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公开(公告)号：US07767977B1
公开(公告)日：2010-08-03
申请号：US12417929
申请日：2009-04-03
CPC分类号： H01J37/08 , H01J27/024 , H01J37/09 , H01J2237/0451 , H01J2237/0453 , H01J2237/0456 , H01J2237/065 , H01J2237/08 , H01J2237/083 , H01J2237/31 , H01J2237/31701 , Y10S438/961
摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator. The plasma sheath modulator is configured to control a shape of a boundary between plasma and a plasma sheath proximate the extraction aperture. The plasma sheath modulator may include a pair of insulators positioned in the arc chamber and spaced apart by a gap positioned proximate the extraction aperture. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
摘要翻译： 离子源包括具有提取孔的电弧室和等离子体鞘调制器。 等离子体鞘调制器被配置为控制等离子体和靠近提取孔的等离子体鞘之间的边界的形状。 等离子体鞘调制器可以包括位于电弧室中的一对绝缘体，并且间隔开位于靠近提取孔的间隙。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。
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公开(公告)号：US20120111834A1
公开(公告)日：2012-05-10
申请号：US13353993
申请日：2012-01-19
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen for supporting a workpiece, a source configured to generate a plasma in the process chamber, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译： 等离子体处理装置包括处理室，用于支撑工件的压板，被配置为在处理室中产生等离子体的源和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。
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公开(公告)号：US20100255665A1
公开(公告)日：2010-10-07
申请号：US12644103
申请日：2009-12-22
IPC分类号： H01L21/26 , C23F1/00 , C23C16/00 , H01L21/3065
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。
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公开(公告)号：US08101510B2
公开(公告)日：2012-01-24
申请号：US12644103
申请日：2009-12-22
IPC分类号： H01L21/26 , H01L21/3065 , C23F1/00 , C23C16/00
CPC分类号： H01J37/32623 , C23C14/48
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulating modifier has a gap, and a gap plane, where the gap plane is defined by portions of the insulating modifier closest to the sheath and proximate the gap. A gap angle is defined as the angle between the gap plane and a plane defined by the front surface of the workpiece. Additionally, a method of having ions strike a workpiece is disclosed, where the range of incident angles of the ions striking the workpiece includes a center angle and an angular distribution, and where the use of the insulating modifier creates a center angle that is not perpendicular to the workpiece.
摘要翻译： 等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。 绝缘改性剂具有间隙和间隙平面，其中间隙平面由最接近护套并靠近间隙的绝缘改性物的部分限定。 间隙角定义为间隙平面与由工件的前表面限定的平面之间的角度。 另外，公开了一种具有离子冲击工件的方法，其中撞击工件的离子的入射角的范围包括中心角和角分布，并且其中使用绝缘改性剂产生不垂直的中心角 到工件。
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5.发明授权公开(公告)号：US09024273B2
公开(公告)日：2015-05-05
申请号：US12763652
申请日：2010-04-20
IPC分类号： H01J37/08 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/08
摘要： An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species is ionized in an ion source. The first species ions and/or first species combine to form molecular ions. These molecular ions may be transported to a second chamber, which may be an arc chamber or diffusion chamber, and are extracted. The molecular ions may have a larger atomic mass than the first species or first species ions. A second species also may be ionized with the first species to form molecular ions. In one instance, the first and second species are both molecules.
摘要翻译： 公开了一种产生分子离子的装置和产生分子离子的方法。 至少第一种在离子源中离子化。 第一种离子和/或第一种结合形成分子离子。 这些分子离子可以被输送到可以是电弧室或扩散室的第二室，并被提取。 分子离子可以具有比第一种或第一种离子更大的原子质量。 第二种也可以用第一种离子化形成分子离子。 在一种情况下，第一种和第二种都是分子。
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公开(公告)号：US08742373B2
公开(公告)日：2014-06-03
申请号：US12965419
申请日：2010-12-10
IPC分类号： H01J37/32
CPC分类号： H01J37/32412 , C23C14/06 , C23C14/345 , C23C14/3485 , C23C14/48 , C23C14/54 , H01J37/08 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32449 , H01J37/32623 , H01J2237/08 , H01J2237/0815 , H01J2237/0827 , H01J2237/31701
摘要： A plasma is formed from one or more gases in a plasma chamber using at least a first power and a second power. A first ion species is generated at said first power and a second ion species is generated at said second power. In one embodiment, the first ion species and second ion species are implanted into a workpiece at two different energies using at least a first bias voltage and a second bias voltage. This may enable implantation to two different depths. These ion species may be atomic ions or molecular ions. The molecular ions may be larger than the gases used to form the plasma.
