公开(公告)号：US5102231A

公开(公告)日：1992-04-07

申请号：US647085

申请日：1991-01-29

申请人： Lee M. Loewenstein ,  John D. Lawrence ,  Wayne G. Fisher ,  Cecil J. Davis

发明人： Lee M. Loewenstein ,  John D. Lawrence ,  Wayne G. Fisher ,  Cecil J. Davis

IPC分类号： G01K5/52

CPC分类号： G01K5/52

摘要： A system for measuring the temperature of a semiconductor wafer 12 comprises a light source 14, a photodetector 20 which is operable to determine light intensity, and a mirror 18 in a predetermined fixed position from a beam splitter 16. The components are positioned such that light from the light source 14 impinges the beam splitter 16 and subsequently reflects off the mirror 18 and the wafer 12 and is received by the photodetector 20. Changes in the temperature of the wafer 12 are calculated based upon changes in the intensity of the received light which depends upon the expansion/contraction of the wafer. The absolute temperature may be calculated based on a known reference temperature and the changes in wafer 12 temperature. A second system and method for measuring the temperature of a semiconductor wafer which includes the use of a plurality of mirrors and two beam splitters is also disclosed.

摘要翻译： 用于测量半导体晶片12的温度的系统包括光源14，可操作以确定光强度的光电检测器20和来自分束器16的预定固定位置的反射镜18.部件被定位成使得光 从光源14入射分束器16，随后从反射镜18和晶片12反射并被光电检测器20接收。晶片12的温度变化基于接收光强度的变化来计算， 取决于晶片的膨胀/收缩。 可以基于已知的参考温度和晶片12温度的变化来计算绝对温度。 还公开了一种用于测量包括使用多个反射镜和两个分束器的半导体晶片的温度的第二系统和方法。

公开(公告)号：US5262610A

公开(公告)日：1993-11-16

申请号：US677048

申请日：1991-03-29

申请人： Steve S. Huang ,  Cecil J. Davis ,  Rhett B. Jucha ,  Lee M. Loewenstein

发明人： Steve S. Huang ,  Cecil J. Davis ,  Rhett B. Jucha ,  Lee M. Loewenstein

IPC分类号： H01J37/32 ,  B23K9/00

CPC分类号： H01J37/32256 ,  H01J37/32357

摘要： A remote microwave plasma generator comprises the combination of two parts, a tunable microwave applicator, and a double wall, water cooled quartz/sapphire tube. The tunable waveguide applicator is a nonconducting adjustable waveguide short with a quartz/sapphire tube inserted through it. The adjustable end is one quarter of a guide wavelength from the center line of the tube, and the other side is 0.1 inches less in distance, thus permitting the applicator to be used with a triple stub tuner for optimum coupling.

摘要翻译： 远程微波等离子体发生器包括两部分的组合，可调谐微波施加器和双壁水冷石英/蓝宝石管。 可调谐波导管施加器是一个不导电的可调节波导管，其中插入有石英/蓝宝石管。 可调节端距离管的中心线的四分之一的引导波长，另一侧距离较小0.1英寸，因此允许施加器与三根短线调谐器一起使用以实现最佳耦合。

公开(公告)号：US4867841A

公开(公告)日：1989-09-19

申请号：US203585

申请日：1988-05-27

申请人： Lee M. Loewenstein ,  Cecil J. Davis ,  Rhett B. Jucha

发明人： Lee M. Loewenstein ,  Cecil J. Davis ,  Rhett B. Jucha

IPC分类号： H01L21/3213

CPC分类号： H01L21/32137

摘要： A process for etch of polysilicon films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium and a source of Fluorine with the process chamber within the process module being generally at ambient temperatures.

