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公开(公告)号:US20060272561A1
公开(公告)日:2006-12-07
申请号:US11445346
申请日:2006-06-02
申请人: Kyu-Baik Chang , Tai-Kyung Kim , Jae-Hyun Han , Won-Young Chung , Hyung-Kyu Kim
发明人: Kyu-Baik Chang , Tai-Kyung Kim , Jae-Hyun Han , Won-Young Chung , Hyung-Kyu Kim
CPC分类号: H01L21/68735 , H01L21/68721
摘要: A deposition apparatus may include a deposition-preventing member for preventing deposition of process gas on a portion of substrate removeably arranged inside a processing chamber. The deposition-preventing member may include a fixing member for fixing the deposition preventing member to a fixed body of the processing chamber, a blocking member for blocking the to-be-blocked portion of the substrate to be processed, and a guiding member for guiding fluid and particles out from the processing chamber, the guiding member may include a guiding surface that prevents a vortex from forming on the deposition-preventing member when fluid and particles are flowing out of the processing chamber.
摘要翻译: 沉积设备可以包括用于防止处理气体沉积在可移除地布置在处理室内的基板的一部分上的防沉积构件。 防沉积构件可以包括用于将防沉积构件固定到处理室的固定体的固定构件,用于阻挡待处理基板的待封闭部分的阻挡构件和用于引导 流体和颗粒从处理室排出,引导构件可以包括引导表面,当引导流体和颗粒流出处理室时,引导表面防止在防沉积构件上形成涡流。
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公开(公告)号:US20070087529A1
公开(公告)日:2007-04-19
申请号:US11580352
申请日:2006-10-13
申请人: Won-Young Chung , Tai-Kyung Kim , Young-Kwan Park , Ui-Hui Kwon , Kyu-Baik Chang
发明人: Won-Young Chung , Tai-Kyung Kim , Young-Kwan Park , Ui-Hui Kwon , Kyu-Baik Chang
CPC分类号: H01L21/76838
摘要: Disclosed is a simulation method for determining wafer warpage. This method includes dividing layers and evaluating a composition ratio of materials composing the layers. The method mathematically transforms a semiconductor device, which is constructed as a complicated structure with various materials, into a simplified, mathematically equivalent stacked structure comprising a plurality of unit layer, and utilizes values of mechanical characteristics, which are obtained from the transformed layer structure, for estimating wafer warpage. As a result, it is possible to complete an operation of wafer warpage simulation using information about pattern density of the semiconductor device.
摘要翻译: 公开了一种用于确定晶片翘曲的模拟方法。 该方法包括分层和评估构成层的材料的组成比。 该方法将构成为具有各种材料的复杂结构的半导体器件数学地变换为包括多个单位层的简化的,数学上等效的堆叠结构,并利用从变换层结构获得的机械特性值, 用于估计晶片翘曲。 结果,可以使用关于半导体器件的图案密度的信息来完成晶片翘曲模拟的操作。
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公开(公告)号:US09798849B2
公开(公告)日:2017-10-24
申请号:US14688440
申请日:2015-04-16
申请人: Jae-Pil Shin , Chang-Woo Kang , Jong-Won Kim , Ho-Joon Lee , Kyu-Baik Chang , Won-Young Chung
发明人: Jae-Pil Shin , Chang-Woo Kang , Jong-Won Kim , Ho-Joon Lee , Kyu-Baik Chang , Won-Young Chung
CPC分类号: G06F17/5081 , G06F17/5009
摘要: A method of detecting stress of an integrated circuit including first and second patterns formed from different materials may comprise: determining one or more stress detection points of the first pattern; dividing a region including a first stress detection point of the one or more stress detection points into a plurality of divided regions; calculating areas of the second pattern at the divided regions; and/or detecting a stress level applied to the first stress detection point of the first pattern by the second pattern based on the areas of the second pattern at the divided regions.
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公开(公告)号:US20050174861A1
公开(公告)日:2005-08-11
申请号:US11028202
申请日:2005-01-04
申请人: Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
发明人: Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
IPC分类号: H01L27/115 , G11C29/00 , H01L27/10 , H01L27/24 , H01L45/00
CPC分类号: H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.
摘要翻译: 在形成相变存储器件的方法中,可变电阻部件可以形成为具有接触区域的半导体衬底,并且第一电极可以形成为接触可变电阻部件的第一部分并被电连接 到接触区域。 第二电极可以形成为接触可变电阻部件的第二部分。
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公开(公告)号:US20070114435A1
公开(公告)日:2007-05-24
申请号:US11544595
申请日:2006-10-10
申请人: Ui-Hui Kwon , Tai-Kyung Kim , Gyeong-Su Keum , Won-Young Chung , Kwang-Ho Cha
发明人: Ui-Hui Kwon , Tai-Kyung Kim , Gyeong-Su Keum , Won-Young Chung , Kwang-Ho Cha
IPC分类号: H01T23/00
CPC分类号: H01T23/00 , H01J27/08 , H01J37/08 , H01J2237/31701
摘要: A filament member configured to discharge thermions may be employed in an ion source of an ion implantation apparatus. A filament member may include an anode disposed around a central portion of the filament member, a cathode disposed around a periphery of the filament and/or enclosing the anode, and at least one conductive path disposed between the anode and the cathode to discharge the thermions.
