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公开(公告)号：US09059144B2
公开(公告)日：2015-06-16
申请号：US13403458
申请日：2012-02-23
IPC分类号： H01L23/34 , H01L23/433 , H01L21/56 , H01L23/31
CPC分类号： H01L23/4334 , H01L21/566 , H01L23/3128 , H01L24/73 , H01L2224/16225 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/48247 , H01L2224/73215 , H01L2224/73253 , H01L2224/73265 , H01L2924/15311 , H01L2924/1815 , H01L2924/00012 , H01L2924/00
摘要： A method for forming a molded die assembly includes attaching a first major surface of a semiconductor die onto a package substrate; attaching a heat spreader to a second major surface of the semiconductor die, wherein the second major surface is opposite the first major surface, and wherein the semiconductor die, package substrate, and heat spreader form a die assembly; conforming a die release film to a transfer mold; closing the transfer mold around the die assembly such that the die release film is compressed against the heat spreader and a cavity is formed around the die assembly; transferring a thermoset material into the cavity; and releasing the die assembly from the die release film and the transfer mold.
摘要翻译： 一种用于形成模制模具组件的方法包括将半导体管芯的第一主表面附接到封装衬底上; 将散热器附接到所述半导体管芯的第二主表面，其中所述第二主表面与所述第一主表面相对，并且其中所述半导体管芯，封装衬底和散热器形成管芯组件; 将脱模膜贴合到转移模具上; 关闭模具组件周围的转移模具，使得脱模膜压靠散热器并且在模具组件周围形成空腔; 将热固性材料转移到空腔中; 以及从模具脱模膜和转移模具中释放模具组件。
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公开(公告)号：US20130221511A1
公开(公告)日：2013-08-29
申请号：US13403458
申请日：2012-02-23
CPC分类号： H01L23/4334 , H01L21/566 , H01L23/3128 , H01L24/73 , H01L2224/16225 , H01L2224/32225 , H01L2224/32245 , H01L2224/48227 , H01L2224/48247 , H01L2224/73215 , H01L2224/73253 , H01L2224/73265 , H01L2924/15311 , H01L2924/1815 , H01L2924/00012 , H01L2924/00
摘要： A method for forming a molded die assembly includes attaching a first major surface of a semiconductor die onto a package substrate; attaching a heat spreader to a second major surface of the semiconductor die, wherein the second major surface is opposite the first major surface, and wherein the semiconductor die, package substrate, and heat spreader form a die assembly; conforming a die release film to a transfer mold; closing the transfer mold around the die assembly such that the die release film is compressed against the heat spreader and a cavity is formed around the die assembly; transferring a thermoset material into the cavity; and releasing the die assembly from the die release film and the transfer mold.
摘要翻译： 一种用于形成模制模具组件的方法包括将半导体管芯的第一主表面附接到封装衬底上; 将散热器附接到所述半导体管芯的第二主表面，其中所述第二主表面与所述第一主表面相对，并且其中所述半导体管芯，封装衬底和散热器形成管芯组件; 将脱模膜贴合到转移模具上; 关闭模具组件周围的转移模具，使得脱模膜压靠散热器并且在模具组件周围形成空腔; 将热固性材料转移到空腔中; 以及从模具脱模膜和转移模具中释放模具组件。
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公开(公告)号：US20150380376A1
公开(公告)日：2015-12-31
申请号：US14314260
申请日：2014-06-25
IPC分类号： H01L23/00 , H01L23/495 , H01L23/498
CPC分类号： H01L24/49 , H01L23/49582 , H01L23/49811 , H01L23/49816 , H01L23/49866 , H01L23/53238 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L24/92 , H01L2224/02166 , H01L2224/04042 , H01L2224/05082 , H01L2224/05147 , H01L2224/05657 , H01L2224/2919 , H01L2224/32225 , H01L2224/32245 , H01L2224/45124 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/45565 , H01L2224/45624 , H01L2224/45639 , H01L2224/45644 , H01L2224/45655 , H01L2224/45657 , H01L2224/45664 , H01L2224/48091 , H01L2224/48227 , H01L2224/48228 , H01L2224/48247 , H01L2224/48257 , H01L2224/48463 , H01L2224/48465 , H01L2224/48471 , H01L2224/48479 , H01L2224/48482 , H01L2224/73265 , H01L2224/83101 , H01L2224/85051 , H01L2224/85207 , H01L2224/85801 , H01L2224/92247 , H01L2924/15311 , H01L2924/15747 , H01L2924/181 , H01L2924/00012 , H01L2924/00014 , H01L2924/01005 , H01L2924/01074 , H01L2924/01015 , H01L2924/01075 , H01L2924/013 , H01L2924/00013 , H01L2924/0665 , H01L2924/00
摘要： The present disclosure provides embodiments of package devices and methods for making package devices for a semiconductor die. One embodiment includes a die mounting structure having a finished bond pad that includes a copper bond pad and a cobalt-containing layer over a top surface of the copper bond pad, and a wire bond structure that is bonded to a top surface of the cobalt-containing layer of the finished bond pad, where cobalt-containing material of the cobalt-containing layer is located between a bottom surface of the wire bond structure and the top surface of the copper bond pad such that the cobalt-containing material is present under a center portion of the wire bond structure.
