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1.
公开(公告)号:US08472762B2
公开(公告)日:2013-06-25
申请号:US12981760
申请日:2010-12-30
申请人: Kyu-Dong Jung , Ki-Hun Jeong , Dong-Min Keum
发明人: Kyu-Dong Jung , Ki-Hun Jeong , Dong-Min Keum
摘要: Provided is an optical sensor and an optical sensor fabricating method. The optical sensor includes: a substrate; and an ommatidia located on or inside the substrate, the ommatidia comprising a microlens which receives light, an optical waveguide which transfers the light received through the microlens, and a cone structure comprising a first end connected to the microlens and a second end connected to the optical waveguide, the cone structure having a diameter or a width decreasing in a direction from the first end to the second end.
摘要翻译: 提供了一种光学传感器和光学传感器制造方法。 光学传感器包括:基板; 以及位于所述基底上或内部的小眼像素,所述眼病包括接收光的微透镜,传送通过所述微透镜接收的光的光波导,以及包括连接到所述微透镜的第一端的锥形结构,以及连接到所述微透镜的第二端 光波导,锥形结构具有在从第一端到第二端的方向上减小的直径或宽度。
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公开(公告)号:US09570621B2
公开(公告)日:2017-02-14
申请号:US12977853
申请日:2010-12-23
申请人: Ki-Hun Jeong , Do-Hyun Kim , Dong-Hoon Lee , Kap-Soo Yoon , Jae-Ho Choi , Sung-Hoon Yang , Pil-Sang Yun , Seung-Mi Seo
发明人: Ki-Hun Jeong , Do-Hyun Kim , Dong-Hoon Lee , Kap-Soo Yoon , Jae-Ho Choi , Sung-Hoon Yang , Pil-Sang Yun , Seung-Mi Seo
IPC分类号: H01L29/10 , H01L29/12 , H01L29/786
CPC分类号: H01L29/7869 , H01L29/78606 , H01L29/78633
摘要: The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT includes an oxide semiconductor layer; a protective layer overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode across the channel region; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.
摘要翻译: 本发明公开了一种薄膜晶体管(TFT),TFT的制造方法以及使用该TFT的显示基板,其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化 的氧化物半导体。 TFT包括氧化物半导体层; 与所述氧化物半导体层的沟道区域重叠的保护层; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 漏电极,与所述氧化物半导体层的第二侧接触,并跨过所述沟道区面对所述源电极; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。
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公开(公告)号:US08976305B2
公开(公告)日:2015-03-10
申请号:US13351820
申请日:2012-01-17
申请人: Sungryul Kim , Daecheol Kim , Woongkwon Kim , Ki-Hun Jeong , Sungjin Mun , Jung suk Bang , Byeonghoon Cho , Kun-Wook Han
发明人: Sungryul Kim , Daecheol Kim , Woongkwon Kim , Ki-Hun Jeong , Sungjin Mun , Jung suk Bang , Byeonghoon Cho , Kun-Wook Han
IPC分类号: G02F1/1368 , G02F1/1333 , G02F1/1362 , G06F3/042 , G02F1/1337 , G02F1/1343
CPC分类号: G02F1/13338 , G02F1/133707 , G02F1/136209 , G02F1/13624 , G02F2001/134345 , G02F2201/083 , G06F3/0421 , G06F2203/04103
摘要: A display apparatus includes a light generating part and a display panel. The display panel includes a first substrate, and a second substrate facing the first substrate. The second substrate includes a plurality of pixel units including a sensor sensing the light generated from the light generating part and reflected from an object disposed on the display panel, and a pixel. The display panel further includes a light blocking member which is positioned at a position corresponding to an area in which the sensor is disposed and prevents the light generated from the light generating part from being directly incident to the sensor. The light blocking member is disposed on the first substrate.
摘要翻译: 显示装置包括发光部和显示面板。 显示面板包括第一基板和面向第一基板的第二基板。 第二基板包括多个像素单元,其包括传感器,其感测从发光部分产生的并且从设置在显示面板上的物体反射的光,以及像素。 显示面板还包括遮光部件,该遮光部件位于与设置有传感器的区域对应的位置,防止从光产生部生成的光直接入射到传感器。 遮光构件设置在第一基板上。
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公开(公告)号:US08717336B2
公开(公告)日:2014-05-06
申请号:US13346849
申请日:2012-01-10
申请人: Ki-Hun Jeong , Woongkwon Kim , Kun-Wook Han , Daecheol Kim , Sungryul Kim , Sungjin Mun , Jung suk Bang , Byeonghoon Cho
发明人: Ki-Hun Jeong , Woongkwon Kim , Kun-Wook Han , Daecheol Kim , Sungryul Kim , Sungjin Mun , Jung suk Bang , Byeonghoon Cho
IPC分类号: G09G5/00
CPC分类号: G06F3/0412 , G06F3/042 , G09G3/3696 , G09G2360/141 , G09G2360/144
摘要: A light sensing panel includes sensors arranged in rows and columns, where the sensors receive a first bias voltage and a second bias voltage and output light sensing signals based on light incident thereto; first and second bias lines which transfers the first and second bias voltages, respectively, to the sensors, where each of the first and second bias lines includes a main line and sub lines diverged from the main line and arranged in a second direction corresponding to the columns;, where the sub lines of the first and second bias lines are alternately arranged, and where when two adjacent sub lines are shorted, the shorted sub line of the first bias line is separated from the main line of the first bias line.
