公开(公告)号：US06600241B2

公开(公告)日：2003-07-29

申请号：US10226381

申请日：2002-08-23

申请人： Larry M. Tichauer ,  Steven S. McClure

发明人： Larry M. Tichauer ,  Steven S. McClure

IPC分类号： H05B3702

CPC分类号： H03K17/302 ,  H01L27/092 ,  H03K19/00338 ,  Y10T307/773

摘要： A compensation circuit and method for compensating for the threshold shift in an irradiated MOSFET. The method determines the gate threshold voltage to body voltage relationship to vary the body voltage with radiation. The compensation circuit (10) has at least one MOSFET (Q2) having the same channel type as the MOSFET being compensated (Q1). The at least one matching MOSFET (Q2) is connected to the gate of the MOSFET (Q1) being compensated. At least one MOSFET (Q3, Q4) having a channel type that is different from the channel type of the MOSFET (Q1) being compensated is connected to the gate of the matching MOSFET (Q2). The result is that the compensation circuit (10) controls a negative shift in the body voltage of the MOSFET (Q1) being compensated resulting in a higher threshold voltage.

摘要翻译： 一种用于补偿照射的MOSFET中的阈值偏移的补偿电路和方法。 该方法确定栅极阈值电压与体电压关系，以通过辐射改变体电压。 补偿电路（10）具有至少一个具有与被补偿的MOSFET相同的沟道类型的MOSFET（Q2）（Q1）。 至少一个匹配MOSFET（Q2）被连接到正被补偿的MOSFET（Q1）的栅极。 至少一个MOSFET（Q3，Q4）被连接到匹配MOSFET（Q2）的栅极，其具有与被补偿的MOSFET（Q1）的沟道类型不同的沟道类型。 结果是补偿电路（10）控制正在补偿的MOSFET（Q1）的体电压的负偏移，导致更高的阈值电压。

公开(公告)号：US06509589B1

公开(公告)日：2003-01-21

申请号：US09332599

申请日：1999-06-14

申请人： Larry M. Tichauer ,  Steven S. McClure

发明人： Larry M. Tichauer ,  Steven S. McClure

IPC分类号： H01L2980

CPC分类号： H03K17/302 ,  H01L27/092 ,  H03K19/00338 ,  Y10T307/773

摘要： A compensation circuit and method for compensating for the threshold shift in an irradiated MOSFET. The method determines the gate threshold voltage to body voltage relationship to vary the body voltage with radiation. The compensation circuit has at least one MOSFET having the same channel type as the MOSFET being compensated. The at least one matching MOSFET is connected to the gate of the MOSFET being compensated. At least one MOSFET having a channel type that is different from the channel type of the MOSFET being compensated is connected to the gate of the matching MOSFET. The result is that the compensation circuit controls a negative shift in the body voltage of the MOSFET being compensated resulting in a higher threshold voltage.

摘要翻译： 一种用于补偿照射的MOSFET中的阈值偏移的补偿电路和方法。 该方法确定栅极阈值电压与体电压关系，以通过辐射改变体电压。 补偿电路具有至少一个与补偿的MOSFET具有相同通道类型的MOSFET。 至少一个匹配的MOSFET连接到正被补偿的MOSFET的栅极。 至少有一个具有不同于被补偿的MOSFET的沟道类型的沟道类型的MOSFET连接到匹配MOSFET的栅极。 结果是补偿电路控制正被补偿的MOSFET的体电压的负偏移，导致更高的阈值电压。

公开(公告)号：US06362690B1

公开(公告)日：2002-03-26

申请号：US09552284

申请日：2000-04-19

申请人： Larry M. Tichauer

发明人： Larry M. Tichauer

IPC分类号： H02H720

CPC分类号： H04B1/0458 ,  H03F1/0261 ,  H03F1/0272 ,  H03F2200/207

摘要： A system and method is provided to compensate an amplifier circuit for changes in a load impedance in order to maintain a substantially optimum performance for the amplifier. More specifically, if the load impedance increases, then the amplifier is reconfigured to produce an output impedance that is likewise increased. One way of reconfiguring the amplifier for a load impedance increase is to increase the supply voltage to the device. The increase in the supply voltage to the device increases the rail to rail operation of the device. This would allow more dynamic range for the system performance. Assuming the current is substantially constant, the impedance seen the output of the amplifier will increase and be multiplied up to the impedance desired by the load resulting in a more optimum power transfer. Other parameters, such as the input drive and bias voltage to the amplifier can be changed in order to improve the performance of the amplifier.

