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23 条记录 (耗时 0.022 秒)

    Wafer carrier
    1.
    发明授权
    Wafer carrier 失效
    晶圆载体

    公开(公告)号：US06544033B1

    公开(公告)日：2003-04-08

    申请号：US09658362

    申请日：2000-09-08

    申请人： Lance A. Scudder ,  Lori Washington ,  Lori A. Callaghan ,  Bradley M. Curelop

    发明人： Lance A. Scudder ,  Lori Washington ,  Lori A. Callaghan ,  Bradley M. Curelop

    IPC分类号： F27D1900

    CPC分类号： H01L21/68757 ,  H01L21/67346 ,  H01L21/67748

    摘要： Provided herein is a wafer carrier comprising a disk and a pocket, wherein the pocket is centered in the disk and holds a wafer. Also provided is a method of processing or testing a wafer for a semiconductor device, comprising the steps of placing the wafer in the wafer carrier disclosed herein; loading the wafer carrier in a loadlock chamber; and transferring the wafer carrier from the loadlock chamber to a process chamber for processing or testing.

    摘要翻译： 本文提供了包括盘和袋的晶片载体，其中所述袋在盘中居中并保持晶片。 还提供了一种用于半导体器件的晶片的处理或测试的方法，包括以下步骤：将晶片放置在本文公开的晶片载体中; 将所述晶片载体装载在负载锁定室中; 并将晶片载体从负载锁定室转移到用于处理或测试的处理室。

    Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films
    2.
    发明授权
    Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films 失效
    位错特异性介质掩模沉积和横向外延过度生长以减少氮化物膜的位错密度

    公开(公告)号：US07459380B2

    公开(公告)日：2008-12-02

    申请号：US11418642

    申请日：2006-05-05

    申请人： David Bour ,  Sandeep Nijhawa ,  Jacob Smith ,  Lori Washington

    发明人： David Bour ,  Sandeep Nijhawa ,  Jacob Smith ,  Lori Washington

    IPC分类号： H01L21/20 ,  H01L21/36

    CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

    摘要： In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.

    摘要翻译： 根据本发明，提供了用于降低氮化物外延膜的位错密度的改进方法。 具体地，提供了原位蚀刻处理以优先蚀刻氮化物外延层的位错，以防止通过氮化物外延层的位错穿透。 在蚀刻位错之后，进行外延层过度生长。 在某些实施例中，位错的蚀刻与外延层的生长同时发生。 在其它实施例中，在外延层过度生长之前，在形成于位错处的蚀刻坑内沉积电介质掩模。

    Radial temperature control for lattice-mismatched epitaxy
    3.
    发明申请
    Radial temperature control for lattice-mismatched epitaxy 失效
    晶格失配外延的径向温度控制

    公开(公告)号：US20070259535A1

    公开(公告)日：2007-11-08

    申请号：US11418634

    申请日：2006-05-05

    申请人： Lori Washington ,  Sandeep Nijhawan ,  David Carlson

    发明人： Lori Washington ,  Sandeep Nijhawan ,  David Carlson

    IPC分类号： H01L21/31

    CPC分类号： C30B25/12 ,  C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Methods are disclosed of fabricating a compound nitride semiconductor structure. A substrate is disposed over a susceptor in a processing chamber, with the susceptor in thermal communication with the substrate. A group-III precursor and a nitrogen precursor are flowed into the processing chamber. The susceptor is heated with a nonuniform temperature profile to heat the substrate. A nitride layer is deposited over the heated substrate with a thermal chemical vapor deposition process within the processing chamber using the group-III precursor and the nitrogen precursor.

    摘要翻译： 公开了制造复合氮化物半导体结构的方法。 基板设置在处理室中的基座上方，基座与基板热连通。 III族前体和氮前体流入处理室。 感受器以不均匀的温度分布被加热以加热基底。 使用III族前体和氮前体，在处理室内利用热化学气相沉积工艺在加热的衬底上沉积氮化物层。

    Radial temperature control for lattice-mismatched epitaxy
    6.
    发明授权
    Radial temperature control for lattice-mismatched epitaxy 失效
    晶格失配外延的径向温度控制

    公开(公告)号：US07534714B2

    公开(公告)日：2009-05-19

    申请号：US11418634

    申请日：2006-05-05

    申请人： Lori Washington ,  Sandeep Nijhawan ,  David Carlson

    发明人： Lori Washington ,  Sandeep Nijhawan ,  David Carlson

    IPC分类号： H01L21/28 ,  H01L21/3205

    CPC分类号： C30B25/12 ,  C30B25/02 ,  C30B25/10 ,  C30B29/403 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/007

    摘要： Methods are disclosed of fabricating a compound nitride semiconductor structure. A substrate is disposed over a susceptor in a processing chamber, with the susceptor in thermal communication with the substrate. A group-III precursor and a nitrogen precursor are flowed into the processing chamber. The susceptor is heated with a nonuniform temperature profile to heat the substrate. A nitride layer is deposited over the heated substrate with a thermal chemical vapor deposition process within the processing chamber using the group-III precursor and the nitrogen precursor.