摘要翻译: 光感测面板包括以行和列布置的传感器,其中传感器接收第一偏置电压和第二偏置电压,并且基于入射到其上的光输出光感测信号; 分别将第一偏置电压和第二偏置电压传送到传感器的第一和第二偏置线,其中第一和第二偏置线中的每一个包括主线和从主线发散的子线,并且沿对应于 列,其中第一和第二偏置线的子线交替布置,并且当两个相邻子线短路时,第一偏置线的短路子线与第一偏置线的主线分离。
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公开(公告)号:US08698167B2
公开(公告)日:2014-04-15
申请号:US13226980
申请日:2011-09-07
申请人: Woongkwon Kim , Daecheol Kim , Ki-Hun Jeong , SungHoon Yang , Yunjong Yeo , Sang Youn Han , Sungryul Kim , Suk Won Jung , Byeonghoon Cho , HeeJoon Kim , Hong-Kee Chin , Kyung-Sook Jeon , Seungmi Seo , Kyung-ho Park , Jung suk Bang , Kun-Wook Han , Mi-Seon Seo
发明人: Woongkwon Kim , Daecheol Kim , Ki-Hun Jeong , SungHoon Yang , Yunjong Yeo , Sang Youn Han , Sungryul Kim , Suk Won Jung , Byeonghoon Cho , HeeJoon Kim , Hong-Kee Chin , Kyung-Sook Jeon , Seungmi Seo , Kyung-ho Park , Jung suk Bang , Kun-Wook Han , Mi-Seon Seo
IPC分类号: H01L27/15
CPC分类号: H01L27/14632 , G02F1/13338 , G02F2001/13312 , G06F3/0412 , G06F3/042 , H01L27/14621
摘要: In a display apparatus, a light sensor of a display includes a light sensing layer, a source electrode, a drain electrode, an insulating layer, and a gate electrode to sense light from an external source. The light sensing layer is disposed on the substrate to sense light, and the source and drain electrodes are disposed on the light sensing layer and are covered by the insulating layer. The gate electrode is disposed on the insulating layer. An edge of the gate electrode is disposed on the light sensing layer at least in an area where the light sensing layer is overlapped with the source and drain electrodes.
摘要翻译: 在显示装置中,显示器的光传感器包括感光层,源电极,漏电极,绝缘层和栅电极,用于检测来自外部源的光。 光感测层设置在基板上以感测光,并且源极和漏极设置在光感测层上并被绝缘层覆盖。 栅电极设置在绝缘层上。 栅电极的边缘至少在光感测层与源电极和漏电极重叠的区域中设置在感光层上。
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公开(公告)号:US08581253B2
公开(公告)日:2013-11-12
申请号:US12904507
申请日:2010-10-14
申请人: Jung-Suk Bang , Byeong-Hoon Cho , Sung-Hoon Yang , Suk-Won Jung , Ki-Hun Jeong
发明人: Jung-Suk Bang , Byeong-Hoon Cho , Sung-Hoon Yang , Suk-Won Jung , Ki-Hun Jeong
CPC分类号: G02F1/136209 , G02F2001/13312 , G02F2203/11
摘要: A display substrate includes a first light blocking pattern formed on a base substrate, a first switching element, a second light blocking pattern formed on the base substrate, and a first sensing element. The first light blocking pattern is configured to block visible light and transmit infrared light. The first switching element includes a first semiconductor pattern, a first source electrode, a first drain electrode, and a first gate electrode. The second light blocking pattern is configured to block the visible light and transmit the infrared light. The first sensing element is configured to detect the infrared light, and includes a second semiconductor pattern, a second source electrode, a second drain electrode, and a second gate electrode.
摘要翻译: 显示基板包括形成在基底基板上的第一遮光图案,第一开关元件,形成在基底基板上的第二遮光图案和第一感测元件。 第一遮光图案被配置为阻挡可见光并透射红外光。 第一开关元件包括第一半导体图案,第一源极电极,第一漏极电极和第一栅极电极。 第二遮光图案被配置为阻挡可见光并透射红外光。 第一感测元件被配置为检测红外光,并且包括第二半导体图案,第二源电极,第二漏电极和第二栅电极。
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公开(公告)号:US08390776B2
公开(公告)日:2013-03-05
申请号:US13450643
申请日:2012-04-19
申请人: Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
发明人: Ki-Hun Jeong , Seung-Hwan Shim , Joo-Han Kim , Hong-Kee Chin
IPC分类号: G02F1/13
CPC分类号: H01L27/1214 , H01L27/1288 , H01L29/4908
摘要: A method of manufacturing a thin film transistor array substrate includes: forming a gate pattern on a substrate; forming a first gate insulating film and a second gate insulating film on the substrate; forming a source/drain pattern and a semiconductor pattern on the substrate; forming a passivation film on the substrate; forming a photo-resist pattern on the passivation film; patterning the passivation film using the photo-resist pattern to form a passivation film pattern, the patterning of the passivation film including over-etching the passivation film to form an open region in the passivation film; forming a transparent electrode film on the substrate; removing the photo-resist pattern and a portion of the transparent electrode film on the photo-resist pattern; and forming a pixel electrode on the first gate insulating layer.
