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公开(公告)号：US10541323B2
公开(公告)日：2020-01-21
申请号：US15223614
申请日：2016-07-29
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Timothy E. Boles , Douglas Carlson , Anthony Kaleta
IPC: H01L29/15 , H01L31/0256 , H01L29/778 , H01L29/423 , H01L29/51 , H01L29/06 , H01L29/40 , H01L29/66 , H01L29/205 , H01L29/47 , H01L29/417 , H01L29/20
Abstract: High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, gate-connected field plate, and source-connected field plate.
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公开(公告)号：US20240105857A9
公开(公告)日：2024-03-28
申请号：US17211116
申请日：2021-03-24
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Timothy E. Boles , Douglas Carlson , Anthony Kaleta
IPC: H01L29/872 , H01L21/761 , H01L29/06 , H01L29/20 , H01L29/205 , H01L29/40 , H01L29/66 , H01L29/778 , H01L29/861 , H02M7/00
CPC classification number: H01L29/872 , H01L21/761 , H01L29/0646 , H01L29/0649 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/404 , H01L29/66143 , H01L29/66212 , H01L29/7786 , H01L29/861 , H02M7/003
Abstract: High-voltage Schottky diodes are described. The diodes are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. In one example, a Schottky diode includes a conduction layer, a first layer over the conduction layer, a second layer over the first layer, a first cathode and a second cathode spaced apart and in electrical contact with the conduction layer, and an anode over the second layer between the first cathode and the second cathode. The first cathode and the second cathode can be electrically connected to each other as a cathode of the Schottky diode.
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公开(公告)号：US20170301780A1
公开(公告)日：2017-10-19
申请号：US15223734
申请日：2016-07-29
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Timothy E. Boles , Douglas Carlson , Anthony Kaleta
IPC: H01L29/778 , H01L29/423 , H01L29/40 , H01L29/20 , H01L29/66 , H01L29/06
CPC classification number: H01L29/7786 , H01L29/0653 , H01L29/2003 , H01L29/205 , H01L29/401 , H01L29/402 , H01L29/404 , H01L29/41758 , H01L29/41766 , H01L29/42312 , H01L29/42316 , H01L29/42376 , H01L29/475 , H01L29/517 , H01L29/66462 , H01L29/7787
Abstract: High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, a thin insulating layer formed beneath the gate, a gate-connected field plate, and a source-connected field plate.
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公开(公告)号：US11923462B2
公开(公告)日：2024-03-05
申请号：US17211116
申请日：2021-03-24
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Timothy E. Boles , Douglas Carlson , Anthony Kaleta
IPC: H01L29/872 , H01L21/761 , H01L29/06 , H01L29/20 , H01L29/205 , H01L29/40 , H01L29/66 , H01L29/778 , H01L29/861 , H02M7/00
CPC classification number: H01L29/872 , H01L21/761 , H01L29/0646 , H01L29/0649 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/404 , H01L29/66143 , H01L29/66212 , H01L29/7786 , H01L29/861 , H02M7/003
Abstract: Various aspects of Schottky diodes are described. The diodes are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter in some cases among other aspects. In one example, a Schottky diode includes a conduction layer, a first layer over the conduction layer, a second layer over the first layer, a first cathode and a second cathode spaced apart and in electrical contact with the conduction layer, and an anode over the second layer between the first cathode and the second cathode. The first cathode and the second cathode can be electrically connected to each other as a cathode of the Schottky diode.
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公开(公告)号：US10985284B2
公开(公告)日：2021-04-20
申请号：US15223677
申请日：2016-07-29
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Timothy E. Boles , Douglas Carlson , Anthony Kaleta
IPC: H01L29/872 , H01L29/66 , H01L29/40 , H01L29/778 , H01L29/861 , H01L29/06 , H01L29/20 , H01L21/761 , H01L29/205 , H02M7/00
Abstract: High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.