摘要翻译： 用于蚀刻多晶硅膜的方法，其利用低压工艺模块中的远程和原位等离子体的组合以及来自氦和氟源的混合物的等离子体，处理模块内的处理室通常为环境温度 温度。

公开(公告)号：US4842676A

公开(公告)日：1989-06-27

申请号：US122605

申请日：1987-11-17

申请人： Rhett B. Jucha ,  Cecil J. Davis ,  Lee M. Loewenstein

发明人： Rhett B. Jucha ,  Cecil J. Davis ,  Lee M. Loewenstein

IPC分类号： C23F4/00 ,  H01L21/3213

CPC分类号： H01L21/32136 ,  C23F4/00

摘要： A process for etch of tungsten which utilizes both in situ and remote plasmas, and a gas mixture for the plasma which comprises SF.sub.6, HBr, and a source of hydrocarbons at low pressure and ambient temperature to product an etch which is both selective to silicon dioxide and photoresist and anisotropic.

摘要翻译： 用于蚀刻钨的方法，其利用原位和远程等离子体，以及用于等离子体的气体混合物，其包含SF 6，HBr和在低压和环境温度下的烃源，以产生对二氧化硅有选择性的蚀刻 和光致抗蚀剂和各向异性。

公开(公告)号：US5248636A

公开(公告)日：1993-09-28

申请号：US892460

申请日：1992-06-02

申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

CPC分类号： C23C16/54 ,  C23C16/482 ,  C23C16/517

摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, delete but this transparent window is not made thick enough to act as a full vacuum seal.

摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 通过在真空室内而远离晶片表面的等离子体产生照射正在处理的晶片的表面的紫外光。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间之间有效地包含透明隔离器，使得紫外等离子体可以在与晶片表面附近的真空度稍微不同的真空度下进行操作，但是该透明窗口未被制成 足够厚以充当真空密封。

公开(公告)号：US4886570A

公开(公告)日：1989-12-12

申请号：US282993

申请日：1988-12-02

申请人： Cecil J. Davis ,  Robert T. Matthews ,  Lee M. Loewenstein ,  Rhett B. Jucha ,  Randall C. Hildenbrand ,  John I. Jones

发明人： Cecil J. Davis ,  Robert T. Matthews ,  Lee M. Loewenstein ,  Rhett B. Jucha ,  Randall C. Hildenbrand ,  John I. Jones

IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/52 ,  C23C16/54

CPC分类号： C23C16/482 ,  C23C16/517 ,  C23C16/52 ,  C23C16/54

摘要： A process module having remote plasma and in situ plasma generators, a source of ultraviolet, and a radiant heater, which represent four separate energy sources. The four sources can be used singly or in any combination and can be separately controllable.

摘要翻译： 具有远程等离子体和原位等离子体发生器，紫外线源和辐射加热器的处理模块，其表示四个单独的能量源。 四种来源可以单独使用，也可以任意组合使用，可单独使用。

公开(公告)号：US4878994A

公开(公告)日：1989-11-07

申请号：US174649

申请日：1988-03-29

申请人： Rhett B. Jucha ,  Cecil J. Davis ,  Tom Tang ,  Lee M. Loewenstein

发明人： Rhett B. Jucha ,  Cecil J. Davis ,  Tom Tang ,  Lee M. Loewenstein

IPC分类号： C04B41/53 ,  C04B41/91 ,  C23F4/00 ,  H01L21/3213

CPC分类号： C04B41/5346 ,  C04B41/91 ,  C23F4/00 ,  H01L21/32136

摘要： A process for the etching of titanium containing film which utilizes both in situ and remote plasmas, and a gas mixture for the plasmas which comprises a halogen gas at low pressure and moderate temperature to produce an etch which is both selective to selected materials, for example, titanium silicide etc., and anisotropic.

摘要翻译： 用于蚀刻含钛膜的方法，其利用原位和远程等离子体，以及用于等离子体的气体混合物，其包括在低压和中等温度下的卤素气体，以产生对所选材料选择性的蚀刻，例如 ，硅化钛等，各向异性。

公开(公告)号：US4836905A

公开(公告)日：1989-06-06

申请号：US75018

申请日：1987-07-16

申请人： Cecil J. Davis ,  Joseph V. Abernathy ,  Robert T. Matthews ,  Randall C. Hildenbrand ,  Bruce Simpson ,  James G. Bohlman ,  Lee M. Loewenstein ,  John I. Jones

发明人： Cecil J. Davis ,  Joseph V. Abernathy ,  Robert T. Matthews ,  Randall C. Hildenbrand ,  Bruce Simpson ,  James G. Bohlman ,  Lee M. Loewenstein ,  John I. Jones

IPC分类号： C23C14/56 ,  C23F4/00 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01L21/67748 ,  C23C14/50 ,  C23C14/568 ,  C23F4/00 ,  H01L21/67115 ,  H01L21/67751 ,  Y10S414/136 ,  Y10S414/137

摘要： A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.

