公开(公告)号：US20050042885A1

公开(公告)日：2005-02-24

申请号：US10645675

申请日：2003-08-20

申请人： Lihua Li ,  Tsutomu Tanaka ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Dian Sugiarto ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

发明人： Lihua Li ,  Tsutomu Tanaka ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Dian Sugiarto ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

IPC分类号： C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31 ,  H01L21/469

CPC分类号： C23C16/5096 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.

公开(公告)号：US06911403B2

公开(公告)日：2005-06-28

申请号：US10645675

申请日：2003-08-20

申请人： Lihua Li ,  Tsutomu Tanaka ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Dian Sugiarto ,  Visweswaren Sivaramakrishnan ,  Peter Wai-Man Lee ,  Mario David Silvetti

发明人： Lihua Li ,  Tsutomu Tanaka ,  Tzu-Fang Huang ,  Li-Qun Xia ,  Dian Sugiarto ,  Visweswaren Sivaramakrishnan ,  Peter Wai-Man Lee ,  Mario David Silvetti

IPC分类号： C23C16/40 ,  C23C16/509 ,  H01L21/312 ,  H01L21/316 ,  H01L21/768 ,  H01L21/31

CPC分类号： C23C16/5096 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3122 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76801

摘要： A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.

摘要翻译： 用于在衬底上沉积有机硅酸盐层的方法包括在用于在处理室中的RF功率存在下从包含有机硅化合物的气体混合物沉积有机硅酸盐层的工艺顺序期间改变一个或多个处理条件。 在一个方面，在处理过程中，衬底与处理室中的气体分配歧管之间的距离是变化的。 优选地，沉积有机硅酸盐层的方法使等离子体对衬底的损伤最小化。

公开(公告)号：US20050078953A1

公开(公告)日：2005-04-14

申请号：US10684054

申请日：2003-10-10

申请人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

发明人： Mark Fodor ,  Sophia Velastegui ,  Soovo Sen ,  Visweswaren Sivaramakrishnan ,  Peter Lee ,  Mario Silvetti

IPC分类号： C23C16/458 ,  C23C16/46 ,  H01L21/687 ,  F26B3/30 ,  F26B19/00 ,  H01L21/20

CPC分类号： C23C16/4585 ,  C23C16/46 ,  H01L21/68735

摘要： A substrate heater assembly for supporting a substrate of a predetermined standardized diameter during processing is provided. In one embodiment, the substrate heater assembly includes a body having an upper surface, a lower surface and an embedded heating element. A substrate support surface is formed in the upper surface of the body and defines a portion of a substrate receiving pocket. An annular wall is oriented perpendicular to the upper surface and has a length of at least one half a thickness of the substrate. The wall bounds an outer perimeter of the substrate receiving pocket and has a diameter less than about 0.5 mm greater than the predetermined substrate diameter.

摘要翻译： 提供了一种用于在处理期间支撑预定标准直径的基板的基板加热器组件。 在一个实施例中，基板加热器组件包括具有上表面，下表面和嵌入式加热元件的主体。 衬底支撑表面形成在主体的上表面中并且限定衬底接收袋的一部分。 环形壁垂直于上表面定向并且具有衬底的至少一半厚度的长度。 该壁限定了基板接收槽的外周边，并具有小于预定基板直径的直径小于约0.5mm的直径。

公开(公告)号：US5935340A

公开(公告)日：1999-08-10

申请号：US747892

申请日：1996-11-13

申请人： Li-Qun Xia ,  Visweswaren Sivaramakrishnan ,  Srinivas Nemani ,  Ellie Yieh ,  Gary Fong

发明人： Li-Qun Xia ,  Visweswaren Sivaramakrishnan ,  Srinivas Nemani ,  Ellie Yieh ,  Gary Fong

IPC分类号： B08B7/00 ,  C23C16/44 ,  H01L21/00 ,  B08B6/00

CPC分类号： H01L21/67017 ,  B08B7/0035 ,  C23C16/4405

摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800.degree. C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

摘要翻译： 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高纵横比器件的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

公开(公告)号：US20050186339A1

公开(公告)日：2005-08-25

申请号：US10783316

申请日：2004-02-20

申请人： Nagarajan Rajagopalan ,  Bok Kim ,  Lester D'Cruz ,  Zhenjiang Cui ,  Girish Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

发明人： Nagarajan Rajagopalan ,  Bok Kim ,  Lester D'Cruz ,  Zhenjiang Cui ,  Girish Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

IPC分类号： C23C16/02 ,  C23C16/42 ,  C23C16/52 ,  H01L21/768 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/42

摘要： Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.

