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    THREE-DIMENSIONAL IMAGING USING ELECTRON BEAM ACTIVATED CHEMICAL ETCH
    1.
    发明申请
    THREE-DIMENSIONAL IMAGING USING ELECTRON BEAM ACTIVATED CHEMICAL ETCH 失效
    使用电子束激活化学蚀刻的三维成像

    公开(公告)号：US20070158562A1

    公开(公告)日：2007-07-12

    申请号：US11622758

    申请日：2007-01-12

    申请人： MEHRAN NASSER-GHODSI ,  Tzu-Chin Chuang ,  Kenneth Krzeczowski ,  Matthew Lent ,  Chris Huang ,  Stanislaw Borowicz

    发明人： MEHRAN NASSER-GHODSI ,  Tzu-Chin Chuang ,  Kenneth Krzeczowski ,  Matthew Lent ,  Chris Huang ,  Stanislaw Borowicz

    IPC分类号： G21K7/00

    CPC分类号： H01J37/28 ,  H01J2237/226 ,  H01J2237/2611 ,  H01J2237/3174

    摘要： Methods and apparatus for imaging a structure and a related processor-readable medium are disclosed. A surface of a substrate (or a portion thereof) is exposed to a gas composition. The gas composition includes one or more components that etch the substrate upon activation by interaction with a beam of electrons. A beam of electrons is directed to one or more portions of the surface of the substrate that are exposed to the gas composition to etch the one or more portions. A plurality of images is obtained of the one or more portions at different instances of time as the one or more portions are etched. A three-dimensional model of one or more structures embedded within the one or more portions of the substrate is generated from the plurality of images.

    摘要翻译： 公开了用于对结构进行成像和相关处理器可读介质的方法和装置。 将基材（或其一部分）的表面暴露于气体组合物。 气体组合物包括一种或多种在通过与电子束的相互作用激活时蚀刻衬底的组分。 电子束被引导到暴露于气体组合物的衬底的表面的一个或多个部分以蚀刻一个或多个部分。 当蚀刻一个或多个部分时，在不同的时间点获得一个或多个部分的多个图像。 从多个图像生成嵌入在基板的一个或多个部分内的一个或多个结构的三维模型。

    Three-dimensional imaging using electron beam activated chemical etch
    4.
    发明授权
    Three-dimensional imaging using electron beam activated chemical etch 失效
    使用电子束激活化学蚀刻的三维成像

    公开(公告)号：US07709792B2

    公开(公告)日：2010-05-04

    申请号：US11622758

    申请日：2007-01-12

    申请人： Mehran Naser-Ghodsi ,  Tzu-Chin Chuang ,  Kenneth Krzeczowski ,  Matthew Lent ,  Chris Huang ,  Stanislaw Marek Borowicz

    发明人： Mehran Naser-Ghodsi ,  Tzu-Chin Chuang ,  Kenneth Krzeczowski ,  Matthew Lent ,  Chris Huang ,  Stanislaw Marek Borowicz

    IPC分类号： H01J37/28 ,  H01J37/305 ,  G01N23/225

    CPC分类号： H01J37/28 ,  H01J2237/226 ,  H01J2237/2611 ,  H01J2237/3174

    摘要： Methods and apparatus for imaging a structure and a related processor-readable medium are disclosed. A surface of a substrate (or a portion thereof) is exposed to a gas composition. The gas composition includes one or more components that etch the substrate upon activation by interaction with a beam of electrons. A beam of electrons is directed to one or more portions of the surface of the substrate that are exposed to the gas composition to etch the one or more portions. A plurality of images is obtained of the one or more portions at different instances of time as the one or more portions are etched. A three-dimensional model of one or more structures embedded within the one or more portions of the substrate is generated from the plurality of images.

    摘要翻译： 公开了用于对结构进行成像和相关处理器可读介质的方法和装置。 将基材（或其一部分）的表面暴露于气体组合物。 气体组合物包括一种或多种在通过与电子束的相互作用激活时蚀刻衬底的组分。 电子束被引导到暴露于气体组合物的衬底的表面的一个或多个部分以蚀刻一个或多个部分。 当蚀刻一个或多个部分时，在不同的时间点获得一个或多个部分的多个图像。 从多个图像生成嵌入在基板的一个或多个部分内的一个或多个结构的三维模型。

    Sharp scattering angle trap for electron beam apparatus
    5.
    发明授权
    Sharp scattering angle trap for electron beam apparatus 有权
    用于电子束装置的夏普散射角捕获器

    公开(公告)号：US08890066B1

    公开(公告)日：2014-11-18

    申请号：US11265811

    申请日：2005-11-03

    申请人： Yehiel Gotkis ,  Garrett Pickard ,  Stanislaw Marek Borowicz ,  Tzu-Chin Chuang ,  Mehran Nasser-Ghodsi

    发明人： Yehiel Gotkis ,  Garrett Pickard ,  Stanislaw Marek Borowicz ,  Tzu-Chin Chuang ,  Mehran Nasser-Ghodsi

    IPC分类号： G21K5/04

    CPC分类号： H01J37/244 ,  H01J37/28 ,  H01J2237/028

    摘要： One embodiment relates to an electron beam apparatus. The apparatus includes a source for generating an incident electron beam, an electron lens for focusing the incident electron beam so that the beam impinges upon a substrate surface and interacts with surface material so as to cause secondary emission of scattered electrons, and a detector configured to detect the scattered electrons. The apparatus further includes an advantageous device configured to trap the scattered electrons which are emitted at sharp angles relative to the sample surface plane of the substrate surface. Other embodiments are also disclosed.