摘要翻译： 本公开提供了用于制造用于半导体管芯的封装器件的封装器件和方法的实施例。 一个实施例包括具有完成的接合焊盘的管芯安装结构，该焊接垫在铜焊盘的顶表面上包括铜接合焊盘和含钴层，以及引线键合结构，其结合到钴 - 其中含钴层的含钴材料位于引线键合结构的底表面和铜键合焊盘的顶表面之间，使得含钴材料存在于 引线接合结构的中心部分。
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公开(公告)号：US20150118791A1
公开(公告)日：2015-04-30
申请号：US14069103
申请日：2013-10-31
IPC分类号： H01L23/00
CPC分类号： H01L24/05 , H01L21/4864 , H01L23/3121 , H01L23/49827 , H01L23/49866 , H01L23/49894 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/85 , H01L24/92 , H01L2224/04042 , H01L2224/05599 , H01L2224/26175 , H01L2224/2919 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48228 , H01L2224/48235 , H01L2224/48465 , H01L2224/73265 , H01L2224/85011 , H01L2224/85399 , H01L2224/85447 , H01L2224/8548 , H01L2224/85484 , H01L2224/92247 , H01L2924/00014 , H01L2924/1531 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2224/48227 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A method of making a package substrate having a copper bond pad and a location for receiving a semiconductor die having a remnant of one of a group consisting of HEDP and an HEDP derivative on a top surface of the copper bond pad. The semiconductor die is attached to the substrate. A wirebond connection is attached between the remnant and the semiconductor die.
摘要翻译： 一种制造具有铜键合焊盘的封装衬底的方法和用于接收在铜键合焊盘的顶表面上具有由HEDP和HEDP衍生物组成的组中的一种的残留物的半导体管芯的位置。 半导体管芯附着在基板上。 引线接合连接在残余物和半导体管芯之间。
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公开(公告)号：US08754521B1
公开(公告)日：2014-06-17
申请号：US13799031
申请日：2013-03-13
CPC分类号： H01L21/565 , H01L23/433 , H01L2224/48091 , H01L2224/8592 , H01L2924/181 , H01L2924/00014 , H01L2924/00012
摘要： A packaged semiconductor device includes a package substrate, a semiconductor die on the package substrate, an encapsulant over the semiconductor die and package substrate, and a heat spreader having a pedestal portion and an outer portion surrounding the pedestal portion. The encapsulant includes an opening within a perimeter of the semiconductor die. The bottom surface of the pedestal portion of the heat spreader faces the top surface of the semiconductor die, wherein a first portion of the opening and at least a portion of the encapsulant is between the bottom surface of the pedestal portion and the semiconductor die.
摘要翻译： 封装半导体器件包括封装基板，封装基板上的半导体管芯，半导体管芯和封装基板上的密封剂，以及具有基座部分和围绕基座部分的外部部分的散热器。 密封剂包括在半导体管芯的周边内的开口。 散热器基座部分的底面朝向半导体管芯的顶表面，其中开口的第一部分和密封剂的至少一部分位于基座部分的底表面和半导体管芯之间。
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6.发明授权公开(公告)号：US09111878B2
公开(公告)日：2015-08-18
申请号：US13755904
申请日：2013-01-31
CPC分类号： H01L23/3121 , H01L21/565 , H01L23/36 , H01L23/42 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A method includes providing an integrated circuit (IC) die assembly that includes a substrate and an IC die mounted on a portion of a major surface of the substrate, dispensing an interface material on the IC die, positioning a portion of a heat spreader in contact with the interface material, and dispensing an adhesive between one side of the heat spreader facing the IC die assembly and exposed portions of a major surface of an encapsulant on the substrate.
摘要翻译： 一种方法包括提供集成电路（IC）模具组件，其包括衬底和安装在衬底的主表面的一部分上的IC模具，在IC模具上分配界面材料，将散热器的一部分定位成接触 并且在散热器的面对IC模具组件的一侧和衬底上的密封剂的主表面的暴露部分之间分配粘合剂。
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公开(公告)号：US20130320548A1
公开(公告)日：2013-12-05
申请号：US13485912
申请日：2012-05-31
CPC分类号： H01L23/3128 , H01L23/3135 , H01L23/367 , H01L23/42 , H01L2023/4056 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/15311 , H01L2924/1815 , H01L2924/3511 , H01L2224/45099
摘要： A packaged semiconductor device comprises a package substrate comprising a first package substrate contact and a second package substrate contact, and a semiconductor die over the package substrate. The semiconductor device further includes electrical connections between signal contact pads of the die and the package substrate, and a heat spreader that comprises a first heat spreader portion which is electrically connected to a first signal contact pad and the first package substrate contact and provides an electrical conduction path and a thermal conduction path. A second heat spreader portion provides an electrical conduction path between a second signal contact pad and the second package substrate contact and a thermal conduction path between the die and package substrate. An insulating layer is positioned between the first and second heat spreader portions.