摘要翻译： 铜金属化层和电介质阻挡膜之间的粘附可以通过使通过室排气的转向管中的含硅前体的流动稳定而得到促进。 然后将稳定的气流引入处理室，以在铜上精确地形成硅化物层。 该硅化步骤产生强的Cu-Si键的网络，其防止阻挡层的分层，而基本上不改变所得金属化结构的薄层电阻和其它电性能。

公开(公告)号：US20090011148A1

公开(公告)日：2009-01-08

申请号：US12214393

申请日：2008-06-17

申请人： Nagarajan Rajagopalan ,  Bok Heon Kim ,  Lester A. D'Cruz ,  Zhenjiang Cui ,  Girish A. Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

发明人： Nagarajan Rajagopalan ,  Bok Heon Kim ,  Lester A. D'Cruz ,  Zhenjiang Cui ,  Girish A. Dixit ,  Visweswaren Sivaramakrishnan ,  Hichem M'Saad ,  Meiyee Shek ,  Li-Qun Xia

IPC分类号： C23C16/22

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/42

摘要： Adhesion between a copper metallization layer and a dielectric barrier film may be promoted by stabilizing a flow of a silicon-containing precursor in a divert line leading to the chamber exhaust. The stabilized gas flow is then introduced to the processing chamber to precisely form a silicide layer over the copper. This silicidation step creates a network of strong Cu—Si bonds that prevent delamination of the barrier layer, while not substantially altering the sheet resistance and other electrical properties of the resulting metallization structure.

摘要翻译： 铜金属化层和电介质阻挡膜之间的粘附可以通过使通过室排气的转向管中的含硅前体的流动稳定而得到促进。 然后将稳定的气流引入处理室，以在铜上精确地形成硅化物层。 该硅化步骤产生强的Cu-Si键的网络，其防止阻挡层的分层，而基本上不改变所得金属化结构的薄层电阻和其它电性能。

公开(公告)号：US06347636B1

公开(公告)日：2002-02-19

申请号：US09340602

申请日：1999-06-25

申请人： Li-Qun Xia ,  Visweswaren Sivaramakrishnan ,  Srinivas Nemani ,  Ellie Yieh ,  Gary Fong

发明人： Li-Qun Xia ,  Visweswaren Sivaramakrishnan ,  Srinivas Nemani ,  Ellie Yieh ,  Gary Fong

IPC分类号： B08B600

CPC分类号： B08B7/0035 ,  C23C16/4405 ,  H01L21/67017 ,  Y10S438/905

摘要： The present invention provides systems, methods and apparatus for high temperature (at least about 500-800° C.) processing of semiconductor wafers. The systems, methods and apparatus of the present invention allow multiple process steps to be performed in situ in the same chamber to reduce total processing time and to ensure high quality processing for high aspect ratio devices. Performing multiple process steps in the same chamber also increases the control of the process parameters and reduces device damage. In particular, the present invention can provide high temperature deposition, heating and efficient cleaning for forming dielectric films having thickness uniformity, good gap fill capability, high density, low moisture, and other desired characteristics.

摘要翻译： 本发明提供用于半导体晶片的高温（至少约500-800℃）处理的系统，方法和装置。 本发明的系统，方法和装置允许多个工艺步骤在相同的腔室中原位进行，以减少总处理时间，并确保对高宽比装置的高质量处理。 在同一个室内执行多个工艺步骤也可以增加工艺参数的控制并减少设备损坏。 特别地，本发明可以提供用于形成具有厚度均匀性，良好间隙填充能力，高密度，低湿度和其它所需特性的介电膜的高温沉积，加热和有效清洁。

公开(公告)号：US20050235916A1

公开(公告)日：2005-10-27

申请号：US10829520

申请日：2004-04-21

申请人： Eller Juco ,  Visweswaren Sivaramakrishnan ,  Mario Silvetti ,  Talex Sajoto

发明人： Eller Juco ,  Visweswaren Sivaramakrishnan ,  Mario Silvetti ,  Talex Sajoto

IPC分类号： C23C16/00 ,  C23C16/509 ,  H01J37/32

CPC分类号： H01J37/32082 ,  C23C16/5096 ,  H01J37/32183

摘要： A substrate processing system is provided with a processing chamber, an alternating voltage supply, and an impedance matching network. The processing chamber holds a substrate during processing and the alternating voltage supply is connected with the processing chamber to capacitively couple energy to a plasma formed within the processing chamber. The impedance matching network is coupled with the alternating voltage supply and has a variable resistive element and a variable reactive element, whose states respectively define distinct real and imaginary parts of an impedance.