摘要翻译: 制造薄膜晶体管阵列基板的方法包括:在基板上形成栅极图案; 在所述基板上形成第一栅极绝缘膜和第二栅极绝缘膜; 在衬底上形成源极/漏极图案和半导体图案; 在衬底上形成钝化膜; 在钝化膜上形成光刻胶图案; 使用光刻胶图形图案化钝化膜以形成钝化膜图案,钝化膜的图案化包括过蚀刻钝化膜以在钝化膜中形成开放区域; 在基板上形成透明电极膜; 在所述光刻胶图案上除去所述光刻胶图案和所述透明电极膜的一部分; 以及在所述第一栅极绝缘层上形成像素电极。
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8.
公开(公告)号:US08384871B2
公开(公告)日:2013-02-26
申请号:US12686012
申请日:2010-01-12
申请人: Seung-Hwan Shim , Gung-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi
发明人: Seung-Hwan Shim , Gung-Rae Jo , Sung-Hoon Yang , Kap-Soo Yoon , Ki-Hun Jeong , Jae-Ho Choi
IPC分类号: G02F1/1333 , G02F1/1345 , G02F1/1339
CPC分类号: G02F1/1345 , G02F2001/133519
摘要: In a liquid crystal display (LCD) apparatus and a method for manufacturing the LCD apparatus, the LCD apparatus includes first and second substrates, and a liquid crystal layer disposed between the first and second substrates. The first substrate includes a transparent insulating substrate, a conductive layer formed over an entire surface of the transparent insulating substrate, and a transparent conductive electrode formed on the conductive layer.
摘要翻译: 在液晶显示(LCD)装置和LCD装置的制造方法中,LCD装置包括第一和第二基板以及设置在第一和第二基板之间的液晶层。 第一基板包括透明绝缘基板,形成在透明绝缘基板的整个表面上的导电层和形成在导电层上的透明导电电极。
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公开(公告)号:US20120200511A1
公开(公告)日:2012-08-09
申请号:US13165913
申请日:2011-06-22
申请人: Hyungguel Kim , Woongkwon Kim , HeeJoon Kim , Daecheol Kim , Ki-Hun Jeong , Kyung-ho Park
发明人: Hyungguel Kim , Woongkwon Kim , HeeJoon Kim , Daecheol Kim , Ki-Hun Jeong , Kyung-ho Park
IPC分类号: G06F3/041
CPC分类号: G06F3/0412 , G06F3/0421
摘要: A display device includes a first substrate with pixels for displaying an image and a first wire transmitting a common voltage received from an outside source. A second substrate includes a second wire transmitting the common voltage received from the outside source and a common electrode receiving the common voltage from the first wire and the second wire. Conductive spacers are formed between the first wire and the common electrode in correspondence with a part of an area where the first wire is formed, and electrically connect the first wire to the common electrode.
摘要翻译: 显示装置包括具有用于显示图像的像素的第一基板和传输从外部源接收的公共电压的第一布线。 第二基板包括传输从外部源接收的公共电压的第二线和从第一线和第二线接收公共电压的公共电极。 对应于形成第一线的区域的一部分,并且将第一线与公共电极电连接,在第一线和公共电极之间形成导电间隔物。
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公开(公告)号:US08237878B2
公开(公告)日:2012-08-07
申请号:US12536693
申请日:2009-08-06
申请人: Seung-Hwan Shim , Kap-Soo Yoon , Sung-Hoon Yang , Ki-Hun Jeong
发明人: Seung-Hwan Shim , Kap-Soo Yoon , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号: G02F1/1343
CPC分类号: G02F1/1368 , G02F1/136213 , H01L27/1225 , H01L27/124 , H01L27/1255
摘要: A liquid crystal display (LCD) includes a gate wiring, a first insulating substrate, an oxide active layer pattern, a data wiring, a floating electrode, and an upper gate electrode. The gate wiring includes a gate line formed on the first insulating substrate and a lower gate electrode extending from the gate line. The oxide active layer pattern is formed on the gate wiring. The data wiring includes a data line intersecting the gate line. The floating electrode generates a coupling capacitance by overlapping the gate wiring. The upper gate electrode is capacitively coupled to the lower gate electrode.
摘要翻译: 液晶显示器(LCD)包括栅极布线,第一绝缘基板,氧化物活性层图案,数据布线,浮动电极和上部栅电极。 栅极布线包括形成在第一绝缘基板上的栅极线和从栅极线延伸的下部栅电极。 氧化物有源层图案形成在栅极布线上。 数据线包括与栅极线相交的数据线。 浮动电极通过重叠栅极布线而产生耦合电容。 上栅电极电容耦合到下栅电极。
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