    摘要翻译： 一个实施例涉及电子束装置。 该装置包括用于产生入射电子束的源，用于聚焦入射电子束的电子透镜，使得光束撞击在衬底表面上并与表面材料相互作用以引起散射电子的二次发射;以及检测器，被配置为 检测散射的电子。 该装置还包括有利的装置，其被配置为捕获相对于衬底表面的样品表面平面以锐角发射的散射电子。 还公开了其他实施例。

    Thin-film structure with tapered feature
    8.
    发明授权
    Thin-film structure with tapered feature 失效
    具有锥形特征的薄膜结构

    公开(公告)号：US5528082A

    公开(公告)日：1996-06-18

    申请号：US235010

    申请日：1994-04-28

    申请人： Jackson H. Ho ,  Robert R. Allen, deceased ,  Tzu-Chin Chuang

    发明人： Jackson H. Ho ,  Robert R. Allen, deceased ,  Tzu-Chin Chuang

    IPC分类号： B05D7/00 ,  G02F1/1362 ,  H01L21/033 ,  H01L21/203 ,  H01L21/306 ,  H01L21/3213 ,  H01L23/48 ,  H01L23/52 ,  H01L27/01 ,  H01L29/76

    CPC分类号： H01L21/0337 ,  H01L21/32139 ,  G02F1/136286 ,  Y10S257/92

    摘要： A feature in a thin-film structure such as an AMLCD array has an edge with a tapered sidewall profile, reducing step coverage problems. The feature can be produced by producing a layer in which local etch rates vary in the thickness direction of the layer. The layer can then be etched to produce the feature with the tapered sidewall profile. The layer can be produced by physical vapor deposition. The layer can, for example, includes sublayers with different etch rates, either due to different atomic proportions of constituents or due to different etchants. Or local etch rates can vary continuously as a result of changing deposition conditions. Differences in etch rates or differences in etchant mixtures can be used to obtain a desired angle of elevation.

    摘要翻译： 诸如AMLCD阵列之类的薄膜结构中的特征具有边缘具有锥形侧壁轮廓，从而减少了步骤覆盖问题。 该特征可以通过产生其中局部蚀刻速率在层的厚度方向上变化的层来产生。 然后可以蚀刻该层以产生具有锥形侧壁轮廓的特征。 该层可以通过物理气相沉积产生。 例如，该层可以包括具有不同蚀刻速率的子层，这是由于组分的原子比例不同或由于不同的蚀刻剂。 或者局部蚀刻速率可以随着沉积条件的改变而连续变化。 蚀刻速率的差异或蚀刻剂混合物的差异可用于获得期望的仰角。

    Thin-film structure with conductive molybdenum-chromium line
    9.
    发明授权
    Thin-film structure with conductive molybdenum-chromium line 失效
    导电钼铬线薄膜结构

    公开(公告)号：US5693983A

    公开(公告)日：1997-12-02

    申请号：US235008

    申请日：1994-04-28

    申请人： Jackson H. Ho ,  Robert R. Allen, deceased ,  Tzu-Chin Chuang

    发明人： Jackson H. Ho ,  Robert R. Allen, deceased ,  Tzu-Chin Chuang

    IPC分类号： G02F1/136 ,  G02F1/1362 ,  H01L21/3205 ,  H01L23/52 ,  H01L23/532 ,  H01L29/786

    CPC分类号： H01L23/53257 ,  G02F2001/136295 ,  H01L2924/0002 ,  H01L2924/3011

    摘要： A conductive line in a thin-film structure such as an AMLCD array includes molybdenum and chromium so that it can be processed in a manner similar to chromium but has a greater conductivity than chromium due to the molybdenum. The conductive line can be produced by physical vapor deposition of a layer of a molybdenum-chromium (MoCr) alloy, which can then be masked and etched using photolithographic techniques in a manner similar to chromium. Proportions between 15 and 85 atomic percent of molybdenum can be processed more easily than pure molybdenum and are more conductive than pure chromium. Lines with between 40 and 60 atomic percent molybdenum can be used with a margin of error. To produce a tapered conductive line, sublayers of MoCr alloys with different etch rates can be produced and etched.

    摘要翻译： 诸如AMLCD阵列的薄膜结构中的导线包括钼和铬，使得其可以以与铬类似的方式进行加工，但由于钼而具有比铬更高的导电性。 导电线可以通过钼 - 铬（MoCr）合金层的物理气相沉积来制造，然后可以以类似于铬的方式使用光刻技术进行掩模和蚀刻。 比例比纯钼更容易处理15到85原子％的钼的比例，比纯铬更加导电。 具有40至60原子％钼的线可以使用误差。 为了生产锥形导电线，可以生产和蚀刻具有不同蚀刻速率的MoCr合金的子层。