摘要翻译： 衬底处理系统设置有处理室，交流电压源和阻抗匹配网络。 处理室在处理期间保持基板，并且交流电压供应与处理室连接以将能量电容耦合到处理室内形成的等离子体。 阻抗匹配网络与交流电源耦合，并具有可变电阻元件和可变无功元件，其状态分别定义阻抗的不同实部和虚部。

公开(公告)号：US20080017115A1

公开(公告)日：2008-01-24

申请号：US11866505

申请日：2007-10-03

申请人： Andrzej Kaszuba ,  Sophia Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario Silvetti ,  Tom Cho ,  Indrajit Lahiri ,  Surinder Bedi

发明人： Andrzej Kaszuba ,  Sophia Velastegui ,  Visweswaren Sivaramakrishnan ,  Pyongwon Yim ,  Mario Silvetti ,  Tom Cho ,  Indrajit Lahiri ,  Surinder Bedi

IPC分类号： C23C16/00

CPC分类号： H01L21/67126 ,  C23C16/4401

摘要： In one embodiment, the invention is a guard ring for reducing particle entrapment along a moveable shaft of a substrate support. In one embodiment, the guard ring comprises a substantially annular guard ring positioned within a step formed in a sleeve that circumscribes the shaft. The guard ring is positioned to substantially seal a gap separating the shaft from the sleeve, so that the amount of particles and foreign matter that travel within or become trapped in the gap is substantially reduced. In another embodiment, a guard ring comprises a base portion having an inner perimeter and an outer perimeter, a first flange coupled to the inner perimeter, a second flange coupled to the outer perimeter, and a continuous channel separating the first flange from the second flange. The first flange is adapted to function as a spring that accommodates displacement of the shaft.

摘要翻译： 在一个实施例中，本发明是用于减少沿基板支撑件的可移动轴的颗粒捕获的保护环。 在一个实施例中，保护环包括大致环形的保护环，其定位在形成在套筒内的步骤中，该套筒环绕轴。 保护环被定位成基本上密封将轴与套筒分开的间隙，使得在间隙内行进或被捕获在间隙中的颗粒和异物的量显着减少。 在另一个实施例中，保护环包括具有内周边和外周边的基部，连接到内周边的第一凸缘，联接到外周边的第二凸缘和将第一凸缘与第二凸缘分开的连续通道 。 第一凸缘适于用作容纳轴的位移的弹簧。

公开(公告)号：US20060224276A1

公开(公告)日：2006-10-05

申请号：US11424377

申请日：2006-06-15

申请人： Pyongwon Yim ,  Satish Sundar ,  Vinay Shah ,  Mario Silvetti ,  Douglas Kitajima ,  Venkatesh Babu ,  Visweswaren Sivaramakrishnan ,  Indrajit Lahiri ,  Surinder Bedi

发明人： Pyongwon Yim ,  Satish Sundar ,  Vinay Shah ,  Mario Silvetti ,  Douglas Kitajima ,  Venkatesh Babu ,  Visweswaren Sivaramakrishnan ,  Indrajit Lahiri ,  Surinder Bedi

IPC分类号： G06F19/00 ,  H01L21/306 ,  C23C16/00

CPC分类号： H01L21/67259 ,  H01L21/67766 ,  H01L21/681

摘要： A robotic positioning system that cooperates with a sensing system to correct robot motion is provided. The sensing system is decoupled from the sensors used conventionally to control the robot's motion, thereby providing repeatable detection of the robot's true position. In one embodiment, the positioning system includes a robot, a controller, a motor sensor and a decoupled sensor. The robot has at least one motor for manipulating a linkage controlling the displacement of a substrate support coupled thereto. The motor sensor is provides the controller with motor actuation information utilized to move the substrate support. The decoupled sensor provides information indicative of the true position the substrate support that may be utilized to correct the robot's motion.

摘要翻译： 提供了与传感系统配合以校正机器人运动的机器人定位系统。 感测系统与常规用于控制机器人运动的传感器解耦，从而提供机器人真实位置的可重复检测。 在一个实施例中，定位系统包括机器人，控制器，马达传感器和去耦传感器。 机器人具有至少一个用于操纵联动装置的电动机，控制联接到其上的衬底支架的位移。 马达传感器为控制器提供用于移动基板支架的马达驱动信息。 解耦传感器提供指示可用于校正机器人运动的基板支撑件的真实位置的信息。