公开(公告)号：US20090013139A1

公开(公告)日：2009-01-08

申请号：US12164462

申请日：2008-06-30

申请人： Kyoung-Gu WOO ,  Ki-Yong Lee ,  Hee-Seon Park ,  In-Sun Kang

发明人： Kyoung-Gu WOO ,  Ki-Yong Lee ,  Hee-Seon Park ,  In-Sun Kang

IPC分类号： G06F12/16

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/04 ,  G11C29/74 ,  G11C29/82 ,  G11C2211/5643

摘要： An apparatus for preventing data loss of a nonvolatile memory device and a method thereof are presented The apparatus includes a nonvolatile memory including a memory cell which writes bit information to a first page and a second page included in a first block using plural states which are implemented using at least 2 bits, and a data-processing unit which writes the bit information of the first page to a second block in the nonvolatile memory while the bit information is written to the second page after the bit information is written to the first page.

摘要翻译： 本发明提供了一种防止非易失存储器件的数据丢失的装置及其方法。该装置包括：非易失性存储器，包括使用多个状态将第一页写入位信息的第一页和包含在第一块中的第二页的存储单元 使用至少2位，以及数据处理单元，其在将位信息写入第一页之后将位信息写入第二页时，将第一页的位信息写入非易失性存储器中的第二块。

公开(公告)号：US08423706B2

公开(公告)日：2013-04-16

申请号：US12164462

申请日：2008-06-30

申请人： Kyoung-Gu Woo ,  Ki-Yong Lee ,  Hee-Seon Park ,  In-Sun Kang

发明人： Kyoung-Gu Woo ,  Ki-Yong Lee ,  Hee-Seon Park ,  In-Sun Kang

IPC分类号： G06F12/00

CPC分类号： G11C16/10 ,  G11C11/5628 ,  G11C16/04 ,  G11C29/74 ,  G11C29/82 ,  G11C2211/5643

摘要： An apparatus for preventing data loss of a nonvolatile memory device and a method thereof are presented The apparatus includes a nonvolatile memory including a memory cell which writes bit information to a first page and a second page included in a first block using plural states which are implemented using at least 2 bits, and a data-processing unit which writes the bit information of the first page to a second block in the nonvolatile memory while the bit information is written to the second page after the bit information is written to the first page.

摘要翻译： 本发明提供了一种防止非易失存储器件的数据丢失的装置及其方法。该装置包括：非易失性存储器，包括使用多个状态将第一页写入位信息的第一页和包含在第一块中的第二页的存储单元 使用至少2位，以及数据处理单元，其在将位信息写入第一页之后将位信息写入第二页时，将第一页的位信息写入非易失性存储器中的第二块。

公开(公告)号：US07991946B2

公开(公告)日：2011-08-02

申请号：US12195588

申请日：2008-08-21

申请人： Ki-Yong Lee ,  Hyo-Jun Kim ,  Hee-Seon Park ,  Kyoung-Gu Woo

发明人： Ki-Yong Lee ,  Hyo-Jun Kim ,  Hee-Seon Park ,  Kyoung-Gu Woo

IPC分类号： G06F12/10

CPC分类号： G06F12/0246 ,  G06F11/1435 ,  G06F2212/1032 ,  G06F2212/1036 ,  G06F2212/1041 ,  G06F2212/7201 ,  G06F2212/7203

摘要： An apparatus usable with a flash memory as storage and a method of operating the same are provided, which can provide an optimized architecture to a flash memory through combination of a flash transition layer (FTL) with a database. The apparatus includes a flash memory, a device driver to manage a mapping table between logical addresses and physical addresses in accordance with a data operation in the flash memory, and a control unit to perform data recovery of the flash memory by requesting the mapping table through an interface provided by the device driver.

摘要翻译： 提供了一种可用于闪存作为存储的装置及其操作方法，其可以通过闪存过渡层（FTL）与数据库的组合来向闪存提供优化的体系结构。 该装置包括闪速存储器，根据闪速存储器中的数据操作来管理逻辑地址和物理地址之间的映射表的设备驱动器，以及控制单元，通过请求映射表来执行闪存的数据恢复 由设备驱动程序提供的接口。

公开(公告)号：US20130185321A1

公开(公告)日：2013-07-18

申请号：US13528292

申请日：2012-06-20

申请人： Seung-Woo RYU ,  Seok-Jin Hong ,  Kyoung-Gu Woo ,  Ki-Yong Lee

发明人： Seung-Woo RYU ,  Seok-Jin Hong ,  Kyoung-Gu Woo ,  Ki-Yong Lee

IPC分类号： G06F17/30

CPC分类号： G06F17/30516

摘要： An apparatus and a method of optimizing queries through scheduling User Defined Operators (UDOs) in a Data Stream Management System (DSMS), are provided. The apparatus includes a query optimizer configured to receive queries, each of the queries including the UDOs and data streams subject to respective operations of the UDOs, and group the data streams and UDOs into scheduling units, each of the scheduling units including one of the data streams and one of the UDOs. The apparatus further includes a scheduler configured to schedule an execution order in which the scheduling units are executed.

