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196 条记录 (耗时 0.032 秒)

    Control of removal profile in electrochemically assisted CMP
    1.
    发明授权
    Control of removal profile in electrochemically assisted CMP 失效
    电化学辅助CMP中去除曲线的控制

    公开(公告)号：US06991526B2

    公开(公告)日：2006-01-31

    申请号：US10244697

    申请日：2002-09-16

    申请人： Lizhong Sun ,  Liang-Yuh Chen ,  Siew Neo ,  Feng Q. Liu ,  Alain Duboust ,  Stan D. Tsai ,  Rashid Mavliev

    发明人： Lizhong Sun ,  Liang-Yuh Chen ,  Siew Neo ,  Feng Q. Liu ,  Alain Duboust ,  Stan D. Tsai ,  Rashid Mavliev

    IPC分类号： B24B1/00 ,  C25F7/00

    CPC分类号： B24B37/042 ,  B23H5/08

    摘要： Aspects of the invention generally provide a method and apparatus for polishing a substrate using electrochemical deposition techniques. In one aspect, an apparatus for polishing a substrate comprises a counter-electrode and a pad positioned between a substrate and the counter-electrode and a pad positioned between a substrate and the counter-electrode. A dielectric insert is positioned between the counter-electrode and the substrate. The dielectric insert has a plurality of zones, each zone permitting a separate current density between the counter-electrode and the substrate. In another embodiment, an apparatus for polishing a substrate that include a conductive layer comprises a counter-electrode to the material layer. The counter-electrode comprises a plurality of electrically isolated conductive elements. An electrical connector is separately coupled to each of the conductive elements.

    摘要翻译： 本发明的各方面通常提供使用电化学沉积技术来抛光衬底的方法和装置。 一方面，用于研磨衬底的装置包括对电极和位于衬底和对电极之间的衬垫以及位于衬底和对电极之间的衬垫。 电介质插入件位于对电极和衬底之间。 电介质插入件具有多个区域，每个区域允许在对电极和衬底之间分开的电流密度。 在另一个实施例中，用于抛光包括导电层的衬底的装置包括与材料层相对的对电极。 对电极包括多个电绝缘的导电元件。 电连接器分别耦合到每个导电元件。

    Method for chemical mechanical polishing of semiconductor substrates
    9.
    发明授权
    Method for chemical mechanical polishing of semiconductor substrates 失效
    半导体衬底的化学机械抛光方法

    公开(公告)号：US06821881B2

    公开(公告)日：2004-11-23

    申请号：US10199444

    申请日：2002-07-19

    申请人： Stan D. Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Q. Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel A. Carl

    发明人： Stan D. Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Q. Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel A. Carl

    IPC分类号： H01L214763

    CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

    摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

    摘要翻译： 提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。 在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。 抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。 磨料的百分比。 抛光工艺可以集成到多步抛光工艺中。