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公开(公告)号：US20190341480A1
公开(公告)日：2019-11-07
申请号：US16199408
申请日：2018-11-26
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Timothy E. Boles , Douglas Carlson , Anthony Kaleta
IPC: H01L29/778 , H01L29/51 , H01L29/40 , H01L29/423 , H01L29/205 , H01L29/66 , H01L29/06 , H01L29/47
Abstract: High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, a thin insulating layer formed beneath the gate, a gate-connected field plate, and a source-connected field plate.
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公开(公告)号：US20180358221A1
公开(公告)日：2018-12-13
申请号：US15616699
申请日：2017-06-07
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Douglas Carlson , Timothy E. Boles
IPC: H01L21/02 , H01L29/20 , H01L33/00 , H01L33/32 , C30B29/40 , C30B25/18 , H01S5/24 , H01S5/02 , H01S5/323
CPC classification number: H01L21/0243 , C30B25/183 , C30B29/406 , H01L21/02378 , H01L21/02381 , H01L21/0242 , H01L21/02499 , H01L21/0254 , H01L21/02592 , H01L21/02595 , H01L21/02598 , H01L29/2003 , H01L33/007 , H01L33/32 , H01S5/0205 , H01S5/0206 , H01S5/24 , H01S5/32341 , H01S2301/173
Abstract: Structures and methods for reducing wafer bow during heteroepitaxial growth are described. Micro-trenches may be formed across a surface of a substrate and filled with polycrystalline material. Stress-relieving regions of material can be grown over the polycrystalline material in a layer of semiconductor material during heteroepitaxy.
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公开(公告)号：US20170301798A1
公开(公告)日：2017-10-19
申请号：US15223455
申请日：2016-07-29
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Anthony Kaleta , Douglas Carlson , Timothy E. Boles
IPC: H01L29/872 , H01L29/66 , H01L29/205 , H01L21/761 , H01L29/20 , H01L29/06 , H02M7/00 , H01L29/40
CPC classification number: H01L29/872 , H01L21/761 , H01L29/0646 , H01L29/0649 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/404 , H01L29/66143 , H01L29/66212 , H02M7/003
Abstract: High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.
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公开(公告)号：US20170301781A1
公开(公告)日：2017-10-19
申请号：US15223614
申请日：2016-07-29
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Timothy E. Boles , Douglas Carlson , Anthony Kaleta
IPC: H01L29/778 , H01L29/40 , H01L29/20 , H01L29/205 , H01L29/47 , H01L29/423
Abstract: High-voltage, gallium-nitride HEMTs are described that are capable of withstanding reverse-bias voltages of at least 900 V and, in some cases, in excess of 2000 V with low reverse-bias leakage current. A HEMT may comprise a lateral geometry having a gate, gate-connected field plate, and source-connected field plate.
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公开(公告)号：US20230207558A1
公开(公告)日：2023-06-29
申请号：US18170794
申请日：2023-02-17
Applicant: MACOM Technology Solutions Holdings, Inc.
Inventor： Douglas Carlson , Timothy E. Boles , Wayne Mack Struble
IPC: H01L27/06 , H01L21/762 , H01L21/8258 , H01L23/66
CPC classification number: H01L27/0629 , H01L21/8258 , H01L21/76224 , H01L23/66 , H01L27/0605 , H01L2223/6672 , H01L2223/6683
Abstract: Various methods of forming integrated circuits formed using gallium nitride and other materials are described. An example method includes forming a first integrated device over a first semiconductor structure in a first region of the integrated circuit, forming a second integrated device over a second semiconductor structure in a second region of the integrated circuit, etching a cavity in a third region of the of the integrated circuit located between the first region and the second region, filling the cavity with an insulating material, and forming a passive component over the insulating material in the third region of the integrated circuit. In other aspects, the method can include grinding a back side of a semiconductor substrate of the integrated circuit to electrically isolate the first semiconductor structure from the second semiconductor structure and, after the grinding, forming a ground plane over the back side of the semiconductor substrate.