摘要翻译： 提供了一种通过调度数据流管理系统（DSMS）中的用户定义运算符（UDO）来优化查询的设备和方法。 该装置包括：查询优化器，被配置为接收查询，每个查询包括UDO和经受UDO各自操作的数据流，并将数据流和UDO分组成调度单元，每个调度单元包括数据之一 流和其中一个UDO。 该装置还包括调度器，其被配置为调度其中执行调度单元的执行顺序。

公开(公告)号：US08954460B2

公开(公告)日：2015-02-10

申请号：US13528292

申请日：2012-06-20

申请人： Seung-Woo Ryu ,  Seok-Jin Hong ,  Kyoung-Gu Woo ,  Ki-Yong Lee

发明人： Seung-Woo Ryu ,  Seok-Jin Hong ,  Kyoung-Gu Woo ,  Ki-Yong Lee

IPC分类号： G06T17/30

CPC分类号： G06F17/30516

摘要： An apparatus and a method of optimizing queries through scheduling User Defined Operators (UDOs) in a Data Stream Management System (DSMS), are provided. The apparatus includes a query optimizer configured to receive queries, each of the queries including the UDOs and data streams subject to respective operations of the UDOs, and group the data streams and UDOs into scheduling units, each of the scheduling units including one of the data streams and one of the UDOs. The apparatus further includes a scheduler configured to schedule an execution order in which the scheduling units are executed.

摘要翻译： 提供了一种通过调度数据流管理系统（DSMS）中的用户定义运算符（UDO）来优化查询的设备和方法。 该装置包括：查询优化器，被配置为接收查询，每个查询包括UDO和经受UDO各自操作的数据流，并将数据流和UDO分组成调度单元，每个调度单元包括数据之一 流和其中一个UDO。 该装置还包括调度器，其被配置为调度其中执行调度单元的执行顺序。

公开(公告)号：US20130199570A1

公开(公告)日：2013-08-08

申请号：US13825150

申请日：2011-04-27

申请人： Man-Hee Lee ,  Ki-Yong Lee ,  Chang-Nam Song

发明人： Man-Hee Lee ,  Ki-Yong Lee ,  Chang-Nam Song

IPC分类号： A47L9/00

CPC分类号： A47L9/009 ,  A47L2201/022 ,  A47L2201/04 ,  G05D1/0234 ,  G05D2201/0203

摘要： Disclosed are a cleaning robot system and its method for controlling which make it possible to reliably and quickly clean with the aid of the cleaning robot. The cleaning robot system comprises at least one external device each formed of an indicator and a virtual wall setting function, with the aid of which cleaning work can be performed by the unit of blocks about a cleaning area reference point, not leaving non-cleaned area behind. Since the access of the cleaning robot can be restricted by means of a virtual wall set by an external device, any damages of furniture due to a collision of the cleaning robot can be prevented, and the cleaning robot can be barred from escaping from the set cleaning area.

摘要翻译： 公开了一种清洁机器人系统及其控制方法，其使得可以借助于清洁机器人可靠且快速地清洁。 清洁机器人系统包括至少一个外部设备，每个外部设备由指示器和虚拟墙壁设置功能构成，借助于这些单元可以通过清洁区域参考点执行清洁工作，而不会留下未清洁区域 背后。 由于可以通过外部设备设置的虚拟壁来限制清洁机器人的通路，所以可以防止由于清洁机器人的碰撞而导致的家具的任何损坏，并且可以禁止清洁机器人从集合中逸出 清洁区域。

公开(公告)号：US08409887B2

公开(公告)日：2013-04-02

申请号：US12713846

申请日：2010-02-26

申请人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Tae-Hoon Yang ,  Jin-Wook Seo ,  Soo-Beom Jo ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Maxim Lisachenko ,  Yun-Mo Chung ,  Bo-Kyung Choi ,  Jong-Ryuk Park ,  Ki-Yong Lee

IPC分类号： H01L21/00

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

公开(公告)号：US08384087B2

公开(公告)日：2013-02-26

申请号：US12805995

申请日：2010-08-27

申请人： Yong-Duck Son ,  Ki-Yong Lee ,  Joon-Hoo Choi ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung ,  Dong-Hyun Lee ,  Byung-Soo So ,  Hyun-Woo Koo ,  Ivan Maidanchuk ,  Jong-Won Hong ,  Heung-Yeol Na ,  Seok-Rak Chang

