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    Light-emitting diode device
    2.
    发明授权
    Light-emitting diode device 有权

    公开(公告)号：US11652193B2

    公开(公告)日：2023-05-16

    申请号：US17083329

    申请日：2020-10-29

    申请人： Lextar Electronics Corporation

    发明人： Yi-Ting Tsai ,  Hung-Chia Wang ,  Chia-Chun Hsieh ,  Hung-Chun Tong ,  Yu-Chun Lee ,  Tzong-Liang Tsai

    IPC分类号： H01L33/50

    CPC分类号： H01L33/502 ,  H01L33/508

    摘要： A light-emitting diode device is provided. First and second green conversion materials are respectively configured to convert a blue light emitted from a blue light-emitting diode to generate a first green light with a first wavelength range and a first wavelength FWHM, and a second green light with a second wavelength range and a second wavelength FWHM. The second wavelength FWHM is smaller than the first wavelength FWHM. A lower bound of the first wavelength range is smaller than a lower bound of the second wavelength range, and an upper bound of the second wavelength range is greater than an upper bound of the first wavelength range. An output light emitted from the light-emitting diode device has a spectral characteristic of less than 50% of TÜV Rheinland and more than 90% of wide color gamut.

    LIGHT EMITTING DIODE CHIP STRUCTURE AND LIGHT EMITTING DIODE ELEMENT
    4.
    发明申请
    LIGHT EMITTING DIODE CHIP STRUCTURE AND LIGHT EMITTING DIODE ELEMENT 审中-公开
    发光二极管芯片结构和发光二极管元件

    公开(公告)号：US20140197426A1

    公开(公告)日：2014-07-17

    申请号：US13856872

    申请日：2013-04-04

    申请人： LEXTAR ELECTRONICS CORPORATION

    发明人： Fu-Shin Chen ,  Li-Cheng Yang ,  Yu-Chun Lee

    IPC分类号： H01L27/15

    CPC分类号： H01L33/44 ,  H01L33/50

    摘要： A light emitting diode chip structure includes a substrate, a mesa type light emitting diode structure, and an electroluminescent layer. The mesa type light emitting diode structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The mesa type light emitting diode structure is formed on the substrate. The first semiconductor layer is formed on the substrate. The light emitting layer is formed on a portion of the first semiconductor layer, and a portion of the first semiconductor layer is uncovered. The second semiconductor layer is formed on the light emitting layer. The electroluminescent layer is formed on the second semiconductor layer. Furthermore, a light emitting diode element is also disclosed herein.

    摘要翻译： 发光二极管芯片结构包括基板，台面型发光二极管结构和电致发光层。 台面型发光二极管结构包括第一半导体层，发光层和第二半导体层。 在基板上形成台面型发光二极管结构。 第一半导体层形成在基板上。 发光层形成在第一半导体层的一部分上，第一半导体层的一部分未被覆盖。 第二半导体层形成在发光层上。 电致发光层形成在第二半导体层上。 此外，本文还公开了发光二极管元件。

    METHOD OF MANUFACTURING DISPLAY DEVICE
    5.
    发明申请
    METHOD OF MANUFACTURING DISPLAY DEVICE 有权

    公开(公告)号：US20220115257A1

    公开(公告)日：2022-04-14

    申请号：US17644792

    申请日：2021-12-17

    申请人： Lextar Electronics Corporation

    发明人： Fu-Hsin Chen ,  Yu-Chun Lee ,  Hung-Chun Tong ,  Tzong-Liang Tsai

    IPC分类号： H01L21/683 ,  H01L25/075 ,  H01L33/50 ,  H01L33/62

    摘要： A display device includes a substrate, a plurality of white light-emitting units, and a color filter layer. The white light-emitting units are arranged on the substrate at intervals, and the white light-emitting units are chip scale package (CSP). The color filter layer is above the white light-emitting units. Each of the white light-emitting units includes a light-emitting diode chip and a wavelength conversion film. The wavelength conversion film directly covers a top surface and side surfaces of the light-emitting diode chip, and the wavelength conversion film converts light emitted by the light-emitting diode chip into white light.