Light emitting diode having electrode extensions
    1.
    发明授权
    Light emitting diode having electrode extensions 有权
    具有电极延伸的发光二极管

    公开(公告)号:US08525212B2

    公开(公告)日:2013-09-03

    申请号:US12962365

    申请日:2010-12-07

    IPC分类号: H01L33/38

    CPC分类号: H01L33/38 H01L33/20 H01L33/42

    摘要: An exemplary embodiment of the present invention discloses a light emitting diode including a lower contact layer having a first edge, a second edge opposite to the first edge, a third edge connecting the first edge to the second edge, and a fourth edge opposite to the third edge, a mesa structure arranged on the lower contact layer, the mesa structure including an active layer and an upper contact layer, a first electrode pad arranged on the lower contact layer, a second electrode pad arranged on the mesa structure, a first lower extension and a second lower extension extending from the first electrode pad towards the second edge, distal ends of the first lower extension and the second lower extension being farther away from each other than front ends thereof contacting the first electrode pad, and a first upper extension, a second upper extension, and a third upper extension extending from the second electrode pad. In addition, the first upper extension and the second upper extension extend from the second electrode pad to enclose the first lower extension and the second lower extension, and the third upper extension extends to a region between the first lower extension and the second lower extension.

    摘要翻译: 本发明的一个示例性实施例公开了一种发光二极管,包括具有第一边缘,与第一边缘相对的第二边缘,连接第一边缘和第二边缘的第三边缘以及与第一边缘相对的第四边缘的下部接触层 第三边缘,布置在下接触层上的台面结构,台面结构包括有源层和上接触层,布置在下接触层上的第一电极焊盘,布置在台面结构上的第二电极焊盘,第一下部 延伸部分和从第一电极焊盘朝向第二边缘延伸的第二下部延伸部分,第一下部延伸部分和第二下部延伸部分的远端彼此远离与第一电极焊盘接触的前端,第一上延伸部分 ,第二上延伸部和从第二电极焊盘延伸的第三上延伸部。 此外,第一上部延伸部分和第二上部延伸部分从第二电极焊盘延伸以包围第一下部延伸部分和第二下部延伸部分,并且第三上部延伸部延伸到第一下部延伸部分和第二下部延伸部分之间的区域。

    Light emitting diode having distributed Bragg reflector
    2.
    发明授权
    Light emitting diode having distributed Bragg reflector 有权
    具有分布式布拉格反射器的发光二极管

    公开(公告)号:US08373188B2

    公开(公告)日:2013-02-12

    申请号:US13100879

    申请日:2011-05-04

    IPC分类号: H01L33/00

    摘要: Exemplary embodiments of the present invention provide light-emitting diodes having a distributed Bragg reflector. A light-emitting diode (LED) according to an exemplary embodiment includes a light-emitting structure arranged on a first surface of a substrate, the light-emitting structure including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. A first distributed Bragg reflector is arranged on a second surface of the substrate opposite to the first surface, the first distributed Bragg reflector to reflect light emitted from the light-emitting structure. The first distributed Bragg reflector has a reflectivity of at least 90% with respect to light of a first wavelength in a blue wavelength range, light of a second wavelength in a green wavelength range, and light of a third wavelength in a red wavelength range. The first distributed Bragg reflector has a laminate structure having an alternately stacked SiO2 layer and Nb2O5 layer.

    摘要翻译: 本发明的示例性实施例提供了具有分布式布拉格反射器的发光二极管。 根据示例性实施例的发光二极管(LED)包括布置在基板的第一表面上的发光结构,所述发光结构包括第一导电类型半导体层,第二导电类型半导体层, 以及插入在第一导电型半导体层和第二导电型半导体层之间的有源层。 第一分布式布拉格反射器布置在基板的与第一表面相对的第二表面上,第一分布布拉格反射器用于反射从发光结构发射的光。 第一分布布拉格反射器相对于蓝色波长范围内的第一波长的光,绿色波长范围内的第二波长的光和红色波长范围内的第三波长的光具有至少90%的反射率。 第一分布布拉格反射器具有层叠结构,其具有交替层叠的SiO 2层和Nb 2 O 5层。