摘要翻译： 提供了一种系统和方法来补偿放大器电路中负载阻抗的变化，以便为放大器保持基本上最佳的性能。 更具体地说，如果负载阻抗增加，则重新配置放大器以产生同样增加的输出阻抗。 重新配置放大器以满足负载阻抗增加的一种方法是增加设备的电源电压。 对设备的电源电压的增加增加了设备的轨到轨运行。 这将为系统性能提供更多的动态范围。 假设电流基本上是恒定的，放大器输出的阻抗会增加，并且乘以负载所需的阻抗，从而产生更优化的功率传输。 可以改变其他参数，例如放大器的输入驱动和偏置电压，以提高放大器的性能。

公开(公告)号：US06359324B1

公开(公告)日：2002-03-19

申请号：US09576647

申请日：2000-05-22

申请人： Larry M. Tichauer

发明人： Larry M. Tichauer

IPC分类号： H01L3106

CPC分类号： H01L31/103

摘要： A semiconductor device that has a p-n junction with a photosensitive region partially having a diffusion region and a non-diffused region when the p-n junction is subjected to a reverse bias voltage. When an incident light (e.g. a laser) is directed at the surface of the photosensitive region, hole-electron pairs are generated in the partial diffusion region within the photosensitive region. As a result, the current through the photosensitive region changes in a substantially linear fashion with the intensity of the incident light. The semiconductor device can be configured in a circuit to provide substantially linear power amplification. The semiconductor device can be configured by itself or with a complimentary device to form push-pull operations.

摘要翻译： 当p-n结受到反向偏置电压时，具有部分具有扩散区域和非扩散区域的光敏区域的p-n结的半导体器件。 当入射光（例如激光）指向光敏区域的表面时，在光敏区域内的部分扩散区域中产生空穴 - 电子对。 结果，通过光敏区域的电流以入射光的强度基本上线性地变化。 半导体器件可以配置在电路中以提供基本线性的功率放大。 半导体器件可以由其自身或互补器件构成以形成推挽操作。

公开(公告)号：US08747328B2

公开(公告)日：2014-06-10

申请号：US13097994

申请日：2011-04-29

申请人： Larry M. Tichauer

发明人： Larry M. Tichauer

IPC分类号： A61B5/02

CPC分类号： A61B5/0225 ,  A61B5/02255 ,  A61B5/025 ,  A61B2562/0247

摘要： The systems and methods monitor a subject's blood pressure under a constant applied pressure. Measurements taken from a pressure measuring element and a pulse sensing element are combined to determine the subject's systolic and diastolic pressure. The systolic pressure is measured directly by the pressure measuring element, and the diastolic pressure is determined indirectly by using a pulse waveform to extrapolate portions of a pressure waveform. The systems and methods can be employed in any number of applications, including, without limitation, taking a single reading from a subject, continuously monitoring a subject, or evaluating a subject during physical exertion.

摘要翻译： 系统和方法在恒定的施加压力下监测受试者的血压。 将来自压力测量元件和脉冲感测元件的测量结合以确定受试者的收缩压和舒张压。 通过压力测量元件直接测量收缩压，并且通过使用脉冲波形间接地推断部分压力波形来确定舒张压。 这些系统和方法可以用于任何数量的应用，包括但不限于在体力运动期间对受试者进行单次阅读，连续监测受试者或评估受试者。

公开(公告)号：US06486749B1

公开(公告)日：2002-11-26

申请号：US09566195

申请日：2000-05-05

申请人： Larry M. Tichauer ,  Louis D. Pines

发明人： Larry M. Tichauer ,  Louis D. Pines

IPC分类号： H01P512

CPC分类号： H01P5/12

摘要： A four-way power combiner/splitter is disclosed that includes a first transmission line having a first non-grounding conductor and a first grounding conductor, wherein the first grounding conductor is grounded at a first end of the first transmission line. The combiner/splitter also has a second transmission line having a second non-grounding conductor and a second grounding conductor, wherein the second grounding conductor is grounded at a first end of the second transmission line. The non-grounding conductors of the first and second transmission lines are electrically coupled together at the respective first ends of the first and second transmission lines. An output/input port is provided that is electrically coupled to the first and second non-grounding conductors at the respective first ends of the first and second transmission lines. Additionally provided are a first input/output port electrically coupled to the first non-grounding conductor at a second end of the first transmission line, a second input/output port electrically coupled to the first grounding conductor at the second end of the first transmission line, a third input/output port electrically coupled to the second non-grounding conductor at a second end of the second transmission line, and a fourth input/output port electrically coupled to the second grounding conductor at a second end of the second transmission line.

摘要翻译： 公开了一种四路功率合成器/分路器，其包括具有第一非接地导体和第一接地导体的第一传输线，其中第一接地导体在第一传输线的第一端接地。 组合器/分路器还具有第二传输线，其具有第二非接地导体和第二接地导体，其中第二接地导体在第二传输线的第一端接地。 第一和第二传输线的非接地导体在第一和第二传输线的相应的第一端电连接在一起。 提供了输出/输入端口，其在第一和第二传输线路的相应的第一端电耦合到第一和第二非接地导体。 另外提供了在第一传输线的第二端处电耦合到第一非接地导体的第一输入/输出端口，在第一传输线的第二端处电耦合到第一接地导体的第二输入/输出端口 在所述第二传输线的第二端电耦合到所述第二非接地导体的第三输入/输出端口，以及在所述第二传输线的第二端处电耦合到所述第二接地导体的第四输入/输出端口。