摘要翻译： 允许溅射沉积并与真空处理系统相容的处理装置和方法，其中晶片在面朝下的位置被大量地转移和处理。 这包括另外的晶片运动，其中在将晶片面朝下放置之后，可将其固定在基座上的位置，基座从其近似水平的位置旋转到更接近垂直的位置。 当晶片处于更接近垂直的位置时，可以进行溅射沉积。 原位或远程等离子体能力有效地提供在腔室的底部，从而可以在晶片处于其基本水平的位置时进行干燥的消光或清洁步骤，接着在晶片移动到 它更接近垂直的位置。

公开(公告)号：US4828649A

公开(公告)日：1989-05-09

申请号：US198633

申请日：1988-05-18

申请人： Cecil J. Davis ,  Lee M. Loewenstein ,  Rhett B. Jucha

发明人： Cecil J. Davis ,  Lee M. Loewenstein ,  Rhett B. Jucha

IPC分类号： C23F4/00 ,  H01L21/3213

CPC分类号： H01L21/32136 ,  C23F4/00

摘要： A process for etch of Silicon doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium, BCl.sub.3, and Cl.sub.2, and with the process chamber within the process module being generally at ambient temperatures.

摘要翻译： 利用在低压工艺模块中的远程和原位等离子体的组合以及等离子体的硅掺杂铝膜的蚀刻工艺由氦，BCl 3和Cl 2的混合物以及工艺模块内的处理室产生 一般在环境温度。

公开(公告)号：US5138973A

公开(公告)日：1992-08-18

申请号：US282917

申请日：1988-12-05

申请人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

发明人： Cecil J. Davis ,  Rhett B. Jucha ,  Joseph D. Luttmer ,  Rudy L. York ,  Lee M. Loewenstein ,  Robert T. Matthews ,  Randall C. Hildenbrand

IPC分类号： C23C16/48 ,  C23C16/517 ,  C23C16/54

CPC分类号： C23C16/482 ,  C23C16/517 ,  C23C16/54

摘要： A processing apparatus and method wherein a wafer is exposed to activated species generated by a first plasma which is separate from the wafer, but is in the process gas flow stream upstream of the wafer, and is also exposed to plasma bombardment generated by a second plasma which has a dark space which substantially adjoins the surface of the wafer. The in situ plasma is relatively low-power, so that the remote plasma can generate activated species, and therefore the in situ plasma power level can be adjusted to optimize the plasma bombardment. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum chamber but is remote from the face of the wafer and controlled independent of the in situ plasma. It is useful to design the gas flow system such that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator is usefully included between the ultraviolet plasma space and the processing space near the wafer face, so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face.

摘要翻译： 一种处理装置和方法，其中晶片暴露于由与晶片分离的第一等离子体产生的活化物质，但处于晶片上游的处理气流中，并且还暴露于由第二等离子体产生的等离子体轰击 其具有基本上邻接晶片表面的暗空间。 原位等离子体功率相对较低，远距离等离子体可以产生活化物质，因此可以调整原位等离子体功率水平以优化等离子体轰击。 照亮正在处理的晶片的表面的紫外线是通过等离子体产生的，该等离子体位于真空室内，但远离晶片的表面并独立于原位等离子体进行控制。 设计气体流动系统是有用的，使得紫外线发生等离子体具有其自身的气体进料，并且来自紫外线发生等离子体的反应产物基本上不流动或扩散到晶片面。 紫外等离子体空间与晶片表面附近的处理空间有效地包含透明隔离器，使得紫外线等离子体能够在与晶片面附近使用的真空度稍微不同的真空度下工作。