摘要:
Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).
摘要:
Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).
摘要翻译:通常公开了AlInGaN / InGaN / GaN MOS-DHFET的高频(亚微米栅极长度)操作和由制造方法产生的HFET器件的制造方法。 形成HFET器件的方法通常包括新颖的双凹槽蚀刻和作为有源栅绝缘体的超薄,高质量二氧化硅层的脉冲沉积。 本发明的方法可用于形成任何合适的场效应晶体管(FET),并且特别适于形成高电子迁移率晶体管(HEMT)。
摘要:
An ultraviolet light emitting semiconductor chip, its use in a LED, and methods of its fabrication are disclosed. The semiconductor chip can include a buffer layer of AlxGa1-xN, where 0
摘要翻译:公开了一种紫外光发射半导体芯片,其在LED中的应用及其制造方法。 该半导体芯片可以包括Al x Ga 1-x N的缓冲层,其中0
摘要:
Methods of achieving high breakdown voltages in semiconductor devices by suppressing the surface flashover using high dielectric strength insulating encapsulation material are generally described. In one embodiment of the present invention, surface flashover in AlGaN/GaN heterostructure field-effect transistors (HFETs) is suppressed by using high dielectric strength insulating encapsulation material. Surface flashover in as-fabricated III-Nitride based HFETs limits the operating voltages at levels well below the breakdown voltages of GaN.
摘要:
Methods of achieving high breakdown voltages in semiconductor devices by suppressing the surface flashover using high dielectric strength insulating encapsulation material are generally described. In one embodiment of the present invention, surface flashover in AlGaN/GaN heterostructure field-effect transistors (HFETs) is suppressed by using high dielectric strength insulating encapsulation material. Surface flashover in as-fabricated III-Nitride based HFETs limits the operating voltages at levels well below the breakdown voltages of GaN.
摘要:
Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).
摘要翻译:通常公开了AlInGaN / InGaN / GaN MOS-DHFET的高频(亚微米栅极长度)操作和由制造方法产生的HFET器件的制造方法。 形成HFET器件的方法通常包括新颖的双凹槽蚀刻和作为有源栅绝缘体的超薄,高质量二氧化硅层的脉冲沉积。 本发明的方法可用于形成任何合适的场效应晶体管(FET),并且特别适于形成高电子迁移率晶体管(HEMT)。
摘要:
An epitaxy procedure for growing extremely low defect density non-polar and semi-polar III-nitride layers over a base layer, and the resulting structures, is generally described. In particular, a pulsed selective area lateral overgrowth of a group III nitride layer can be achieved on a non-polar and semi-polar base layer. By utilizing the novel P-MOCVD or PALE and lateral over growth over selected area, very high lateral growth conditions can be achieved at relatively lower growth temperature which does not affect the III-N surfaces.
摘要:
An epitaxy procedure for growing extremely low defect density non-polar and semi-polar III-nitride layers over a base layer, and the resulting structures, is generally described. In particular, a pulsed selective area lateral overgrowth of a group III nitride layer can be achieved on a non-polar and semi-polar base layer. By utilizing the novel P-MOCVD or PALE and lateral over growth over selected area, very high lateral growth conditions can be achieved at relatively lower growth temperature which does not affect the III-N surfaces.
摘要:
Fabrication methods of a high frequency (sub-micron gate length) operation of AlInGaN/InGaN/GaN MOS-DHFET, and the HFET device resulting from the fabrication methods, are generally disclosed. The method of forming the HFET device generally includes a novel double-recess etching and a pulsed deposition of an ultra-thin, high-quality silicon dioxide layer as the active gate-insulator. The methods of the present invention can be utilized to form any suitable field effect transistor (FET), and are particular suited for forming high electron mobility transistors (HEMT).
摘要翻译:通常公开了AlInGaN / InGaN / GaN MOS-DHFET的高频(亚微米栅极长度)操作和由制造方法产生的HFET器件的制造方法。 形成HFET器件的方法通常包括新颖的双凹槽蚀刻和作为有源栅绝缘体的超薄,高质量二氧化硅层的脉冲沉积。 本发明的方法可用于形成任何合适的场效应晶体管(FET),并且特别适于形成高电子迁移率晶体管(HEMT)。
摘要:
An ultraviolet light emitting semiconductor chip, its use in a LED, and methods of its fabrication are disclosed. The semiconductor chip can include a buffer layer of AlxGa1-xN, where 0
摘要翻译:公开了一种紫外光发射半导体芯片,其在LED中的应用及其制造方法。 半导体芯片可以包括Al x Ga 1-x N的缓冲层,其中0