公开(公告)号：US10763394B2

公开(公告)日：2020-09-01

申请号：US15749730

申请日：2016-07-29

Applicant: LG INNOTEK CO., LTD.

Inventor： Yong Gyeong Lee ,  Min Sung Kim ,  Su Ik Park ,  Youn Joon Sung ,  Kwang Yong Choi

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/08

Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.

公开(公告)号：US10263154B2

公开(公告)日：2019-04-16

申请号：US15749069

申请日：2016-08-25

Applicant: LG INNOTEK CO., LTD.

Inventor： Su Ik Park ,  Min Sung Kim ,  Youn Joon Sung ,  Yong Gyeong Lee ,  Kwang Yong Choi

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/12 ,  H01L33/26 ,  H01L33/36 ,  H01L33/06 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/44 ,  H01L33/48 ,  H01L33/62 ,  H01L33/40 ,  H01L33/42

Abstract: An embodiment relates to a light-emitting device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses passing through the second conductive semiconductor layer and active layer and disposed on a part of an area of the first conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer inside the plurality of first recesses; a conductive support substrate which is electrically connected to the first electrode; a second electrode which is electrically connected to the second conductive semiconductor layer; and an insulating layer which is disposed between the conductive support substrate and second conductive semiconductor layer, wherein a second recess passes through the first conductive semiconductor layer, second conductive semiconductor layer and active layer and is disposed on a part of an area of the insulating layer.

公开(公告)号：US11018279B2

公开(公告)日：2021-05-25

申请号：US16444528

申请日：2019-06-18

Applicant: LG INNOTEK CO., LTD.

Inventor： Yong Gyeong Lee ,  Min Sung Kim ,  Su Ik Park ,  Youn Joon Sung ,  Kwang Yong Choi

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/08

Abstract: A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the plurality of p-type conductors in the first direction.

公开(公告)号：US10998466B2

公开(公告)日：2021-05-04

申请号：US16083710

申请日：2017-03-08

Applicant: LG INNOTEK CO., LTD.

Inventor： Kwang Yong Choi ,  Min Sung Kim ,  Su Ik Park ,  Youn Joon Sung ,  Yong Gyeong Lee

IPC: H01L33/24 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L33/22

Abstract: An embodiment relates to a light emitting device comprise a second electrode which includes indium tin oxide (ITO), an ohmic characteristic between a second semiconductor layer and the second electrode is improved and a driving voltage is also improved. An embodiment relates to a light emitting device comprise a capping layer that can overlap the second semiconductor layer with the second electrode interposed therebetween and include a material of which a difference in thermal expansion coefficient with the second semiconductor layer is 3 or less. Therefore, since the capping layer is electrically connected to the second electrode, delamination and lifting of an interface between the second electrode and the second semiconductor layer is prevented, and reliability of the light emitting device is improved.

公开(公告)号：US10790413B2

公开(公告)日：2020-09-29

申请号：US16068600

申请日：2016-12-28

Applicant: LG INNOTEK CO., LTD.

Inventor： Youn Joon Sung ,  Yong Gyeong Lee ,  Kwang Yong Choi

IPC: H01L33/06 ,  H01L33/32 ,  H01L33/20 ,  H01L33/36 ,  H01L33/58 ,  G02F1/13357 ,  H01L33/44

Abstract: One embodiment comprises: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises a first area where a partial area of the first conductive semiconductor layer is exposed, and comprises an inclination part which is disposed between the upper surface of the first area and the upper surface of the second conductive semiconductor layer, wherein the inclination part comprises a first edge making contact with the upper surface of the second conductive semiconductor layer, and a second edge making contact with the upper surface of the first area of the first conductive semiconductor layer, wherein the ratio of a first length to a second length is 1:0.87 to 1:4.26, wherein the first length is a length in a first direction between the first edge and the second edge, and the second length is a length in a second direction between the first edge and the second edge, wherein the first direction and the second direction are directions that are perpendicular to each other.

公开(公告)号：US10236417B2

公开(公告)日：2019-03-19

申请号：US15563737

申请日：2016-03-31

Applicant: LG INNOTEK CO., LTD.

Inventor： Woo Sik Lim ,  Min Sung Kim ,  Eun Woo Ro ,  Su Ik Park ,  Youn Joon Sung ,  Kwang Yong Choi

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/36 ,  H01L33/44 ,  H01L33/62 ,  H01L33/64 ,  F21V8/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/60

Abstract: An embodiment relates to a light-emitting element that easily dissipates heat through a pad and has a uniform heat distribution, the light-emitting element including a light-emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode that is formed on one side of the light-emitting structure and includes a plurality of contact parts electrically connected with the first semiconductor layer; a second electrode formed on the one side of the light-emitting structure and electrically connected with the second semiconductor layer; a first pad connected with the first electrode; and a second pad spaced apart from the first pad and connected with the second electrode, wherein the plurality of contact parts are arranged on the first and second pads.