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公开(公告)号:US20050202685A1
公开(公告)日:2005-09-15
申请号:US10801190
申请日:2004-03-15
申请人: Lihua Huang , Tzu-Fang Huang , Dian Sugiarto , Li-Qun Xia , Peter Lee , Hichem M'Saad , Zhenjiang Cui , Sohyun Park , Jerry Sugiarto
发明人: Lihua Huang , Tzu-Fang Huang , Dian Sugiarto , Li-Qun Xia , Peter Lee , Hichem M'Saad , Zhenjiang Cui , Sohyun Park , Jerry Sugiarto
IPC分类号: C23C16/02 , C23C16/32 , C23C16/40 , H01L21/316 , H01L21/768 , H01L21/31 , H01L21/469
CPC分类号: H01L21/31633 , C23C16/02 , C23C16/325 , C23C16/401 , H01L21/02126 , H01L21/02274 , H01L21/02304 , H01L21/76801 , H01L21/7681 , H01L21/76826 , H01L21/76832
摘要: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.
摘要翻译: 提供了用于处理用于沉积在两个低k电介质层之间具有低介电常数的粘合层的衬底的方法。 一方面,本发明提供一种处理基板的方法,包括以有机硅化合物的第一比例将有机硅化合物和氧化气体与氧化气体导入处理室,产生氧化气体的等离子体和有机硅化合物,形成 在至少包含硅和碳的阻挡层上的起始层,以有机硅化合物的第二比例将有机硅化合物和氧化气体与大于第一比例的氧化气体引入到处理室中,以及沉积与第 电介质起始层。
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公开(公告)号:US20060189162A1
公开(公告)日:2006-08-24
申请号:US11405852
申请日:2006-04-18
申请人: Lihua Huang , Tzu-Fang Huang , Dian Sugiarto , Jerry Sugiarto , Li-qun Xia , Peter Lee , Hichem M'Saad , Zhenjiang Cui , Sohyun Park
发明人: Lihua Huang , Tzu-Fang Huang , Dian Sugiarto , Jerry Sugiarto , Li-qun Xia , Peter Lee , Hichem M'Saad , Zhenjiang Cui , Sohyun Park
IPC分类号: H01L21/31 , H01L21/469
CPC分类号: H01L21/31633 , C23C16/02 , C23C16/325 , C23C16/401 , H01L21/02126 , H01L21/02274 , H01L21/02304 , H01L21/76801 , H01L21/7681 , H01L21/76826 , H01L21/76832
摘要: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.
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