    Light emitting diode with improved luminous efficiency
    3.
    发明授权
    Light emitting diode with improved luminous efficiency 有权
    发光二极管,发光效率提高

    公开(公告)号:US08878220B2

    公开(公告)日:2014-11-04

    申请号:US13209765

    申请日:2011-08-15

    摘要: Exemplary embodiments of the present invention relate to light emitting diodes. A light emitting diode according to an exemplary embodiment of the present invention includes a substrate having a first side edge and a second side edge, and a light emitting structure arranged on the substrate. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A transparent electrode layer including a concave portion and a convex portion is arranged on the second conductivity-type semiconductor layer. A first electrode pad contacts an upper surface of the first conductivity-type semiconductor layer and is located near a center of the first side edge. Two second electrode pads are located near opposite distal ends of the second side edge to supply electric current to the second conductivity-type semiconductor layer. A first pad extension extends from the first electrode pad and a second pad extension extends from each of the two second electrode pads.

    摘要翻译: 本发明的示例性实施例涉及发光二极管。 根据本发明的示例性实施例的发光二极管包括具有第一侧边缘和第二侧边缘的基板和布置在基板上的发光结构。 发光结构包括第一导电型半导体层,有源层和第二导电型半导体层。 在第二导电型半导体层上配置有包含凹部和凸部的透明电极层。 第一电极焊盘接触第一导电类型半导体层的上表面并且位于第一侧边缘的中心附近。 两个第二电极焊盘位于第二侧边缘的相对的远端附近,以向第二导电类型半导体层提供电流。 第一焊盘延伸部从第一电极焊盘延伸,并且第二焊盘延伸部从两个第二电极焊盘中的每一个延伸。

    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD
    5.
    发明申请
    LIGHT EMITTING DIODE CHIP HAVING ELECTRODE PAD 有权
    具有电极板的发光二极管芯片

    公开(公告)号:US20130234192A1

    公开(公告)日:2013-09-12

    申请号:US13885777

    申请日:2011-02-28

    IPC分类号: H01L33/46

    摘要: Disclosed herein is an LED chip including electrode pads. The LED chip includes a semiconductor stack including a first conductive type semiconductor layer, a second conductive type semiconductor layer on the first conductive type semiconductor layer, and an active layer interposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer; a first electrode pad located on the second conductive type semiconductor layer opposite to the first conductive type semiconductor layer; a first electrode extension extending from the first electrode pad and connected to the first conductive type semiconductor layer; a second electrode pad electrically connected to the second conductive type semiconductor layer; and an insulation layer interposed between the first electrode pad and the second conductive type semiconductor layer. The LED chip includes the first electrode pad on the second conductive type semiconductor layer, thereby increasing a light emitting area.

    摘要翻译: 本文公开了包括电极焊盘的LED芯片。 LED芯片包括:第一导电型半导体层,第一导电型半导体层上的第二导电型半导体层和介于第一导电型半导体层和第二导电型半导体层之间的有源层的半导体堆叠; 位于与第一导电类型半导体层相对的第二导电类型半导体层上的第一电极焊盘; 从所述第一电极焊盘延伸并连接到所述第一导电型半导体层的第一电极延伸部; 电连接到第二导电类型半导体层的第二电极焊盘; 以及插入在第一电极焊盘和第二导电型半导体层之间的绝缘层。 LED芯片包括在第二导电类型半导体层上的第一电极焊盘,由此增加发光面积。

    Accessory for Electronic Device
    8.
    发明申请

    公开(公告)号:US20220166455A1

    公开(公告)日:2022-05-26

    申请号:US17532081

    申请日:2021-11-22

    摘要: Disclosed is an accessory for an electronic device, which is attached to the rear surface of an electronic device or an electronic device case. A first embodiment includes a cone having an empty space therein, a wrinkle part formed on a body thereof, and an upper portion and a lower portion that are open, an inverted cone having an empty space therein, a wrinkle part formed on a body thereof, an upper portion that is open, and a lower portion having a protrusion extending therefrom, the protrusion being composed of a neck part and a head part, a clamping ring, which is positioned inside the cone and coupled to the neck part of the protrusion in a state in which the protrusion is inserted into an upper opening of the cone, and a neck cylinder for surrounding the neck part of the protrusion.