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公开(公告)号：US11716805B2
公开(公告)日：2023-08-01
申请号：US17558332
申请日：2021-12-21
发明人： Maolin Long , Yuhou Wang , Ricky Marsh , Alex Paterson
CPC分类号： H05H1/46 , H01J37/32174 , H01J37/32183 , H03F3/2173 , H05H1/466 , H05H1/4652 , H05H2242/10 , H05H2242/24
摘要： A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
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公开(公告)号：US11692732B2
公开(公告)日：2023-07-04
申请号：US16909949
申请日：2020-06-23
CPC分类号： F24F13/00 , H01J37/321 , H01J37/32522 , H01J37/32651 , H01J37/32963
摘要： A chamber is provided. The chamber includes a Faraday shield positioned above a substrate support of the chamber. A dielectric window is disposed over the Faraday shield, and the dielectric window has a center opening. A hub having an internal plenum for passing a flow of fluid received from an input conduit and removing the flow of fluid from an output conduit is further provided. The hub has sidewalls and a center cavity inside of the sidewalls for an optical probe, and the internal plenum is disposed in the sidewalls. The hub has an interface surface that is in physical contact with a back side of the Faraday shield. The physical contact provides for a thermal couple to the Faraday shield at a center region around said center opening, and an outer surface of the sidewalls of the hub are disposed within the center opening of the dielectric window.
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公开(公告)号：US20200335305A1
公开(公告)日：2020-10-22
申请号：US16888613
申请日：2018-11-28
发明人： Maolin Long , Yuhou Wang , Ying Wu , Alex Paterson
摘要： A system and method for generating a radio frequency (RF) waveform are described. The method includes defining a train of on-off pulses separated by an off state having no on-off pulses. The method further includes applying a multi-level pulse waveform that adjusts a magnitude of each of the on-off pulses to generate an RF waveform. The method includes sending the RF waveform to an electrode.
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公开(公告)号：US10784083B2
公开(公告)日：2020-09-22
申请号：US16162769
申请日：2018-10-17
发明人： Maolin Long , John Drewery , Alex Paterson
摘要： A voltage sensor for a substrate processing system is provided. The voltage sensor includes a terminal, a first channel, and a second channel. The terminal connects to a pickup device of a substrate support in the substrate processing system. The first channel is configured to detect, at the pickup device, first radio frequency voltages in a first voltage range. The first channel includes a first voltage divider. The first voltage divider is connected to the terminal and is configured to output a first reduced voltage representative of a detected one of the first radio frequency voltages. The second channel is configured to detect, at the pickup device, second radio frequency voltages in a second voltage range. The second channel includes a second voltage divider. The second voltage divider is connected to the terminal and is configured to output a second reduced voltage representative of a detected one of the second radio frequency voltages. The second voltage range is different than the first voltage range.
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公开(公告)号：US10755896B2
公开(公告)日：2020-08-25
申请号：US16779478
申请日：2020-01-31
发明人： Juline Shoeb , Alex Paterson , Ying Wu
IPC分类号： H01J37/32
摘要： Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The RF signal is applied to a substrate support via a match. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. In addition, a direct current (DC) parameter is applied to the substrate support or another RF signal is applied to an upper electrode. The parameter and the frequency of the RF signal applied to the substrate support are simultaneously pulsed with the DC parameter or the RF signal applied to the upper electrode to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.
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公开(公告)号：US20200253034A1
公开(公告)日：2020-08-06
申请号：US16853516
申请日：2020-04-20
发明人： Maolin Long , Yuhou Wang , Ricky Marsh , Alex Paterson
摘要： A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.
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公开(公告)号：US20200168438A1
公开(公告)日：2020-05-28
申请号：US16779478
申请日：2020-01-31
发明人： Juline Shoeb , Alex Paterson , Ying Wu
IPC分类号： H01J37/32
摘要： Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The RF signal is applied to a substrate support via a match. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. In addition, a direct current (DC) parameter is applied to the substrate support or another RF signal is applied to an upper electrode. The parameter and the frequency of the RF signal applied to the substrate support are simultaneously pulsed with the DC parameter or the RF signal applied to the upper electrode to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.
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公开(公告)号：US10585347B2
公开(公告)日：2020-03-10
申请号：US16224651
申请日：2018-12-18
发明人： Saravanapriyan Sriraman , Richard Wise , Harmeet Singh , Alex Paterson , Andrew D. Bailey, III , Vahid Vahedi , Richard A. Gottscho
摘要： Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation. The methods may further include estimating a quantity characteristic of an edge placement error (EPE) of the feature by comparing the one or more quantities characteristic of the IFPF to those in a look-up table (LUT, and/or through application of a multivariate model trained on the LUT, e.g., constructed through machine learning methods (MLM)) which associates values of the quantity characteristic of EPE with values of the one or more quantities characteristics of the IFPF. Thereafter, the initial design layout may be modified based on at the determined quantity characteristic of EPE.
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公开(公告)号：US10573494B2
公开(公告)日：2020-02-25
申请号：US16275008
申请日：2019-02-13
发明人： Juline Shoeb , Alex Paterson , Ying Wu
摘要： Systems and methods for multi-level pulsing of a parameter and multi-level pulsing of a frequency of a radio frequency (RF) signal are described. The parameter is pulsed from a low level to a high level while the frequency is pulsed from a low level to a high level. The parameter and the frequency are simultaneously pulsed to increase a rate of processing a wafer, to increase mask selectivity, and to reduce angular spread of ions within a plasma chamber.
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公开(公告)号：US20190250501A1
公开(公告)日：2019-08-15
申请号：US16224651
申请日：2018-12-18
发明人： Saravanapriyan Sriraman , Richard Wise , Harmeet Singh , Alex Paterson , Andrew D. Bailey, III , Vahid Vahedi , Richard A. Gottscho
摘要： Disclosed are methods of generating a proximity-corrected design layout for photoresist to be used in an etch operation. The methods may include identifying a feature in an initial design layout, and estimating one or more quantities characteristic of an in-feature plasma flux (IFPF) within the feature during the etch operation. The methods may further include estimating a quantity characteristic of an edge placement error (EPE) of the feature by comparing the one or more quantities characteristic of the IFPF to those in a look-up table (LUT, and/or through application of a multivariate model trained on the LUT, e.g., constructed through machine learning methods (MLM)) which associates values of the quantity characteristic of EPE with values of the one or more quantities characteristics of the IFPF. Thereafter, the initial design layout may be modified based on at the determined quantity characteristic of EPE.
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