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    Semiconductor fabrication apparatuses to perform semiconductor etching and deposition processes and methods of forming semiconductor device using the same
    3.
    发明授权
    Semiconductor fabrication apparatuses to perform semiconductor etching and deposition processes and methods of forming semiconductor device using the same 有权
    用于执行半导体蚀刻和沉积工艺的半导体制造装置以及使用其形成半导体器件的方法

    公开(公告)号：US08197637B2

    公开(公告)日：2012-06-12

    申请号：US12033266

    申请日：2008-02-19

    申请人： Kyung-Woo Lee ,  Jin-Sung Kim ,  Joo-Byoung Yoon ,  Yeong-Cheol Lee ,  Sang-Jun Park ,  Hee-Kyeong Jeon

    发明人： Kyung-Woo Lee ,  Jin-Sung Kim ,  Joo-Byoung Yoon ,  Yeong-Cheol Lee ,  Sang-Jun Park ,  Hee-Kyeong Jeon

    IPC分类号： H01L21/33

    CPC分类号： H01L21/02087 ,  H01J37/32009 ,  H01J37/32587 ,  H01L21/02057 ,  H01L21/0209

    摘要： A semiconductor fabrication apparatus and a method of fabricating a semiconductor device using the same performs semiconductor etching and deposition processes at an edge of a semiconductor substrate after disposing the semiconductor substrate at a predetermined place in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus has lower, middle and upper electrodes sequentially stacked. The semiconductor substrate is disposed on the middle electrode. Semiconductor etching and deposition processes are performed on the semiconductor substrate in the semiconductor fabrication apparatus. The semiconductor fabrication apparatus forms electrical fields along an edge of the middle electrode during performance of the semiconductor etching and deposition processes.

    摘要翻译： 半导体制造装置和使用该半导体制造装置的半导体装置的制造方法在将半导体基板设置在半导体制造装置中的预定位置之后，在半导体基板的边缘进行半导体蚀刻和沉积处理。 半导体制造装置具有顺序堆叠的下部，中间和上部电极。 半导体衬底设置在中间电极上。 在半导体制造装置中的半导体衬底上进行半导体蚀刻和沉积处理。 半导体制造装置在半导体蚀刻和沉积工艺的执行期间沿着中间电极的边缘形成电场。