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公开(公告)号：US09773948B2
公开(公告)日：2017-09-26
申请号：US14755933
申请日：2015-06-30
Applicant: LG INNOTEK CO., LTD.
Inventor： Se Yeon Jung , Yong Gyeong Lee
CPC classification number: H01L33/38 , H01L33/405 , H01L33/42 , H01L2224/48091 , H01L2224/49107 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: Embodiments provide a light emitting device including a substrate, a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, disposed on the substrate, a first electrode disposed on the first conductivity-type semiconductor layer, and a second electrode disposed on the second conductivity-type semiconductor layer. The first electrode includes an ohmic contact layer disposed on the first conductivity-type semiconductor layer and formed of a transparent conductive oxide and a reflective layer disposed on the ohmic contact layer, and the thickness of the ohmic contact layer is 1 nm or more and less than 60 nm.
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公开(公告)号：US10790413B2
公开(公告)日：2020-09-29
申请号：US16068600
申请日：2016-12-28
Applicant: LG INNOTEK CO., LTD.
Inventor： Youn Joon Sung , Yong Gyeong Lee , Kwang Yong Choi
Abstract: One embodiment comprises: a substrate; a first conductive semiconductor layer disposed on the substrate; a second conductive semiconductor layer disposed on the first conductive semiconductor layer; and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, wherein the first conductive semiconductor layer comprises a first area where a partial area of the first conductive semiconductor layer is exposed, and comprises an inclination part which is disposed between the upper surface of the first area and the upper surface of the second conductive semiconductor layer, wherein the inclination part comprises a first edge making contact with the upper surface of the second conductive semiconductor layer, and a second edge making contact with the upper surface of the first area of the first conductive semiconductor layer, wherein the ratio of a first length to a second length is 1:0.87 to 1:4.26, wherein the first length is a length in a first direction between the first edge and the second edge, and the second length is a length in a second direction between the first edge and the second edge, wherein the first direction and the second direction are directions that are perpendicular to each other.
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公开(公告)号：US09437781B2
公开(公告)日：2016-09-06
申请号：US14927112
申请日：2015-10-29
Applicant: LG INNOTEK CO., LTD.
Inventor： Se Yeon Jung , Yong Gyeong Lee
CPC classification number: H01L33/382 , H01L33/06 , H01L33/145 , H01L33/20 , H01L33/42 , H01L33/46 , H01L33/62 , H01L2224/48091 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
Abstract: Disclosed is a light emitting device which includes a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer, a first current blocking layer, a second current blocking layer arranged on the light emitting structure to be separated from each other, a light-transmitting conductive layer arranged on the first current blocking layer, the second current blocking layer and the light emitting structure, first electrode and second electrode electrically coupled to the first conductive semiconductor layer and the second conductive semiconductor layer, respectively, a through hole formed through the light-transmitting conductive layer, the second conductive semiconductor layer and the active layer to a portion of the first conductive semiconductor layer, and a through electrode arranged inside the through hole. Here, the through electrode does not overlap the first current blocking layer in a vertical direction.
Abstract translation: 公开了一种发光器件，其包括发光结构，该发光结构包括第一导电半导体层，有源层和第二导电半导体层，第一电流阻挡层，布置在待分离的发光结构上的第二电流阻挡层 彼此分别设置在第一电流阻挡层，第二电流阻挡层和发光结构上的透光导电层，分别电耦合到第一导电半导体层和第二导电半导体层的第一电极和第二电极 ，通过透光导电层形成的通孔，第二导电半导体层和有源层到第一导电半导体层的一部分，以及布置在通孔内的通孔。 这里，贯通电极在垂直方向上不与第一电流阻挡层重叠。
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公开(公告)号：US20160093667A1
公开(公告)日：2016-03-31
申请号：US14962083
申请日：2015-12-08
Applicant: LG INNOTEK CO., LTD.
Inventor： Byung Yeon CHOI , Hee Young Beom , Yong Gyeong Lee , Ji Hwan Lee , Hyun Seoung Ju , Gi Seok Hong
CPC classification number: H01L27/156 , H01L33/06 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/40 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.
Abstract translation: 发光结构包括具有不同导电类型的下半导体层和上半导体层，以及设置在下半导体层和上半导体层之间的有源层。 发光结构设置在基板上。 设置在上半导体层上的第一电极层包括彼此重叠的第一粘合层和第一粘合层。 在第一粘合剂层和第一粘合层之间不设置反射层。
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5.发明授权公开(公告)号：US10763394B2
公开(公告)日：2020-09-01
申请号：US15749730
申请日：2016-07-29
Applicant: LG INNOTEK CO., LTD.