发明人： Yong-Duck Son ,  Ki-Yong Lee ,  Joon-Hoo Choi ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung ,  Dong-Hyun Lee ,  Byung-Soo So ,  Hyun-Woo Koo ,  Ivan Maidanchuk ,  Jong-Won Hong ,  Heung-Yeol Na ,  Seok-Rak Chang

IPC分类号： H01L27/14

CPC分类号： H01L29/66757 ,  H01L27/1277 ,  H01L27/3262

摘要： A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

摘要翻译： 薄膜晶体管包括衬底，衬底上的缓冲层，包括源极/漏极区域和缓冲层上的沟道区域的半导体层，对应于沟道区域的栅极绝缘层，对应于沟道区域的栅电极 以及与半导体层电连接的源极/漏极。 沟道区域的多晶硅层可以仅包括低角度晶界，并且可以在离开沟道区域的半导体层的区域中设置高角度晶界。

公开(公告)号：US08350267B2

公开(公告)日：2013-01-08

申请号：US12104749

申请日：2008-04-17

申请人： Jae-Bon Koo ,  Ji-Yong Park ,  Sang-Il Park ,  Ki-Yong Lee ,  Ul-Ho Lee

发明人： Jae-Bon Koo ,  Ji-Yong Park ,  Sang-Il Park ,  Ki-Yong Lee ,  Ul-Ho Lee

IPC分类号： H01L27/14

CPC分类号： G09G3/3275 ,  H01L27/1214 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78645 ,  H01L29/78672 ,  H01L29/78696

摘要： A high-speed flat panel display has thin film transistors in a pixel array portion in which a plurality of pixels are arranged and a driving circuit portion for driving the pixels of the pixel array portion, which have different resistance values than each other or have different geometric structures than each other. The flat panel display comprises a pixel array portion where a plurality of pixels are arranged, and a driving circuit portion for driving the pixels of the pixel array portion. The thin film transistors in the pixel array portion and the driving circuit portion have different resistance values in their gate regions or drain regions than each other, or have different geometric structures than each other. One thin film transistor has a zigzag shape in its gate region or drain region or has an offset region.

摘要翻译： 高速平板显示器在其中排列有多个像素的像素阵列部分中具有薄膜晶体管，以及用于驱动像素阵列部分的像素的驱动电路部分，其具有彼此不同的电阻值或具有不同的像素阵列部分 几何结构比彼此。 平板显示器包括其中布置有多个像素的像素阵列部分和用于驱动像素阵列部分的像素的驱动电路部分。 像素阵列部分和驱动电路部分中的薄膜晶体管在其栅极区域或漏极区域中具有彼此不同的电阻值，或者具有彼此不同的几何结构。 一个薄膜晶体管在其栅极区域或漏极区域中具有锯齿形状或具有偏移区域。

公开(公告)号：US20120326157A1

公开(公告)日：2012-12-27

申请号：US13313555

申请日：2011-12-07

申请人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

发明人： Byoung-Keon Park ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jin-Wook Seo ,  Ki-Yong Lee

IPC分类号： H01L29/786 ,  H01L33/08 ,  H01L33/16 ,  H01L21/336

CPC分类号： H01L27/1288 ,  H01L27/3262 ,  H01L29/66757

摘要： A method of manufacturing a TFT, including forming a buffer layer, an amorphous silicon layer, an insulating layer, and a first conductive layer on a substrate, forming a polycrystalline silicon layer by crystallizing the amorphous silicon layer, forming a semiconductor layer, a gate insulating layer, and a gate electrode that have a predetermined shape by simultaneously patterning the polycrystalline silicon layer, the insulating layer, and the first conductive layer, wherein the polycrystalline silicon layer is further etched to produce an undercut recessed a distance compared to sidewalls of the insulating layer and the first conductive layer, forming source and drain regions within the semiconductor layer by doping corresponding portions of the semiconductor layer, forming an interlayer insulating layer on the gate electrode, the interlayer insulating layer covering the gate insulating layer and forming source and drain electrodes that are electrically connected to source and drain regions respectively.

摘要翻译： 一种制造TFT的方法，包括在衬底上形成缓冲层，非晶硅层，绝缘层和第一导电层，通过使非晶硅层结晶形成多晶硅层，形成半导体层，栅极 绝缘层和通过同时构图多晶硅层，绝缘层和第一导电层而具有预定形状的栅电极，其中进一步蚀刻多晶硅层以产生凹陷距离相比于 绝缘层和第一导电层，通过掺杂半导体层的相应部分在半导体层内形成源极和漏极区域，在栅电极上形成层间绝缘层，覆盖栅极绝缘层的层间绝缘层和形成源极和漏极 与源极和漏极电连接的电极 地区。