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    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME
    2.
    发明申请
    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 有权
    高效发光二极管及其制造方法

    公开(公告)号：US20110241045A1

    公开(公告)日：2011-10-06

    申请号：US13018557

    申请日：2011-02-01

    申请人： Kyung Hee YE ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

    发明人： Kyung Hee YE ,  Chang Youn KIM ,  Jin Cheol SHIN ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

    IPC分类号： H01L33/46

    CPC分类号： H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

    摘要： A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

    摘要翻译： 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。

    HIGH EFFICIENCY LIGHT EMITTING DIODE
    3.
    发明申请
    HIGH EFFICIENCY LIGHT EMITTING DIODE 有权

    公开(公告)号：US20110227114A1

    公开(公告)日：2011-09-22

    申请号：US13077371

    申请日：2011-03-31

    申请人： Chang Youn KIM ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

    发明人： Chang Youn KIM ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

    IPC分类号： H01L33/00

    CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/382

    摘要： Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.

    LIGHT EMITTING DIODE
    4.
    发明申请
    LIGHT EMITTING DIODE 有权
    发光二极管

    公开(公告)号：US20110316026A1

    公开(公告)日：2011-12-29

    申请号：US13099127

    申请日：2011-05-02

    申请人： Chang Youn KIM ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM ,  Hwa Mok KIM

    发明人： Chang Youn KIM ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM ,  Hwa Mok KIM

    IPC分类号： H01L33/10

    CPC分类号： H01L33/10 ,  H01L33/025 ,  H01L2933/0091

    摘要： An exemplary embodiment of the present invention relates to a light emitting diode (LED) including a substrate, a first nitride semiconductor layer arranged on the substrate, an active layer arranged on the first nitride semiconductor layer, a second nitride semiconductor layer arranged on the active layer, a third nitride semiconductor layer disposed between the first nitride semiconductor layer or between the second nitride semiconductor layer and the active layer, the third nitride semiconductor layer comprising a plurality of scatter elements within the third nitride semiconductor layer, and a distributed Bragg reflector (DBR) comprising a multi-layered structure, the substrate being arranged between the DBR and the third nitride semiconductor layer.

    摘要翻译： 本发明的示例性实施例涉及一种发光二极管（LED），其包括衬底，布置在衬底上的第一氮化物半导体层，布置在第一氮化物半导体层上的有源层，布置在有源层上的第二氮化物半导体层 层，设置在第一氮化物半导体层之间或第二氮化物半导体层和有源层之间的第三氮化物半导体层，在第三氮化物半导体层内包括多个散射元件的第三氮化物半导体层和分布式布拉格反射器 DBR），所述基板布置在所述DBR和所述第三氮化物半导体层之间。

    HIGH EFFICIENCY LIGHT EMITTING DIODE
    5.
    发明申请
    HIGH EFFICIENCY LIGHT EMITTING DIODE 有权
    高效发光二极管

    公开(公告)号：US20110227109A1

    公开(公告)日：2011-09-22

    申请号：US12986774

    申请日：2011-01-07

    申请人： Chang Youn KIM ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

    发明人： Chang Youn KIM ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hong Chol LIM

    IPC分类号： H01L33/46 ,  H01L33/38

    CPC分类号： H01L33/22 ,  H01L33/20 ,  H01L33/382

    摘要： Provided is a high-efficiency light emitting diode (LED) that includes: a support substrate; a semiconductor stack positioned on the support substrate, the semiconductor stack including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; a first electrode positioned between the support substrate and the semiconductor stack and in ohmic contact with the semiconductor stack; a first bonding pad positioned on a portion of the first electrode that is exposed outside of the semiconductor stack; and a second electrode positioned on the semiconductor stack. Protrusions are formed on exposed surfaces of the semiconductor stack. In addition, the second electrode may be positioned between the first electrode and the support substrate and contacted with the n-type compound semiconductor layer through openings of the semiconductor stack.

    摘要翻译： 提供了一种高效率发光二极管（LED），其包括：支撑基板; 位于所述支撑基板上的半导体堆叠，所述半导体堆叠包括p型化合物半导体层，有源层和n型化合物半导体层; 位于所述支撑衬底和所述半导体堆叠之间并与所述半导体堆叠欧姆接触的第一电极; 位于所述第一电极的暴露于所述半导体叠层外部的部分上的第一焊盘; 以及位于半导体堆叠上的第二电极。 突起形成在半导体堆叠的暴露表面上。 此外，第二电极可以位于第一电极和支撑衬底之间，并且通过半导体叠层的开口与n型化合物半导体层接触。

    METHOD OF FABRICATING LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LASER LIFT-OFF APPARATUS HAVING HEATER
    7.
    发明申请
    METHOD OF FABRICATING LIGHT EMITTING DIODE USING LASER LIFT-OFF TECHNIQUE AND LASER LIFT-OFF APPARATUS HAVING HEATER 有权
    使用激光提升技术制造发光二极管的方法和具有加热器的激光提升装置

    公开(公告)号：US20120160817A1

    公开(公告)日：2012-06-28

    申请号：US13410884

    申请日：2012-03-02

    申请人： Chang Youn KIM ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hwa Mok KIM

    发明人： Chang Youn KIM ,  Joon Hee LEE ,  Jong Kyun YOU ,  Hwa Mok KIM

    IPC分类号： B23K26/38

    CPC分类号： H01L33/0079

    摘要： An approach is provided for fabricating a light emitting diode using a laser lift-off apparatus. The approach includes growing an epitaxial layer including a first conductive-type compound semiconductor layer, an active layer and a second conductive-type compound semiconductor layer on a first substrate, bonding a second substrate, having a different thermal expansion coefficient from that of the first substrate, to the epitaxial layers at a first temperature of the first substrate higher than a room temperature, and separating the first substrate from the epitaxial layer by irradiating a laser beam through the first substrate at a second temperature of the first substrate higher than the room temperature but not more than the first temperature.

    摘要翻译： 提供了一种使用激光剥离装置制造发光二极管的方法。 该方法包括在第一衬底上生长包括第一导电型化合物半导体层，有源层和第二导电型化合物半导体层的外延层，将具有不同于第一衬底的热膨胀系数不同的第二衬底 衬底，在第一衬底的高于室温的第一温度下到外延层，并且通过在第一衬底的高于室的第二温度下照射穿过第一衬底的激光束将第一衬底与外延层分离 温度不高于第一温度。

    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    9.
    发明申请
    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
    高效发光二极管及其制造方法

    公开(公告)号：US20120119243A1

    公开(公告)日：2012-05-17

    申请号：US13109669

    申请日：2011-05-17

    申请人： Chang Yeon KIM ,  Da Hye KIM ,  Hong Chul LIM ,  Joon Hee LEE ,  Jong Kyun YOU

    发明人： Chang Yeon KIM ,  Da Hye KIM ,  Hong Chul LIM ,  Joon Hee LEE ,  Jong Kyun YOU

    IPC分类号： H01L33/22

    CPC分类号： H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2224/73265

    摘要： Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

    摘要翻译： 本发明的示例性实施例涉及一种高效率发光二极管（LED）。 根据示例性实施例的LED包括衬底，布置在衬底上的半导体堆叠，其中半导体堆叠具有p型半导体层，有源层和n型半导体层，插入在衬底之间的第一金属层 半导体堆叠，与半导体堆叠欧姆接触的第一金属层，布置在半导体堆叠上的第一电极焊盘，从第一电极焊盘延伸的电极延伸部，其中电极延伸部具有接触n型 半导体层，插入在所述基板和所述半导体堆叠之间的第一绝缘层，其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域，以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。