摘要翻译： 封装的半导体器件包括包括第一封装衬底触点和第二封装衬底触点的封装衬底以及封装衬底上的半导体管芯。 所述半导体器件还包括在所述管芯和所述封装衬底的信号接触焊盘之间的电连接以及散热器，所述散热器包括电连接到第一信号接触焊盘的第一散热器部分和所述第一封装衬底接触并提供电 传导路径和导热路径。 第二散热器部分提供第二信号接触焊盘和第二封装衬底接触之间的导电路径以及管芯和封装衬底之间的热传导路径。 绝缘层位于第一和第二散热器部分之间。
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公开(公告)号：US09012263B1
公开(公告)日：2015-04-21
申请号：US14069103
申请日：2013-10-31
IPC分类号： H01L21/768 , H01L23/48 , H01L23/485 , H01L23/488 , H01L31/00 , H01L23/00
CPC分类号： H01L24/05 , H01L21/4864 , H01L23/3121 , H01L23/49827 , H01L23/49866 , H01L23/49894 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/85 , H01L24/92 , H01L2224/04042 , H01L2224/05599 , H01L2224/26175 , H01L2224/2919 , H01L2224/32225 , H01L2224/45099 , H01L2224/48091 , H01L2224/48228 , H01L2224/48235 , H01L2224/48465 , H01L2224/73265 , H01L2224/85011 , H01L2224/85399 , H01L2224/85447 , H01L2224/8548 , H01L2224/85484 , H01L2224/92247 , H01L2924/00014 , H01L2924/1531 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H01L2924/181 , H01L2224/48227 , H01L2924/00012 , H01L2924/00 , H01L2224/45015 , H01L2924/207
摘要： A method of making a package substrate having a copper bond pad and a location for receiving a semiconductor die having a remnant of one of a group consisting of HEDP and an HEDP derivative on a top surface of the copper bond pad. The semiconductor die is attached to the substrate. A wirebond connection is attached between the remnant and the semiconductor die.
摘要翻译： 一种制造具有铜键合焊盘的封装衬底的方法和用于接收在铜键合焊盘的顶表面上具有由HEDP和HEDP衍生物组成的组中的一种的残留物的半导体管芯的位置。 半导体管芯附着在基板上。 引线接合连接在残余物和半导体管芯之间。
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公开(公告)号：US10325876B2
公开(公告)日：2019-06-18
申请号：US14314260
申请日：2014-06-25
IPC分类号： H01L23/00 , H01L23/495 , H01L23/498 , H01L23/532
摘要： The present disclosure provides embodiments of package devices and methods for making package devices for a semiconductor die. One embodiment includes a die mounting structure having a finished bond pad that includes a copper bond pad and a cobalt-containing layer over a top surface of the copper bond pad, and a wire bond structure that is bonded to a top surface of the cobalt-containing layer of the finished bond pad, where cobalt-containing material of the cobalt-containing layer is located between a bottom surface of the wire bond structure and the top surface of the copper bond pad such that the cobalt-containing material is present under a center portion of the wire bond structure.
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公开(公告)号：US08674509B2
公开(公告)日：2014-03-18
申请号：US13485912
申请日：2012-05-31
IPC分类号： H01L23/48
CPC分类号： H01L23/3128 , H01L23/3135 , H01L23/367 , H01L23/42 , H01L2023/4056 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014 , H01L2924/15311 , H01L2924/1815 , H01L2924/3511 , H01L2224/45099
摘要： A packaged semiconductor device comprises a package substrate comprising a first package substrate contact and a second package substrate contact, and a semiconductor die over the package substrate. The semiconductor device further includes electrical connections between signal contact pads of the die and the package substrate, and a heat spreader that comprises a first heat spreader portion which is electrically connected to a first signal contact pad and the first package substrate contact and provides an electrical conduction path and a thermal conduction path. A second heat spreader portion provides an electrical conduction path between a second signal contact pad and the second package substrate contact and a thermal conduction path between the die and package substrate. An insulating layer is positioned between the first and second heat spreader portions.
摘要翻译： 封装的半导体器件包括包括第一封装衬底触点和第二封装衬底触点的封装衬底以及封装衬底上的半导体管芯。 所述半导体器件还包括在所述管芯和所述封装衬底的信号接触焊盘之间的电连接以及散热器，所述散热器包括电连接到第一信号接触焊盘的第一散热器部分和所述第一封装衬底接触并提供电 传导路径和导热路径。 第二散热器部分提供第二信号接触焊盘和第二封装衬底接触之间的导电路径以及管芯和封装衬底之间的热传导路径。 绝缘层位于第一和第二散热器部分之间。
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