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公开(公告)号:US06991999B2
公开(公告)日:2006-01-31
申请号:US09948461
申请日:2001-09-07
申请人: Li Fu , Shulin Wang , Luo Lee , Steven A. Chen , Errol Sanchez
发明人: Li Fu , Shulin Wang , Luo Lee , Steven A. Chen , Errol Sanchez
IPC分类号: H01L29/04
CPC分类号: H01L21/28035 , H01L29/4925 , Y10S438/969
摘要: A bi-layer silicon electrode and its method of fabrication is described. The electrode of the present invention comprises a lower polysilicon film having a random grain microstructure, and an upper polysilicon film having a columnar grain microstructure.