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    Hybrid interconnect structure for performance improvement and reliability enhancement
    7.
    发明授权
    Hybrid interconnect structure for performance improvement and reliability enhancement 有权
    混合互连结构，用于性能改进和可靠性提升

    公开(公告)号：US07973409B2

    公开(公告)日：2011-07-05

    申请号：US11625576

    申请日：2007-01-22

    申请人： Chih-Chao Yang ,  Thomas M. Shaw ,  Keith Kwong Hon Wong ,  Haining S. Yang

    发明人： Chih-Chao Yang ,  Thomas M. Shaw ,  Keith Kwong Hon Wong ,  Haining S. Yang

    IPC分类号： H01L21/00

    CPC分类号： H01L21/76841 ,  H01L21/7682 ,  H01L21/76831 ,  H01L23/481 ,  H01L23/5222 ,  H01L23/53223 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides an interconnect structure (of the single or dual damascene type) and a method of forming the same, in which a dense (i.e., non-porous) dielectric spacer is present on the sidewalls of a dielectric material. More specifically, the inventive structure includes a dielectric material having a conductive material embedded within at least one opening in the dielectric material, wherein the conductive material is laterally spaced apart from the dielectric material by a diffusion barrier, a dense dielectric spacer and, optionally, an air gap. The presence of the dense dielectric spacer results in a hybrid interconnect structure that has improved reliability and performance as compared with existing prior art interconnect structures which do not include such dense dielectric spacers. Moreover, the inventive hybrid interconnect structure provides for better process control which leads to the potential for high volume manufacturing.

    摘要翻译： 本发明提供了一种互连结构（单镶嵌型或双镶嵌型）及其形成方法，其中在电介质材料的侧壁上存在致密的（即非多孔的）电介质间隔物。 更具体地，本发明的结构包括介电材料，其具有嵌入介电材料中的至少一个开口中的导电材料，其中导电材料通过扩散阻挡层，致密电介质间隔物和任选地， 气隙。 与现有技术的不包括这种致密电介质间隔物的互连结构相比，密集电介质间隔物的存在导致混合互连结构具有改进的可靠性和性能。 此外，本发明的混合互连结构提供了更好的过程控制，这导致了大批量制造的潜力。

    REDUNDANT METAL BARRIER STRUCTURE FOR INTERCONNECT APPLICATIONS
    8.
    发明申请
    REDUNDANT METAL BARRIER STRUCTURE FOR INTERCONNECT APPLICATIONS 有权
    用于互连应用的冗余金属屏障结构

    公开(公告)号：US20100295181A1

    公开(公告)日：2010-11-25

    申请号：US12468478

    申请日：2009-05-19

    申请人： Chih-Chao Yang ,  Thomas M. Shaw

    发明人： Chih-Chao Yang ,  Thomas M. Shaw

    IPC分类号： H01L23/522 ,  H01L21/768

    CPC分类号： H01L21/76846 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A redundant metal diffusion barrier is provided for an interconnect structure which improves the reliability and extendibility of the interconnect structure. The redundant metal diffusion barrier layer is located within an opening that is located within a dielectric material and it is between a diffusion barrier layer and a conductive material which are also present within the opening. The redundant diffusion barrier includes a single layered or multilayered structure comprising Ru and a Co-containing material including pure Co or a Co alloy including at least one of N, B and P.

    摘要翻译： 为互连结构提供冗余金属扩散屏障，从而提高互连结构的可靠性和可扩展性。 冗余金属扩散阻挡层位于位于电介质材料内的开口内，并且位于扩散阻挡层和也存在于开口内的导电材料之间。 冗余扩散阻挡层包括单层或多层结构，其包含Ru和包含纯Co或Co合金的含Co材料，其包括N，B和P中的至少一种。

    BARRIER SEQUENCE FOR USE IN COPPER INTERCONNECT METALLIZATION
    9.
    发明申请
    BARRIER SEQUENCE FOR USE IN COPPER INTERCONNECT METALLIZATION 有权
    用于铜相互连接金属化的栅栏序列

    公开(公告)号：US20130005137A1

    公开(公告)日：2013-01-03

    申请号：US13609668

    申请日：2012-09-11

    申请人： Takeshi Nogami ,  Thomas M. Shaw ,  Andrew H. Simon ,  Jean E. Wynne ,  Chih-Chao Yang

    发明人： Takeshi Nogami ,  Thomas M. Shaw ,  Andrew H. Simon ,  Jean E. Wynne ,  Chih-Chao Yang

    IPC分类号： H01L21/768

    CPC分类号： H01L23/53238 ,  H01L21/76844 ,  H01L21/76846 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A method patterns at least one opening in a low-K insulator layer of a multi-level integrated circuit structure, such that a copper conductor is exposed at the bottom of the opening. The method then lines the sidewalls and the bottom of the opening with a first Tantalum Nitride layer in a first chamber and forms a Tantalum layer on the first Tantalum Nitride layer in the first chamber. Next, sputter etching on the opening is performed in the first chamber, so as to expose the conductor at the bottom of the opening. A second Tantalum Nitride layer is formed on the conductor, the Tantalum layer, and the first Tantalum Nitride layer, again in the first chamber. After the second Tantalum Nitride layer is formed, the methods herein form a flash layer comprising a Platinum group metal on the second Tantalum Nitride layer in a second, different chamber.

    摘要翻译： 一种方法图形为多级集成电路结构的低K绝缘体层中的至少一个开口，使得铜导体在开口的底部露出。 该方法然后在第一室中用第一钽氮化物层排列开口的侧壁和底部，并在第一室中的第一氮化钽层上形成钽层。 接下来，在第一室中进行对开口的溅射蚀刻，以使开口底部的导体露出。 在第一室中再次在导体，钽层和第一氮化钽层上形成第二钽氮化物层。 在形成第二钽氮化物层之后，本文的方法在第二不同室中在第二氮化钽层上形成包含铂族金属的闪蒸层。

    Redundant metal barrier structure for interconnect applications
    10.
    发明授权
    Redundant metal barrier structure for interconnect applications 有权
    用于互连应用的冗余金属屏障结构

    公开(公告)号：US08242600B2

    公开(公告)日：2012-08-14

    申请号：US12468478

    申请日：2009-05-19

    申请人： Chih-Chao Yang ,  Thomas M. Shaw

    发明人： Chih-Chao Yang ,  Thomas M. Shaw

    IPC分类号： H01L23/522

    CPC分类号： H01L21/76846 ,  H01L21/76843 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A redundant metal diffusion barrier is provided for an interconnect structure which improves the reliability and extendibility of the interconnect structure. The redundant metal diffusion barrier layer is located within an opening that is located within a dielectric material and it is between a diffusion barrier layer and a conductive material which are also present within the opening. The redundant diffusion barrier includes a single layered or multilayered structure comprising Ru and a Co-containing material including pure Co or a Co alloy including at least one of N, B and P.

    摘要翻译： 为互连结构提供冗余金属扩散屏障，从而提高互连结构的可靠性和可扩展性。 冗余金属扩散阻挡层位于位于电介质材料内的开口内，并且位于扩散阻挡层和也存在于开口内的导电材料之间。 冗余扩散阻挡层包括单层或多层结构，其包含Ru和包含纯Co或Co合金的含Co材料，其包括N，B和P中的至少一种。