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    Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition
    2.
    发明授权
    Methods and apparatus for forming smooth and conformal cobalt film by atomic layer deposition 有权

    公开(公告)号：US10242879B2

    公开(公告)日：2019-03-26

    申请号：US15492976

    申请日：2017-04-20

    申请人： Lam Research Corporation

    发明人： Jeong-Seok Na ,  Raashina Humayun

    IPC分类号： H01L21/44 ,  H01L21/285 ,  H01L21/768 ,  C23C16/52 ,  C23C16/455

    摘要： Provided herein are atomic layer deposition (ALD) methods of depositing cobalt in a feature. The methods involve two-step surface treatments during an ALD cycle, with one step involving the reaction of a co-reactant gas with an adsorbed cobalt precursor and the other step involving a growth-inhibiting reactant gas on the cobalt surface. The growth-inhibiting reactant gas significantly lowers cobalt growth rate, producing a highly conformal cobalt film. The described ALD processes enable improved controllability in film nucleation, step coverage, and morphology by the separate surface treatment and low process temperature. The methods are applicable to a variety of feature fill applications including the fabrication of metal gate/contact fill in front end of line (FEOL) processes as well as via/line fill in back end of line (BEOL) processes.

    Feature fill with multi-stage nucleation inhibition
    3.
    发明授权
    Feature fill with multi-stage nucleation inhibition 有权

    公开(公告)号：US10170320B2

    公开(公告)日：2019-01-01

    申请号：US15156129

    申请日：2016-05-16

    申请人： Lam Research Corporation

    发明人： Deqi Wang ,  Anand Chandrashekar ,  Raashina Humayun ,  Michal Danek

    IPC分类号： H01L21/285 ,  H01L21/768 ,  C23C16/02 ,  C23C16/04 ,  C23C16/06 ,  C23C16/505 ,  C23C16/56 ,  H01L27/11556 ,  H01L27/11582 ,  H01L27/108

    摘要： Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. The methods include performing multi-stage inhibition treatments including intervals between stages. One or more of plasma source power, substrate bias power, or treatment gas flow may be reduced or turned off during an interval. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up/inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate and wordline fill, and 3-D integration using through-silicon vias.

    METHODS AND APPARATUS FOR FORMING SMOOTH AND CONFORMAL COBALT FILM BY ATOMIC LAYER DEPOSITION
    4.
    发明申请
    METHODS AND APPARATUS FOR FORMING SMOOTH AND CONFORMAL COBALT FILM BY ATOMIC LAYER DEPOSITION 审中-公开

    公开(公告)号：US20180308701A1

    公开(公告)日：2018-10-25

    申请号：US15492976

    申请日：2017-04-20

    申请人： Lam Research Corporation

    发明人： Jeong-Seok Na ,  Raashina Humayun

    IPC分类号： H01L21/285 ,  H01L21/768 ,  C23C16/52 ,  C23C16/455

    CPC分类号： H01L21/28556 ,  C23C16/45544 ,  C23C16/52 ,  H01L21/76877

    摘要： Provided herein are atomic layer deposition (ALD) methods of depositing cobalt in a feature. The methods involve two-step surface treatments during an ALD cycle, with one step involving the reaction of a co-reactant gas with an adsorbed cobalt precursor and the other step involving a growth-inhibiting reactant gas on the cobalt surface. The growth-inhibiting reactant gas significantly lowers cobalt growth rate, producing a highly conformal cobalt film. The described ALD processes enable improved controllability in film nucleation, step coverage, and morphology by the separate surface treatment and low process temperature. The methods are applicable to a variety of feature fill applications including the fabrication of metal gate/contact fill in front end of line (FEOL) processes as well as via/line fill in back end of line (BEOL) processes.

    FEATURE FILL WITH NUCLEATION INHIBITION
    7.
    发明申请
    FEATURE FILL WITH NUCLEATION INHIBITION 有权

    公开(公告)号：US20220102208A1

    公开(公告)日：2022-03-31

    申请号：US17497702

    申请日：2021-10-08

    申请人： Lam Research Corporation

    发明人： Anand Chandrashekar ,  Esther Jeng ,  Raashina Humayun ,  Michal Danek ,  Juwen Gao ,  Deqi Wang

    IPC分类号： H01L21/768 ,  H01L21/285 ,  H01L21/321 ,  H01L21/324 ,  H01L27/11524 ,  H01L27/11556 ,  C23C16/04 ,  C23C16/50 ,  C23C16/00

    摘要： Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. Pre-inhibition and post-inhibition treatments are used to modulate the inhibition effect, facilitating feature fill using inhibition across a wide process window. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up/inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate and wordline fill, and 3-D integration using through-silicon vias.

    Void free tungsten fill in different sized features
    10.
    发明授权
    Void free tungsten fill in different sized features 有权
    无空隙钨填充不同大小的特征

    公开(公告)号：US09548228B2

    公开(公告)日：2017-01-17

    申请号：US14341646

    申请日：2014-07-25

    申请人： Lam Research Corporation

    发明人： Anand Chandrashekar ,  Raashina Humayun

    IPC分类号： H01L21/285 ,  H01L21/67 ,  H01L21/768 ,  H01L21/3213

    CPC分类号： H01L21/67207 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/32136 ,  H01L21/76865 ,  H01L21/76877

    摘要： Methods of depositing tungsten in different sized features on a substrate are provided herein. The methods involve depositing a first bulk layer of tungsten in the features, etching the deposited tungsten, depositing a second bulk tungsten, which is interrupted to treat the tungsten after the smaller features are completely filled, and resuming deposition of the second bulk layer after treatment to deposit smaller, smoother tungsten grains into the large features. The methods also involve depositing tungsten in multiple cycles of dep-etch-dep, where each cycle targets a group of similarly sized features using etch chemistry specific for that group, and depositing in groups from smallest sized features to the largest sized features. Deposition using methods described herein produce smaller, smoother grains with void-free fill for a wide range of sized features in a substrate.

    摘要翻译： 本文提供了在基板上沉积不同大小特征的钨的方法。 所述方法包括在特征中沉积钨的第一体积层，蚀刻沉积的钨，沉积第二体钨，其在较小特征完全填充之后中断以处理钨，以及在处理后恢复第二体积层的沉积 将更小，更平滑的钨粒沉积到大的特征中。 这些方法还涉及在多次循环的去蚀刻沉积中沉积钨，其中每个循环使用对于该组具有特异性的蚀刻化学特性并且以最小尺寸的特征成组至最大尺寸的特征，以一组相似大小的特征为目标。 使用本文所述的方法的沉积产生更小，更平滑的颗粒，其具有无孔填充物，用于基底中宽范围的尺寸特征。