    摘要翻译： 公开了制造复合氮化物半导体结构的方法。 基板设置在处理室中的基座上方，基座与基板热连通。 III族前体和氮前体流入处理室。 感受器以不均匀的温度分布被加热以加热基底。 使用III族前体和氮前体，在处理室内利用热化学气相沉积工艺在加热的衬底上沉积氮化物层。

    Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films
    7.
    发明申请
    Dislocation-specific dielectric mask deposition and lateral epitaxial overgrowth to reduce dislocation density of nitride films 失效
    位错特异性介质掩模沉积和横向外延过度生长以减少氮化物膜的位错密度

    公开(公告)号：US20070259464A1

    公开(公告)日：2007-11-08

    申请号：US11418642

    申请日：2006-05-05

    申请人： David Bour ,  Sandeep Nijhawa ,  Jacob Smith ,  Lori Washington

    发明人： David Bour ,  Sandeep Nijhawa ,  Jacob Smith ,  Lori Washington

    IPC分类号： H01L21/00

    CPC分类号： H01L33/007 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/0265

    摘要： In accordance with the present invention, improved methods for reducing the dislocation density of nitride epitaxial films are provided. Specifically, an in-situ etch treatment is provided to preferentially etch the dislocations of the nitride epitaxial layer to prevent threading of the dislocations through the nitride epitaxial layer. Subsequent to etching of the dislocations, an epitaxial layer overgrowth is performed. In certain embodiments, the etching of the dislocations occurs simultaneously with growth of the epitaxial layer. In other embodiments, a dielectric mask is deposited within the etch pits formed at the dislocations prior to the epitaxial layer overgrowth.

    摘要翻译： 根据本发明，提供了用于降低氮化物外延膜的位错密度的改进方法。 具体地，提供了原位蚀刻处理以优先蚀刻氮化物外延层的位错，以防止通过氮化物外延层的位错穿透。 在蚀刻位错之后，进行外延层过度生长。 在某些实施例中，位错的蚀刻与外延层的生长同时发生。 在其它实施例中，在外延层过度生长之前，在形成于位错处的蚀刻坑内沉积电介质掩模。

    MOCVD reactor with concentration-monitor feedback
    8.
    发明申请
    MOCVD reactor with concentration-monitor feedback 审中-公开
    具有浓度监测反馈的MOCVD反应器

    公开(公告)号：US20070254093A1

    公开(公告)日：2007-11-01

    申请号：US11411667

    申请日：2006-04-26

    申请人： Sandeep Nijhawan ,  Lori Washington ,  Jacob Smith ,  Garry Kwong ,  David Bour ,  David Eaglesham

    发明人： Sandeep Nijhawan ,  Lori Washington ,  Jacob Smith ,  Garry Kwong ,  David Bour ,  David Eaglesham

    IPC分类号： C23C16/52 ,  C23C16/00 ,  B05C11/00

    CPC分类号： C23C16/52 ,  C23C16/4482

    摘要： Methods and systems permit fabricating structures using liquid sources without active temperature control. A liquid or solid source of the precursor is provided in a bubbler. A carrier gas source is flowed into the source to generate a flow of precursor vapor carried by the carrier gas. A relative concentration of the precursor vapor to the carrier gas of the flow is measured. A mass flow rate of the precursor in the flow is determined from the measured relative concentration. A flow rate of the carrier gas into the source is changed to maintain the mass flow rate at a defined value or within a defined range.

    摘要翻译： 方法和系统允许使用没有主动温度控制的液体源制造结构。 将前体的液体或固体源提供在起泡器中。 载气源流入源中以产生由载气承载的前体蒸气流。 测量前体蒸汽相对于流动载气的相对浓度。 根据测量的相对浓度确定流体中前体的质量流率。 将进入源的载气的流量改变为将质量流量保持在规定值或者在规定范围内。

    Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE
    10.
    发明申请
    Parasitic particle suppression in growth of III-V nitride films using MOCVD and HVPE 失效
    使用MOCVD和HVPE在III-V族氮化物薄膜生长中的寄生颗粒抑制

    公开(公告)号：US20070259502A1

    公开(公告)日：2007-11-08

    申请号：US11429022

    申请日：2006-05-05

    申请人： David Bour ,  Jacob Smith ,  Sandeep Nijhawan ,  Lori Washington ,  David Eaglesham

    发明人： David Bour ,  Jacob Smith ,  Sandeep Nijhawan ,  Lori Washington ,  David Eaglesham

    IPC分类号： H01L21/336 ,  H01L51/40 ,  H01L21/4763

    CPC分类号： C30B25/02 ,  C23C16/303 ,  C23C16/4401 ,  C30B25/165 ,  C30B29/403 ,  C30B29/406 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02403 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262

    摘要： A method of suppressing parasitic particle formation in a metal organic chemical vapor deposition process is described. The method may include providing a substrate to a reaction chamber, and introducing an organometallic precursor, a particle suppression compound and at least a second precursor to the reaction chamber. The second precursor reacts with the organometallic precursor to form a nucleation layer on the substrate. Also, a method of suppressing parasitic particle formation during formation of a III-V nitride layer is described. The method includes introducing a group III metal containing precursor to a reaction chamber. The group III metal precursor may include a halogen. A hydrogen halide gas and a nitrogen containing gas are also introduced to the reaction chamber. The nitrogen containing gas reacts with the group III metal precursor to form the Ill-V nitride layer on the substrate.

    摘要翻译： 描述了抑制金属有机化学气相沉积工艺中的寄生颗粒形成的方法。 该方法可以包括向反应室提供底物，并将有机金属前体，颗粒抑制化合物和至少第二前体引入反应室。 第二前驱体与有机金属前驱体反应以在基底上形成成核层。 另外，描述了在形成III-V族氮化物层期间抑制寄生粒子形成的方法。 该方法包括将含III族金属的前体引入反应室。 III族金属前体可以包括卤素。 卤化氢气体和含氮气体也被引入反应室。 含氮气体与III族金属前体反应，在衬底上形成III-V族氮化物层。