Dual damascene interconnection with metal-insulator-metal-capacitor and method of fabricating the same
    3.
    发明授权
    Dual damascene interconnection with metal-insulator-metal-capacitor and method of fabricating the same 失效
    金属绝缘体 - 金属电容器的双镶嵌互连及其制造方法

    公开(公告)号:US07279733B2

    公开(公告)日:2007-10-09

    申请号:US10799292

    申请日:2004-03-12

    IPC分类号: H01L27/108 H01L29/94

    摘要: Provided are a dual damascene interconnection with a metal-insulator-metal (MIM) capacitor and a method of fabricating the same. In this structure, an MIM capacitor is formed on a via-level IMD. After the via-level IMD is formed, while an alignment key used for patterning the MIM capacitor is being formed, a via hole is formed to connect a lower electrode of the MIM capacitor and an interconnection disposed under the via-level IMD. Also, an upper electrode of the MIM capacitor is directly connected to an upper metal interconnection during a dual damascene process.

    摘要翻译: 提供了一种与金属 - 绝缘体 - 金属(MIM)电容器的双镶嵌互连及其制造方法。 在该结构中,在通孔级IMD上形成MIM电容器。 在形成通孔级IMD之后,当形成MIM电容器图形化的对准键时,形成通孔,以连接MIM电容器的下电极和配置在通孔级IMD下的互连。 此外,在双镶嵌工艺期间,MIM电容器的上电极直接连接到上金属互连。

    Dual damascene interconnection with metal-insulator-metal capacitor and method of fabricating
    8.
    发明授权
    Dual damascene interconnection with metal-insulator-metal capacitor and method of fabricating 失效
    金属 - 绝缘体 - 金属电容器的双镶嵌互连和制造方法

    公开(公告)号:US07399700B2

    公开(公告)日:2008-07-15

    申请号:US11897417

    申请日:2007-08-30

    IPC分类号: H01L21/4763

    摘要: Provided are a dual damascene interconnection with a metal-insulator-metal (MIM) capacitor and a method of fabricating the same. In this structure, an MIM capacitor is formed on a via-level IMD. After the via-level IMD is formed, while an alignment key used for patterning the MIM capacitor is being formed, a via hole is formed to connect a lower electrode of the MIM capacitor and an interconnection disposed under the via-level IMD. Also, an upper electrode of the MIM capacitor is directly connected to an upper metal interconnection during a dual damascene process.

    摘要翻译: 提供了一种与金属 - 绝缘体 - 金属(MIM)电容器的双镶嵌互连及其制造方法。 在该结构中,在通孔级IMD上形成MIM电容器。 在形成通孔级IMD之后,当形成MIM电容器图形化的对准键时,形成通孔,以连接MIM电容器的下电极和配置在通孔级IMD下的互连。 此外,在双镶嵌工艺期间,MIM电容器的上电极直接连接到上金属互连。