-
公开(公告)号:US20230352384A1
公开(公告)日:2023-11-02
申请号:US18188622
申请日:2023-03-23
发明人: Wei SHI , Mikhail DOLGANOV , Steve CHEUNG , Lijun ZHU
IPC分类号: H01L23/498 , H05K3/46 , H05K1/11 , H05K1/03 , H05K1/16
CPC分类号: H01L23/49822 , H05K1/0306 , H05K1/115 , H05K1/162 , H05K3/4688 , H05K2201/0187 , H05K2201/09563
摘要: In some implementations, a substrate comprises a ceramic core, multiple metal-filled vias through the ceramic core, and a first metal layer, on a top side of the ceramic core, including metal traces, over respective metal-filled vias. The substrate comprises a second metal layer, including a first electrical contact over a first metal trace, a second electrical contact over a second metal trace, and a third electrical contact over a third metal trace, where the second metal trace is electrically isolated from the first and third metal traces. The substrate comprises a thin dielectric layer separating the first metal layer and the second metal layer. The dielectric layer between the first metal layer and the second layer provides the substrate with a low parasitic inductance and a low thermal resistance based on a thickness of the dielectric layer and/or a material used for the dielectric layer.