摘要翻译: 构造成排出热量的细丝构件可以用于离子注入装置的离子源。 长丝构件可以包括围绕灯丝构件的中心部分设置的阳极,围绕灯丝的外围设置和/或包围阳极的阴极以及设置在阳极和阴极之间的至少一个导电路径, 。
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公开(公告)号:US07910398B2
公开(公告)日:2011-03-22
申请号:US12320869
申请日:2009-02-06
申请人: Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
发明人: Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
IPC分类号: H01L21/06
CPC分类号: H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.
摘要翻译: 在形成相变存储器件的方法中,可变电阻部件可以形成为具有接触区域的半导体衬底,并且第一电极可以形成为接触可变电阻部件的第一部分并被电连接 到接触区域。 第二电极可以形成为接触可变电阻部件的第二部分。
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公开(公告)号:US07652264B2
公开(公告)日:2010-01-26
申请号:US11544595
申请日:2006-10-10
申请人: Ui-Hui Kwon , Tai-Kyung Kim , Gyeong-Su Keum , Won-Young Chung , Kwang-Ho Cha
发明人: Ui-Hui Kwon , Tai-Kyung Kim , Gyeong-Su Keum , Won-Young Chung , Kwang-Ho Cha
IPC分类号: H01T23/00
CPC分类号: H01T23/00 , H01J27/08 , H01J37/08 , H01J2237/31701
摘要: A filament member configured to discharge thermions may be employed in an ion source of an ion implantation apparatus. A filament member may include an anode disposed around a central portion of the filament member, a cathode disposed around a periphery of the filament and/or enclosing the anode, and at least one conductive path disposed between the anode and the cathode to discharge the thermions.
摘要翻译: 构造成排出热量的细丝构件可以用于离子注入装置的离子源。 长丝构件可以包括围绕灯丝构件的中心部分设置的阳极,围绕灯丝的外围设置和/或包围阳极的阴极以及设置在阳极和阴极之间的至少一个导电路径, 。
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公开(公告)号:US20090176329A1
公开(公告)日:2009-07-09
申请号:US12320869
申请日:2009-02-06
申请人: Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
发明人: Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
IPC分类号: H01L21/06
CPC分类号: H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.
摘要翻译: 在形成相变存储器件的方法中,可变电阻部件可以形成为具有接触区域的半导体衬底,并且第一电极可以形成为接触可变电阻部件的第一部分并被电连接 到接触区域。 第二电极可以形成为接触可变电阻部件的第二部分。
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公开(公告)号:US07514704B2
公开(公告)日:2009-04-07
申请号:US11028202
申请日:2005-01-04
申请人: Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
发明人: Young-Tae Kim , Young-Nam Hwang , Tai-Kyung Kim , Won-Young Chung , Keun-Ho Lee
CPC分类号: H01L45/06 , H01L27/2436 , H01L45/1226 , H01L45/1233 , H01L45/126 , H01L45/1293 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1675
摘要: In a method of forming a phase-change memory device, a variable resistance member may be formed on a s semiconductor substrate having a contact region, and a first electrode may be formed to contact a first portion of the variable resistance member and to be electrically connected to the contact region. A second electrode may be formed so as to contact a second portion of the variable resistance member.
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公开(公告)号:US20120011880A1
公开(公告)日:2012-01-19
申请号:US13143605
申请日:2010-01-07
申请人: Won-Young Chung , Jae-Hyun Soh , Deok-Hyun Youn , Cheol-Hwan Kim , Ju-Hyun Kim
发明人: Won-Young Chung , Jae-Hyun Soh , Deok-Hyun Youn , Cheol-Hwan Kim , Ju-Hyun Kim
CPC分类号: F25C1/00 , F25C5/22 , F25C2301/002 , F25C2600/04 , F25D23/126 , F25D29/00 , F25D2323/023 , F25D2700/12
摘要: The present invention relates to a cooling apparatus including a non-freezing apparatus which can be installed in a refrigerating chamber or a refrigerating chamber door and stably store food in a non-frozen state. A cooling apparatus includes a freezing chamber, a refrigerating chamber, a freezing chamber door, a refrigerating chamber door, and a non-freezing apparatus installed in the refrigerating chamber or the refrigerating chamber door and storing food in a non-frozen state. In the non-freezing apparatus, since a lower space is cooled by the cool air introduced from the freezing chamber and an upper space is cooled by the atmosphere of the refrigerating chamber, it is possible to reduce a heating value of a heater which is operated to maintain the temperature of the upper space to be higher than that of the lower space.
摘要翻译: 本发明涉及一种冷却装置,包括可以安装在冷藏室或冷藏室门中的非冷冻装置,并将食品稳定地储存在非冷冻状态。 冷却装置包括冷冻室,冷藏室,冷冻室门,冷藏室门和安装在冷藏室或冷藏室门中的非冷冻装置,并且将食品储存在非冷冻状态。 在非冷冻装置中,由于通过从冷冻室引入的冷空气冷却下部空间,并且上部空间被冷藏室的气氛冷却,因此能够降低被操作的加热器的发热量 以保持上部空间的温度高于较低空间的温度。
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