公开(公告)号：US10763394B2

公开(公告)日：2020-09-01

申请号：US15749730

申请日：2016-07-29

Applicant: LG INNOTEK CO., LTD.

Inventor： Yong Gyeong Lee ,  Min Sung Kim ,  Su Ik Park ,  Youn Joon Sung ,  Kwang Yong Choi

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/08

Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.

公开(公告)号：US10263154B2

公开(公告)日：2019-04-16

申请号：US15749069

申请日：2016-08-25

Applicant: LG INNOTEK CO., LTD.

Inventor： Su Ik Park ,  Min Sung Kim ,  Youn Joon Sung ,  Yong Gyeong Lee ,  Kwang Yong Choi

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/12 ,  H01L33/26 ,  H01L33/36 ,  H01L33/06 ,  H01L33/22 ,  H01L33/30 ,  H01L33/32 ,  H01L33/44 ,  H01L33/48 ,  H01L33/62 ,  H01L33/40 ,  H01L33/42

Abstract: An embodiment relates to a light-emitting device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses passing through the second conductive semiconductor layer and active layer and disposed on a part of an area of the first conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer inside the plurality of first recesses; a conductive support substrate which is electrically connected to the first electrode; a second electrode which is electrically connected to the second conductive semiconductor layer; and an insulating layer which is disposed between the conductive support substrate and second conductive semiconductor layer, wherein a second recess passes through the first conductive semiconductor layer, second conductive semiconductor layer and active layer and is disposed on a part of an area of the insulating layer.

公开(公告)号：US10236417B2

公开(公告)日：2019-03-19

申请号：US15563737

申请日：2016-03-31

Applicant: LG INNOTEK CO., LTD.

Inventor： Woo Sik Lim ,  Min Sung Kim ,  Eun Woo Ro ,  Su Ik Park ,  Youn Joon Sung ,  Kwang Yong Choi

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/36 ,  H01L33/44 ,  H01L33/62 ,  H01L33/64 ,  F21V8/00 ,  H01L33/06 ,  H01L33/32 ,  H01L33/60

Abstract: An embodiment relates to a light-emitting element that easily dissipates heat through a pad and has a uniform heat distribution, the light-emitting element including a light-emitting structure that includes a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode that is formed on one side of the light-emitting structure and includes a plurality of contact parts electrically connected with the first semiconductor layer; a second electrode formed on the one side of the light-emitting structure and electrically connected with the second semiconductor layer; a first pad connected with the first electrode; and a second pad spaced apart from the first pad and connected with the second electrode, wherein the plurality of contact parts are arranged on the first and second pads.

公开(公告)号：US11018279B2

公开(公告)日：2021-05-25

申请号：US16444528

申请日：2019-06-18

Applicant: LG INNOTEK CO., LTD.

Inventor： Yong Gyeong Lee ,  Min Sung Kim ,  Su Ik Park ,  Youn Joon Sung ,  Kwang Yong Choi

IPC: H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/08

Abstract: A light emitting device can include a sapphire substrate; a first conductivity type semiconductor layer disposed on the sapphire substrate; an active layer disposed on the first conductivity type semiconductor layer; a plurality of p-type conductors disposed on the active layer, and separated from each other; a first pad disposed on the first conductivity type semiconductor layer; and a second pad disposed on the plurality of p-type conductors, in which the plurality of p-type conductors are arranged in a first direction, the second pad is spaced apart from the first pad in a second direction, the second direction is perpendicular to the first direction, each of the plurality of p-type conductors has a first width in the first direction and a second width in the second direction, the first width being less than the second width, the plurality of p-type conductors are evenly spaced apart by a first distance in the first direction, and the first distance being less than the first width of each of the plurality of p-type conductors in the first direction.

公开(公告)号：US10971651B2

公开(公告)日：2021-04-06

申请号：US16479065

申请日：2018-01-19

Applicant: LG INNOTEK CO., LTD.

Inventor： Youn Joon Sung ,  Min Sung Kim

IPC: H01L33/26 ,  H01L33/08 ,  H01L33/14 ,  H01L33/36

Abstract: Disclosed is in the embodiment is a semiconductor device comprising: a first conductive semiconductor layer; a second conductive semiconductor layer; an active layer disposed between the second conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the first conductive semiconductor layer includes a first sub semiconductor layer, a third sub semiconductor layer and a second sub semiconductor layer disposed between the first sub semiconductor layer and the third sub semiconductor layer, wherein proportion of aluminum in the first sub semiconductor layer and the third sub semiconductor layer is larger than an proportion of aluminum in the active layer, and an proportion of aluminum in the second sub semiconductor layer is smaller than the proportion of aluminum in the first sub semiconductor layer and the third sub semiconductor layer, wherein the second conductive semiconductor layer includes a current injection layer of which proportion of aluminum decreases as a distance from the active layer increases, the first electrode is disposed on the second sub semiconductor layer, the second electrode is disposed on the current injection layer, and the ratio of the average value of the proportion of aluminum in the second sub semiconductor layer to the average value of the proportion of aluminum in the current injection layer is 1:0.12 to 1:1.6.

公开(公告)号：US10998466B2

公开(公告)日：2021-05-04

申请号：US16083710

申请日：2017-03-08

Applicant: LG INNOTEK CO., LTD.

Inventor： Kwang Yong Choi ,  Min Sung Kim ,  Su Ik Park ,  Youn Joon Sung ,  Yong Gyeong Lee

IPC: H01L33/24 ,  H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L33/22

Abstract: An embodiment relates to a light emitting device comprise a second electrode which includes indium tin oxide (ITO), an ohmic characteristic between a second semiconductor layer and the second electrode is improved and a driving voltage is also improved. An embodiment relates to a light emitting device comprise a capping layer that can overlap the second semiconductor layer with the second electrode interposed therebetween and include a material of which a difference in thermal expansion coefficient with the second semiconductor layer is 3 or less. Therefore, since the capping layer is electrically connected to the second electrode, delamination and lifting of an interface between the second electrode and the second semiconductor layer is prevented, and reliability of the light emitting device is improved.

公开(公告)号：US10734552B2

公开(公告)日：2020-08-04

申请号：US16310340

申请日：2017-06-20

Applicant: LG INNOTEK CO., LTD.

Inventor： Su Ik Park ,  Youn Joon Sung ,  Min Sung Kim ,  Yong Gyeong Lee ,  Eun Dk Lee

IPC: H01L33/38 ,  H01L33/48 ,  H01L33/32 ,  H01L33/40 ,  H01L33/22

Abstract: An embodiment provides a semiconductor device including a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and a plurality of recesses passing through the second conductive semiconductor layer and the active layer and extending to a portion of the first conductive semiconductor layer; a plurality of first electrodes disposed inside the plurality of recesses and electrically connected with the first conductive semiconductor layer; and a second electrode electrically connected with the second conductive semiconductor layer, wherein a ratio of a first area of where the plurality of first electrodes are in contact with the first conductive semiconductor layer and a second area of where the second electrode is in contact with the second conductive semiconductor layer (first area:second area) ranges from 1:3 to 1:10.