公开(公告)号：US06930948B2

公开(公告)日：2005-08-16

申请号：US10621165

申请日：2003-07-15

申请人： Kyu-Chan Lee ,  Sang-Jae Rhee ,  Jung-Yong Choi ,  Jong-Hyun Choi ,  Jong-Sik Na ,  Jae-Hoon Kim

发明人： Kyu-Chan Lee ,  Sang-Jae Rhee ,  Jung-Yong Choi ,  Jong-Hyun Choi ,  Jong-Sik Na ,  Jae-Hoon Kim

IPC分类号： G11C5/14 ,  G11C11/00

CPC分类号： G11C5/147

摘要： An external high/low voltage compatible semiconductor memory device includes an internal voltage pad, an internal voltage generation circuit, and an internal voltage control signal generation circuit. The internal voltage pad connects a low external voltage with an internal voltage, and the internal voltage generation circuit generates an internal voltage in response to an internal voltage control signal and a high external voltage. The internal voltage control signal generation circuit generates an internal voltage control signal according to an high or low external voltage. Thus, a database of the semiconductor memory device can be managed without classifying the database into databases for the high voltage and databases for the low voltage because of the internal voltage control signal. In addition, the internal voltage level is stable because charges provided to the internal voltage are regulated according to a voltage level of the external voltage.

摘要翻译： 外部高/低电压兼容半导体存储器件包括内部电压焊盘，内部电压产生电路和内部电压控制信号产生电路。 内部电压焊盘将低外部电压与内部电压连接，并且内部电压产生电路响应于内部电压控制信号和高外部电压而产生内部电压。 内部电压控制信号发生电路根据高或低的外部电压产生内部电压控制信号。 因此，由于内部电压控制信号，可以管理半导体存储器件的数据库，而不将数据库分类为用于低电压的高电压数据库和数据库。 此外，内部电压电平稳定，因为根据外部电压的电压电平调节提供给内部电压的电荷。