公开(公告)号：US06479846B2

公开(公告)日：2002-11-12

申请号：US09532389

申请日：2000-03-22

申请人： Larry M. Tichauer

发明人： Larry M. Tichauer

IPC分类号： H01L2976

CPC分类号： H01L29/7835 ,  H01L29/1045

摘要： A field effect transistor is disclosed having a relatively high doped region (of the same type dopant as the channel) to reduce the change in the depletion region within the channel with changes in the drain voltage (Vd). Changes in the drain current (Id) with changes in the drain voltage (Vd) is a cause of non-linearity for traditional MOSFET. Because of the additional higher doped region provided in the channel, the depletion region within the higher doped region changes less with changes in the drain voltage (Vd). The higher doped region is situated near the top of the channel, where most of the drain current flows. Thus, the higher doped region dominates the drain current through the device. Since the drain current is less susceptible to changes in drain voltage (Vd), a more linear device results.

摘要翻译： 公开了一种场效应晶体管，其具有相对较高的掺杂区（与沟道相同类型掺杂剂），以通过漏极电压（Vd）的变化来减小沟道内的耗尽区的变化。 漏极电流（Id）随漏极电压（Vd）变化的变化是传统MOSFET非线性的原因。 由于沟道中提供的额外的较高掺杂区域，较高掺杂区域内的耗尽区随着漏极电压（Vd）的变化而变化较小。 较高掺杂区域位于通道顶部附近，其中大部分漏极电流流动。 因此，较高掺杂区域支配通过器件的漏极电流。 由于漏极电流不易受漏极电压（Vd）的变化的影响，因此会产生更线性的器件。

公开(公告)号：US06800915B2

公开(公告)日：2004-10-05

申请号：US10071789

申请日：2002-02-06

申请人： Larry M. Tichauer

发明人： Larry M. Tichauer

IPC分类号： H01L3106

CPC分类号： H01L31/103

摘要： A semiconductor device that has a p-n junction with a photosensitive region partially having a diffusion region and a non-diffused region when the p-n junction is subjected to a reverse bias voltage. When an incident light (e.g. a laser) is directed at the surface of the photosensitive region, hole-electron pairs are generated in the partial diffusion region within the photosensitive region. As a result, the current through the photosensitive region changes in a substantially linear fashion with the intensity of the incident light. The semiconductor device can be configured in a circuit to provide substantially linear power amplification. The semiconductor device can be configured by itself or with a complimentary device to form push-pull operations.

摘要翻译： 当p-n结受到反向偏置电压时，具有部分具有扩散区域和非扩散区域的光敏区域的p-n结的半导体器件。 当入射光（例如激光）指向光敏区域的表面时，在光敏区域内的部分扩散区域中产生空穴 - 电子对。 结果，通过光敏区域的电流以入射光的强度基本上线性地变化。 半导体器件可以配置在电路中以提供基本线性的功率放大。 半导体器件可以由其自身或互补器件构成以形成推挽操作。

公开(公告)号：US06597244B2

公开(公告)日：2003-07-22

申请号：US10068201

申请日：2002-02-05

申请人： Larry M. Tichauer

发明人： Larry M. Tichauer

IPC分类号： H03F152

CPC分类号： H04B1/0458 ,  H03F1/0261 ,  H03F1/0272 ,  H03F2200/207

摘要： A system and method is provided to compensate an amplifier circuit for changes in a load impedance in order to maintain a substantially optimum performance for the amplifier. More specifically, if the load impedance increases, then the amplifier is reconfigured to produce an output impedance that is likewise increased. One way of reconfiguring the amplifier for a load impedance increase is to increase the supply voltage to the device. The increase in the supply voltage to the device increases the rail to rail operation of the device. This would allow more dynamic range for the system performance. Assuming the current is substantially constant, the impedance seen the output of the amplifier will increase and be multiplied up to the impedance desired by the load resulting in a more optimum power transfer. Other parameters, such as the input drive and bias voltage to the amplifier can be changed in order to improve the performance of the amplifier.

公开(公告)号：US06410970B1

公开(公告)日：2002-06-25

申请号：US09532581

申请日：2000-03-22

申请人： Larry M. Tichauer

发明人： Larry M. Tichauer

IPC分类号： H01L31105

CPC分类号： H01L31/103

摘要： A semiconductor device that has a p-n junction with a photosensitive region partially having a diffusion region and a non-diffused region when the p-n junction is subjected to a reverse bias voltage. When an incident light (e.g. a laser) is directed at the surface of the photosensitive region, hole-electron pairs are generated in the partial diffusion region within the photosensitive region. As a result, the current through the photosensitive region changes in a substantially linear fashion with the intensity of the incident light. The semiconductor device can be configured in a circuit to provide substantially linear power amplification.

摘要翻译： 当p-n结受到反向偏置电压时，具有部分具有扩散区域和非扩散区域的光敏区域的p-n结的半导体器件。 当入射光（例如激光）指向光敏区域的表面时，在光敏区域内的部分扩散区域中产生空穴 - 电子对。 结果，通过光敏区域的电流以入射光的强度基本上线性地变化。 半导体器件可以配置在电路中以提供基本线性的功率放大。