Integrated facility and process chamber for substrate processing
    7.
    发明申请
    Integrated facility and process chamber for substrate processing 审中-公开
    用于基板加工的集成设备和处理室

    公开(公告)号:US20100162954A1

    公开(公告)日:2010-07-01

    申请号:US12319224

    申请日:2008-12-31

    IPC分类号: C23C16/00

    摘要: In accordance with some embodiments described herein, a process module facility is provided, comprising: at least one process chamber carried in frame, a subfloor adjacent the process module, a stationary pump and electrical box positioned atop the subfloor; and gas control lines and vacuum exhaust lines housed within the subfloor and coupled the process chamber. The process module facility may be integrated with a larger system for processing substrates which includes two or more process module facilities, a substrate handling robot, a load lock chamber, and a transverse substrate handler. The transverse substrate handler includes mobile transverse chambers configured to convey substrates to process modules, wherein each mobile transverse chamber is configured to maintain a specified gas condition during the conveyance of the substrates. The transverse substrate handler further includes a rail for supporting the mobile transverse chambers, wherein the rail is positioned adjacent to entry of the process modules, and drive systems for moving the mobile transverse chambers on the rail.

    摘要翻译: 根据本文所述的一些实施例,提供了一种处理模块设施,包括:至少一个框架承载的处理室,邻近处理模块的底层地板,定位在底层地板顶部的固定泵和电箱; 以及气体控制管线和真空排气管线,其容纳在底层地板内并且连接处理室。 过程模块设备可以与更大的系统集成,用于处理基板,其包括两个或更多个处理模块设施,基板处理机器人,负载锁定室和横向基板处理器。 横向基板处理器包括被配置为将基板输送到处理模块的移动横向室,其中每个移动横向室被构造成在输送基板期间保持特定的气体状态。 横向基板处理器还包括用于支撑移动横向室的轨道,其中轨道邻近进程模块的进入定位,以及用于将移动横向室移动到轨道上的驱动系统。

    Integrated temperature controlled exhaust and cold trap assembly
    8.
    发明授权
    Integrated temperature controlled exhaust and cold trap assembly 有权
    集成温度控制排气和冷阱组件

    公开(公告)号:US06206971B1

    公开(公告)日:2001-03-27

    申请号:US09281998

    申请日:1999-03-29

    IPC分类号: C23C1600

    摘要: A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.

    摘要翻译: 具有冷阱能力的温度控制排气组件。 排气组件的一个实施例包括允许独立的多区域闭环温度控制的多加热器设计。 另一个实施例包括紧凑的多阀单体设计,其包括用于简化闭环温度控制的单个加热器。 冷阱包含一个加热器,用于在陷阱入口进行温度控制,以尽量减少不必要的沉积物。 一个实施例还包括多级冷阱和颗粒捕集器。 作为可拆卸单元,该冷阱在吸附的可冷凝物的处理和处理中提供了额外的安全性。

    Cold trap assembly
    9.
    发明授权
    Cold trap assembly 有权
    冷阱装配

    公开(公告)号:US06517592B2

    公开(公告)日:2003-02-11

    申请号:US09740120

    申请日:2000-12-19

    IPC分类号: B01D4508

    摘要: A temperature-controlled exhaust assembly with cold trap capability. One embodiment of the exhaust assembly comprises a multi-heater design which allows for independent multi-zone closed-loop temperature control. Another embodiment comprises a compact multi-valve uni-body design incorporating a single heater for simplified closed-loop temperature control. The cold trap incorporates a heater for temperature control at the inlet of the trap to minimize undesirable deposits. One embodiment also comprises a multi-stage cold trap and a particle trap. As a removable unit, this cold trap provides additional safety in the handling and disposal of the adsorbed condensables.

    摘要翻译: 具有冷阱能力的温度控制排气组件。 排气组件的一个实施例包括允许独立的多区域闭环温度控制的多加热器设计。 另一个实施例包括紧凑的多阀单体设计,其包括用于简化闭环温度控制的单个加热器。 冷阱包含一个加热器,用于在陷阱入口进行温度控制,以尽量减少不必要的沉积物。 一个实施例还包括多级冷阱和颗粒捕集器。 作为可拆卸单元,该冷阱在吸附的可冷凝物的处理和处理中提供了额外的安全性。

    Method for improved remote microwave plasma source for use with substrate processing system
    10.
    发明授权
    Method for improved remote microwave plasma source for use with substrate processing system 失效
    用于改善用于衬底处理系统的远程微波等离子体源的方法

    公开(公告)号:US06271148B1

    公开(公告)日:2001-08-07

    申请号:US09416861

    申请日:1999-10-13

    IPC分类号: H01L21302

    摘要: An apparatus and methods for an upgraded CVD system providing a remote plasma for efficiently cleaning a chamber, according to a specific embodiment. Etching or depositing a layer onto a substrate also may be achieved using the upgraded CVD system of the present invention. In a specific embodiment, the present invention provides apparatus for an easily removable, conveniently handled, and relatively inexpensive, robust microwave plasma source as a retrofit for or a removable addition to existing CVD apparatus. The present invention provides an improved CVD apparatus or retrofit of existing CVD apparatus capable of producing a remote plasma for efficiently cleaning the chamber.

    摘要翻译: 根据具体实施例的用于提供用于有效清洁腔室的远程等离子体的升级CVD系统的装置和方法。 使用本发明的升级的CVD系统也可以实现在基板上的蚀刻或沉积层。 在具体实施例中,本发明提供了一种用于易于移除,方便处理且相对便宜的鲁棒微波等离子体源的装置,作为对现有CVD设备的改进或可移除的添加。 本发明提供了一种改进的CVD装置或改进现有CVD装置,其能够产生用于有效清洁腔室的远程等离子体。