Inventor： Yong Gyeong Lee , Min Sung Kim , Su Ik Park , Youn Joon Sung , Kwang Yong Choi
Abstract: An embodiment provides a light emitting element comprising: a light emitting structure including a first conductive semiconductor layer, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer; a plurality of conductor layers selectively arranged on the second conductive semiconductor layer; and a reflective electrode disposed on the conductor layers and the second conductive semiconductor layer.
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Patent Agency Ranking
公开(公告)号：US10263154B2
公开(公告)日：2019-04-16
申请号：US15749069
申请日：2016-08-25
Applicant: LG INNOTEK CO., LTD.
Inventor： Su Ik Park , Min Sung Kim , Youn Joon Sung , Yong Gyeong Lee , Kwang Yong Choi
IPC: H01L33/00 , H01L33/38 , H01L33/12 , H01L33/26 , H01L33/36 , H01L33/06 , H01L33/22 , H01L33/30 , H01L33/32 , H01L33/44 , H01L33/48 , H01L33/62 , H01L33/40 , H01L33/42
Abstract: An embodiment relates to a light-emitting device comprising: a light-emitting structure which comprises a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer, and comprises a plurality of first recesses passing through the second conductive semiconductor layer and active layer and disposed on a part of an area of the first conductive semiconductor layer; a first electrode which is electrically connected to the first conductive semiconductor layer inside the plurality of first recesses; a conductive support substrate which is electrically connected to the first electrode; a second electrode which is electrically connected to the second conductive semiconductor layer; and an insulating layer which is disposed between the conductive support substrate and second conductive semiconductor layer, wherein a second recess passes through the first conductive semiconductor layer, second conductive semiconductor layer and active layer and is disposed on a part of an area of the insulating layer.
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公开(公告)号：US09735199B2
公开(公告)日：2017-08-15
申请号：US15092682
申请日：2016-04-07
Applicant: LG INNOTEK CO., LTD.
Inventor： Byung Yeon Choi , Myeong Soo Kim , Hee Young Beom , Yong Gyeong Lee , Hyun Seoung Ju , Gi Seok Hong
CPC classification number: H01L27/156 , H01L27/15 , H01L33/10 , H01L33/145 , H01L33/385 , H01L33/42 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.
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公开(公告)号：US20160225816A1
公开(公告)日：2016-08-04
申请号：US15092682
申请日：2016-04-07
Applicant: LG INNOTEK CO., LTD.
Inventor： Byung Yeon Choi , Myeong Soo Kim , Hee Young Beom , Yong Gyeong Lee , Hyun Seoung Ju , Gi Seok Hong
CPC classification number: H01L27/156 , H01L27/15 , H01L33/10 , H01L33/145 , H01L33/385 , H01L33/42 , H01L33/62 , H01L2924/0002 , H01L2924/00
Abstract: A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell.
Abstract translation: 发光装置包括基板，发光单元，每个发光单元包括包括下半导体层和上半导体层的发光结构，上电极和下电极，导电互连层，电连接 发光单元中的第一个和第二个发光单元的上电极以及从上电极和上半导体层之间延伸设置的电流阻挡层，其中每个发光单元还包括导电层 布置成将第二发光单元的上电极电连接到第二发光单元的上半导体层。
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公开(公告)号：US10998694B2
公开(公告)日：2021-05-04
申请号：US16608051
申请日：2018-05-18
Applicant: LG INNOTEK CO., LTD.
Inventor： Su Ik Park , Keon Hwa Lee , Yong Gyeong Lee
Abstract: A laser diode according to an embodiment may include a substrate, a plurality of light emitting structures disposed on the substrate and including a first reflective layer and a second reflective layer, a first electrode electrically connected with the first reflective layer of the light emitting structure, a second electrode electrically connected with the second reflective layer of the light emitting structure, a first insulating layer disposed on the first electrode, a first bonding pad electrically connected with the first electrode and disposed on the substrate, and a second bonding pad electrically connected with the second electrode and disposed on the substrate.
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公开(公告)号：US10998466B2
公开(公告)日：2021-05-04
申请号：US16083710
申请日：2017-03-08
Applicant: LG INNOTEK CO., LTD.
Inventor： Kwang Yong Choi , Min Sung Kim , Su Ik Park , Youn Joon Sung , Yong Gyeong Lee
Abstract: An embodiment relates to a light emitting device comprise a second electrode which includes indium tin oxide (ITO), an ohmic characteristic between a second semiconductor layer and the second electrode is improved and a driving voltage is also improved. An embodiment relates to a light emitting device comprise a capping layer that can overlap the second semiconductor layer with the second electrode interposed therebetween and include a material of which a difference in thermal expansion coefficient with the second semiconductor layer is 3 or less. Therefore, since the capping layer is electrically connected to the second electrode, delamination and lifting of an interface between the second electrode and the second semiconductor layer is prevented, and reliability of the light emitting device is improved.
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