
    发明申请
    METHODS OF TRIMMING AMORPHOUS CARBON FILM FOR FORMING ULTRA THIN STRUCTURES ON A SUBSTRATE 审中-公开
    用于形成基底上超薄结构的非晶碳膜的方法

    公开(公告)号：US20090004875A1

    公开(公告)日：2009-01-01

    申请号：US12163888

    申请日：2008-06-27

    申请人： Meihua Shen ,  Diana Xiaobing Ma ,  Wendy H. Yeh ,  Kenneth MacWilliams ,  Wei Liu ,  Thorsten B. Lill

    发明人： Meihua Shen ,  Diana Xiaobing Ma ,  Wendy H. Yeh ,  Kenneth MacWilliams ,  Wei Liu ,  Thorsten B. Lill

    IPC分类号： H01L21/308

    CPC分类号： H01L21/0337

    摘要： Methods for forming an ultra thin structure using a method that includes trimming a mask layer during an etching process are provided. The embodiments described herein may be advantageously utilized to fabricate a submicron structure on a substrate having a critical dimension less than 55 nm and beyond. In one embodiment, a method of forming a submicron structure on a substrate may include providing a substrate having a patterned photoresist layer disposed on a film stack into an etch chamber, wherein the film stack includes at least a hardmask layer disposed on an underlying layer, trimming the photoresist layer to a first predetermined critical dimension, etching the hardmask layer through openings defined by the trimmed photoresist layer, trimming the hardmask layer to a second predetermined critical dimension, and etching the underlying layer through openings defined by the trimmed hardmask layer.

    摘要翻译： 提供了使用包括在蚀刻处理期间修整掩模层的方法来形成超薄结构的方法。 本文描述的实施例可有利地用于在临界尺寸小于55nm及以上的衬底上制造亚微米结构。 在一个实施例中，在衬底上形成亚微米结构的方法可以包括提供具有设置在膜堆叠上的图案化光致抗蚀剂层进入蚀刻室的衬底，其中所述膜堆叠包括至少设置在下层上的硬掩模层， 将光致抗蚀剂层修剪到第一预定临界尺寸，通过由修剪的光致抗蚀剂层限定的开口蚀刻硬掩模层，将硬掩模层修剪到第二预定临界尺寸，以及通过由修剪的硬掩模层限定的开孔蚀刻下层。

    Multiple stage process for cleaning process chambers
    8.
    发明授权
    Multiple stage process for cleaning process chambers 失效
    清洗处理室的多阶段过程

    公开(公告)号：US06872322B1

    公开(公告)日：2005-03-29

    申请号：US09362924

    申请日：1999-07-27

    申请人： Waiching Chow ,  Raney Williams ,  Thorsten B. Lill ,  Arthur Y. Chen

    发明人： Waiching Chow ,  Raney Williams ,  Thorsten B. Lill ,  Arthur Y. Chen

    IPC分类号： H01L21/302 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/3213 ,  H01L21/48

    CPC分类号： H01J37/32862 ,  H01L21/02071 ,  H01L21/32137

    摘要： A process for etching multiple layers on a substrate 25 in an etching chamber 30 and cleaning a multilayer etchant residue formed on the surfaces of the walls 45 and components of the etching chamber 30. In multiple etching steps, process gas comprising different compositions of etchant gas is used to etch layers on the substrate 25 thereby depositing a compositionally variant etchant residue inside the chamber 30. In one cleaning step, a first cleaning gas is added to the process gas to clean a first residue or to suppress deposition of the first residue onto the chamber surfaces. In a second cleaning step, another residue composition is cleaned off the chamber surfaces using a second cleaning gas composition.

    摘要翻译： 在蚀刻室30中蚀刻衬底25上的多个层并清洁形成在壁45的表面上的多层蚀刻残渣和蚀刻室30的部件的方法。在多个蚀刻步骤中，包括不同组成的蚀刻气体 用于蚀刻衬底25上的层，从而在室30内​​沉积组成变化的蚀刻剂残留物。在一个清洁步骤中，将第一清洁气体加入到工艺气体中以清洁第一残留物或抑制第一残留物沉积到 室表面。 在第二清洁步骤中，使用第二清洁气体组合物从室表面清除另外的残余物组合物。

    Focused ion beam source method and apparatus
    9.
    发明授权
    Focused ion beam source method and apparatus 失效
    聚焦离子束源方法及装置

    公开(公告)号：US6137110A

    公开(公告)日：2000-10-24

    申请号：US134928

    申请日：1998-08-17

    申请人： Michael J. Pellin ,  Keith R. Lykke ,  Thorsten B. Lill

    发明人： Michael J. Pellin ,  Keith R. Lykke ,  Thorsten B. Lill

    IPC分类号： G01Q10/00 ,  H01J27/24 ,  H01J27/00

    CPC分类号： H01J37/08 ,  H01J27/24 ,  H01J2237/08 ,  H01J2237/0815 ,  H01J2237/31749

    摘要： A focused ion beam having a cross section of submicron diameter, a high ion current, and a narrow energy range is generated from a target comprised of particle source material by laser ablation. The method involves directing a laser beam having a cross section of critical diameter onto the target, producing a cloud of laser ablated particles having unique characteristics, and extracting and focusing a charged particle beam from the laser ablated cloud. The method is especially suited for producing focused ion beams for semiconductor device analysis and modification.

    摘要翻译： 通过激光烧蚀从由粒子源材料构成的靶产生具有亚微米直径，高离子电流和窄能量范围的横截面的聚焦离子束。 该方法包括将具有临界直径横截面的激光束引导到目标上，产生具有独特特征的激光烧蚀颗粒云，以及从激光烧蚀云提取和聚焦带电粒子束。 该方法特别适用于生产用于半导体器件分析和修改的聚焦离子束。