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74 条记录 (耗时 0.028 秒)

    Tantalum removal during chemical mechanical polishing
    1.
    发明授权
    Tantalum removal during chemical mechanical polishing 失效

    公开(公告)号：US07012025B2

    公开(公告)日：2006-03-14

    申请号：US09755717

    申请日：2001-01-05

    申请人： Lizhong Sun ,  Stan D. Tsai ,  Shijian Li ,  Feng Liu

    发明人： Lizhong Sun ,  Stan D. Tsai ,  Shijian Li ,  Feng Liu

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3212 ,  C09G1/02

    摘要： The invention relates generally to a composition and a method for selective removal of a barrier layer in chemical mechanical polishing. In one aspect, the composition for selective removal of a barrier layer includes at least one reducing agent, ions from at least one transitional metal, and water. The composition may further include at least one buffer for pH stability, at least one pH adjusting agent for providing an initial pH, a corrosion inhibitor, abrasive particles, and/or a metal chelating agent. In another embodiment, the invention relates generally to a composition and a method for removal of a conductive material layer and a barrier layer in chemical mechanical polishing. In one aspect, the method for removal of a conductive material layer and a barrier layer includes applying a conductive-material-layer-selective composition to a polishing pad, polishing the substrate in presence of the conductive-material-layer-selective composition, applying a barrier-layer-selective composition to a polishing pad, and polishing the substrate in presence of the barrier-layer-selective composition.

    Solution to metal re-deposition during substrate planarization
    3.
    发明授权
    Solution to metal re-deposition during substrate planarization 失效
    在衬底平面化期间金属再沉积的解决方案

    公开(公告)号：US06653242B1

    公开(公告)日：2003-11-25

    申请号：US09608078

    申请日：2000-06-30

    申请人： Lizhong Sun ,  Stan D Tsai ,  Shijian Li ,  John M White

    发明人： Lizhong Sun ,  Stan D Tsai ,  Shijian Li ,  John M White

    IPC分类号： H01L21302

    CPC分类号： H01L21/3212 ,  C09G1/04

    摘要： A method and composition for planarizing a substrate. The composition includes one or more surfactants, including one or more anionic surfactants, Zweitter-ionic surfactants, dispersers, or combinations thereof, one or more chelating agents, one or more oxidizers, one or more corrosion inhibitors, and deionized water. The composition may further comprise one or more agents to adjust the pH and/or abrasive particles. The method comprises planarizing a substrate using a composition including one or more surfactants of anionic surfactants, Zweitter-ionic surfactants, or combinations thereof.

    摘要翻译： 一种用于平坦化衬底的方法和组合物。 组合物包括一种或多种表面活性剂，包括一种或多种阴离子表面活性剂，Zweitter离子表面活性剂，分散剂或其组合，一种或多种螯合剂，一种或多种氧化剂，一种或多种腐蚀抑制剂和去离子水。 组合物还可以包含一种或多种调节pH和/或磨料颗粒的试剂。 该方法包括使用包含一种或多种阴离子表面活性剂，Zweitter离子型表面活性剂或其组合的表面活性剂的组合物平面化底物。

    Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform
    4.
    发明授权
    Electro-chemical plating with reduced thickness and integration with chemical mechanical polisher into a single platform 失效
    电化学镀层减薄，并与化学机械抛光机整合成单个平台

    公开(公告)号：US06613200B2

    公开(公告)日：2003-09-02

    申请号：US09770559

    申请日：2001-01-26

    申请人： Shijian Li ,  Stan D. Tsai ,  Lizhong Sun

    发明人： Shijian Li ,  Stan D. Tsai ,  Lizhong Sun

    IPC分类号： C25D1700

    CPC分类号： B24B37/32 ,  B24B37/046 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/3212

    摘要： An apparatus is provided for depositing and polishing a material layer on a substrate. In one embodiment, an apparatus is provided which includes a basin, a cover, a permeable disc, an anode and a polishing head. The permeable disc is disposed in the basin between the cover and the basin's bottom. The cover has an aperture disposed therein that includes a plurality of pins. The pins extend radially into the aperture and are adapted to support the substrate. The anode is disposed in the basin between the disc and the bottom of the basin. The polishing head is adapted to retain the substrate during processing and includes a retaining ring. The retaining ring has a plurality of grooves disposed therein that mate with the pins when the polishing head is disposed in the aperture. When the substrate is biased via the pins, the potential between the substrate and the anode causes material to be deposited on the substrate's surface.

    摘要翻译： 提供了一种用于在衬底上沉积和抛光材料层的装置。 在一个实施例中，提供了一种装置，其包括盆，盖，可渗透盘，阳极和抛光头。 可渗透盘设置在盖和盆底之间的盆中。 盖具有设置在其中的孔，其包括多个销。 销钉径向延伸到孔中并且适于支撑基底。 阳极设置在圆盘和盆底之间的盆中。 抛光头适于在加工过程中保持基底并且包括保持环。 保持环具有设置在其中的多个槽，当抛光头设置在孔中时与该销相配合。 当衬底经由引脚偏置时，衬底和阳极之间的电势使材料沉积在衬底的表面上。

    Method for chemical mechanical polishing of semiconductor substrates
    7.
    发明授权
    Method for chemical mechanical polishing of semiconductor substrates 失效
    半导体衬底的化学机械抛光方法

    公开(公告)号：US06821881B2

    公开(公告)日：2004-11-23

    申请号：US10199444

    申请日：2002-07-19

    申请人： Stan D. Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Q. Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel A. Carl

    发明人： Stan D. Tsai ,  Liang-Yuh Chen ,  Lizhong Sun ,  Shijian Li ,  Feng Q. Liu ,  Rashid Mavliev ,  Ratson Morad ,  Daniel A. Carl

    IPC分类号： H01L214763

    CPC分类号： H01L21/7684 ,  B24B37/042 ,  B24B49/16 ,  H01L21/3212 ,  Y02P80/30

    摘要： Methods and apparatus for processing substrates to improve polishing uniformity, improve planarization, remove residual material and minimize defect formation are provided. In one aspect, a method is provided for processing a substrate having a conductive material and a low dielectric constant material disposed thereon including polishing a substrate at a polishing pressures of about 2 psi or less and at platen rotational speeds of about 200 cps or greater. The polishing process may use an abrasive-containing polishing composition having up to about 1 wt. % of abrasives. The polishing process may be integrated into a multi-step polishing process.

    摘要翻译： 提供了用于处理基板以改善抛光均匀性，改善平面化，去除残留材料并最小化缺陷形成的方法和装置。 在一个方面，提供了一种用于处理具有导电材料和设置在其上的低介电常数材料的衬底的方法，其包括在约2psi或更小的抛光压力和约200cps或更高的压板旋转速度下抛光衬底。 抛光工艺可以使用含有至多约1重量％的磨料的抛光组合物。 磨料的百分比。 抛光工艺可以集成到多步抛光工艺中。