摘要翻译： 使用至少第一功率和第二功率在等离子体室中的一种或多种气体形成等离子体。 在所述第一功率下产生第一离子种类，并且在所述第二功率下产生第二离子种类。 在一个实施例中，使用至少第一偏置电压和第二偏置电压将第一离子种类和第二离子种类以两种不同的能量注入到工件中。 这可以使植入到两个不同的深度。 这些离子种类可以是原子离子或分子离子。 分子离子可能大于用于形成等离子体的气体。
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公开(公告)号：US20110253902A1
公开(公告)日：2011-10-20
申请号：US12763652
申请日：2010-04-20
IPC分类号： H01J27/02
CPC分类号： H01J37/3171 , H01J37/08
摘要： An apparatus that generates molecular ions and methods to generate molecular ions are disclosed. At least a first species is ionized in an ion source. The first species ions and/or first species combine to form molecular ions. These molecular ions may be transported to a second chamber, which may be an arc chamber or diffusion chamber, and are extracted. The molecular ions may have a larger atomic mass than the first species or first species ions. A second species also may be ionized with the first species to form molecular ions. In one instance, the first and second species are both molecules.
摘要翻译： 公开了一种产生分子离子的装置和产生分子离子的方法。 至少第一种在离子源中离子化。 第一种离子和/或第一种结合形成分子离子。 这些分子离子可以被输送到可以是电弧室或扩散室的第二室，并被提取。 分子离子可以具有比第一种或第一种离子更大的原子质量。 第二种也可以用第一种离子化形成分子离子。 在一种情况下，第一种和第二种都是分子。
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公开(公告)号：US08188445B2
公开(公告)日：2012-05-29
申请号：US12848354
申请日：2010-08-02
CPC分类号： H01J27/08 , H01J37/08 , H01J37/3171 , H01J2237/083 , H01J2237/0835 , Y10S438/961
摘要： An ion source includes an arc chamber having an extraction aperture, and a plasma sheath modulator positioned in the arc chamber. The plasma sheath modulator is configured to control a shape of a boundary between a plasma and a plasma sheath proximate the extraction aperture, wherein the plasma sheath modulator includes a semiconductor. A well focused ion beam having a high current density can be generated by the ion source. A high current density ion beam can improve the throughput of an associated process. The emittance of the ion beam can also be controlled.
摘要翻译： 离子源包括具有提取孔的电弧室和位于电弧室中的等离子体鞘调制器。 等离子体鞘调制器被配置为控制靠近提取孔的等离子体和等离子体鞘之间的边界的形状，其中等离子体鞘调制器包括半导体。 可以通过离子源产生具有高电流密度的良好聚焦的离子束。 高电流密度离子束可以提高相关过程的吞吐量。 也可以控制离子束的发射。
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9.发明申请METHOD AND SYSTEM FOR MODIFYING SUBSTRATE RELIEF FEATURES USING ION IMPLANTION 有权使用离子注入修饰衬底缓冲特征的方法和系统公开(公告)号：US20110223546A1
公开(公告)日：2011-09-15
申请号：US13046136
申请日：2011-03-11
CPC分类号： H01J37/317 , G03F7/40 , H01J37/3171 , H01J37/3174 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01L21/0273 , H01L21/2236 , H01L21/263 , H01L21/265 , H01L29/66787
摘要： A method of treating resist features comprises positioning, in a process chamber, a substrate having a set of patterned resist features on a first side of the substrate and generating a plasma in the process chamber having a plasma sheath adjacent to the first side of the substrate. The method may further comprise modifying a shape of a boundary between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the substrate facing the plasma, wherein ions from the plasma impinge on the patterned resist features over a wide angular range during a first exposure.
摘要翻译： 一种处理抗蚀剂特征的方法包括在处理室中将在衬底的第一侧上具有一组图案化的抗蚀剂特征的衬底定位，并且在处理室中产生等离子体，其具有与衬底的第一侧相邻的等离子体鞘 。 该方法可以进一步包括用等离子体护套改性剂修改等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由衬底面向等离子体的前表面限定的平面 其中来自等离子体的离子在第一曝光期间在宽的角度范围内撞击在图案化的抗蚀剂特征上。
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公开(公告)号：US20110124186A1
公开(公告)日：2011-05-26
申请号：US12947078
申请日：2010-11-16
申请人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
发明人： Anthony Renau , Ludovic Godet , Timothy J. Miller , Joseph C. Olson , Vikram Singh , James Buonodono , Frank Sinclair , Deepak A. Ramappa , Russell Low , Atul Gupta , Kevin M. Daniels
IPC分类号： H01L21/265 , G21K5/10
CPC分类号： B01J19/081 , H01J37/3171 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01J2237/0453 , H01J2237/1205 , H01L21/2236 , H01L31/022425 , H01L31/068 , H01L31/08 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
摘要翻译： 等离子体处理装置包括等离子体源，其被配置为在等离子体室中产生等离子体，使得等离子体包含用于注入工件的离子。 该装置还包括聚焦板装置，该聚焦板装置具有孔结构，其被配置为修改离开聚焦板附近的等离子体鞘的等离子体鞘的形状，使得离开孔结构的孔的离子限定聚焦离子。 该设备还包括处理室，其包含与聚焦板间隔开的工件，使得在工件处的聚焦离子的固定注入区域基本上比孔更窄。 该装置被配置为通过在离子注入期间扫描工件来在工件中产生多个图案化区域。
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