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公开(公告)号:US09536855B2
公开(公告)日:2017-01-03
申请号:US14784127
申请日:2014-03-27
发明人: Koji Yamazaki , Takeshi Araki
CPC分类号: H01L24/49 , B23K20/004 , B23K35/3006 , C22C5/06 , H01L23/49 , H01L23/49513 , H01L24/29 , H01L24/32 , H01L24/43 , H01L24/45 , H01L24/48 , H01L24/83 , H01L24/85 , H01L2224/04026 , H01L2224/05568 , H01L2224/05639 , H01L2224/26175 , H01L2224/2733 , H01L2224/29111 , H01L2224/32225 , H01L2224/325 , H01L2224/32507 , H01L2224/4501 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/45155 , H01L2224/4516 , H01L2224/48225 , H01L2224/48499 , H01L2224/48507 , H01L2224/49173 , H01L2224/83011 , H01L2224/83014 , H01L2224/8309 , H01L2224/8314 , H01L2224/83191 , H01L2224/83203 , H01L2224/83385 , H01L2224/83439 , H01L2224/85801 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01022 , H01L2924/01026 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01031 , H01L2924/01032 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01051 , H01L2924/01078 , H01L2924/01079 , H01L2924/01083 , H01L2924/01322 , H01L2924/014 , H01L2924/10254 , H01L2924/10272 , H01L2924/1033 , H01L2924/12 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/19107 , H01L2924/2064 , H01L2924/20641 , H01L2924/20751 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/351 , H01L2924/00 , H01L2924/00014 , H01L2924/00012
摘要: A semiconductor device includes, an alloy layer sandwiched between a first Ag layer formed on a mounting board or circuit board and a second Ag layer formed on a semiconductor element, wherein the alloy layer contains an intermetallic compound of Ag3Sn formed by Ag components of the first Ag layer and the second Ag layer and Sn, and wherein a plurality of wires containing Ag are arranged extended from an outside-facing periphery of the alloy layer.
摘要翻译: 半导体装置包括:夹在形成于安装基板或电路基板上的第一Ag层与形成在半导体元件上的第二Ag层之间的合金层,其中,所述合金层含有由所述第一Ag的Ag成分形成的Ag 3 Sn的金属间化合物, Ag层和第二Ag层和Sn,并且其中包含Ag的多个布线从合金层的面向外周延伸设置。