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公开(公告)号:US20070252288A1
公开(公告)日:2007-11-01
申请号:US11772901
申请日:2007-07-03
申请人: MUKTA FAROOQ , John Knickerbocker , Frank Pompeo , Subhash Shinde
发明人: MUKTA FAROOQ , John Knickerbocker , Frank Pompeo , Subhash Shinde
CPC分类号: H01L23/562 , H01L21/563 , H01L23/36 , H01L23/49827 , H01L24/75 , H01L2224/16 , H01L2224/73203 , H01L2224/73253 , H01L2924/01004 , H01L2924/01029 , H01L2924/01079 , H01L2924/16195
摘要: Under the present invention, a semiconductor chip is electrically connected to a substrate (e.g., organic, ceramic, etc.) by an interposer structure. The interposer structure comprises an elastomeric, compliant material that includes metallurgic through connections having a predetermined shape. In a typical embodiment, the metallurgical through connections electrically connect an under bump metallization of the semiconductor chip to a top surface metallization of the substrate. By utilizing the interposer structure in accordance with the present invention, the problems associated with previous semiconductor module designs are alleviated.
摘要翻译: 在本发明中,半导体芯片通过插入件结构与基板(例如有机,陶瓷等)电连接。 插入器结构包括弹性体柔性材料,其包括具有预定形状的通过连接的冶金。 在典型的实施例中,冶金通孔连接将半导体芯片的凸起下金属化电连接到衬底的顶表面金属化。 通过利用根据本发明的插入器结构,可以减轻与先前的半导体模块设计相关的问题。
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公开(公告)号:US20050110160A1
公开(公告)日:2005-05-26
申请号:US10721984
申请日:2003-11-25
申请人: Mukta Faroog , John Knickerbocker , Frank Pompeo , Subhash Shinde
发明人: Mukta Faroog , John Knickerbocker , Frank Pompeo , Subhash Shinde
CPC分类号: H01L23/562 , H01L21/563 , H01L23/36 , H01L23/49827 , H01L24/75 , H01L2224/16 , H01L2224/73203 , H01L2224/73253 , H01L2924/01004 , H01L2924/01029 , H01L2924/01079 , H01L2924/16195
摘要: Under the present invention, a semiconductor chip is electrically connected to a substrate (e.g., organic, ceramic, etc.) by an interposer structure. The interposer structure comprises an elastomeric, compliant material that includes metallurgic through connections having a predetermined shape. In a typical embodiment, the metallurgical through connections electrically connect an under bump metallization of the semiconductor chip to a top surface metallization of the substrate. By utilizing the interposer structure in accordance with the present invention, the problems associated with previous semiconductor module designs are alleviated.
摘要翻译: 在本发明中,半导体芯片通过插入件结构与基板(例如有机,陶瓷等)电连接。 插入器结构包括弹性体柔性材料,其包括具有预定形状的通过连接的冶金。 在典型的实施例中,冶金通孔连接将半导体芯片的凸起下金属化电连接到衬底的顶表面金属化。 通过利用根据本发明的插入器结构,可以减轻与先前的半导体模块设计相关的问题。
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公开(公告)号:US20060043608A1
公开(公告)日:2006-03-02
申请号:US10711185
申请日:2004-08-31
申请人: William Bernier , Marie Cole , Mukta Farooq , John Knickerbocker , Tasha Lopez , Roger Quon , David Welsh
发明人: William Bernier , Marie Cole , Mukta Farooq , John Knickerbocker , Tasha Lopez , Roger Quon , David Welsh
IPC分类号: H01L23/48
CPC分类号: H05K3/321 , H01L24/05 , H01L24/12 , H01L24/16 , H01L24/29 , H01L24/83 , H01L2224/0401 , H01L2224/05557 , H01L2224/13076 , H01L2224/13078 , H01L2224/1308 , H01L2224/131 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/13339 , H01L2224/13464 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/838 , H01L2924/00013 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/09701 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H05K2201/0212 , H05K2201/0248 , H05K2201/0373 , H05K2201/1025 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , H01L2924/01026 , H01L2924/00015 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要: Disclosed is a laminated (or non-laminated) conductive interconnection for joining an integrated circuit device to a device carrier, where the conductive interconnection comprises alternating metal layers and polymer layers. In addition, the polymer can include dendrites, metal projections from the carrier or device, and/or micelle brushes on the outer portion of the polymer. The polymer layers include metal particles and the alternating metal layers and polymer layers form either a cube-shaped structure or a cylinder-shaped structure.
摘要翻译: 公开了用于将集成电路器件连接到器件载体的层压(或非层叠)导电互连,其中导电互连包括交替的金属层和聚合物层。 此外,聚合物可以包括枝晶,来自载体或器件的金属突起,和/或聚合物外部的胶束刷。 聚合物层包括金属颗粒,并且交替的金属层和聚合物层形成立方体结构或圆柱形结构。
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公开(公告)号:US20070084629A1
公开(公告)日:2007-04-19
申请号:US11538823
申请日:2006-10-05
申请人: William Bernier , Marie Cole , Mukta Farooq , John Knickerbocker , Tasha Lopez , Roger Quon , David Welsh
发明人: William Bernier , Marie Cole , Mukta Farooq , John Knickerbocker , Tasha Lopez , Roger Quon , David Welsh
IPC分类号: H05K1/16
CPC分类号: H05K3/321 , H01L24/05 , H01L24/12 , H01L24/16 , H01L24/29 , H01L24/83 , H01L2224/0401 , H01L2224/05557 , H01L2224/13076 , H01L2224/13078 , H01L2224/1308 , H01L2224/131 , H01L2224/1319 , H01L2224/1329 , H01L2224/133 , H01L2224/13339 , H01L2224/13464 , H01L2224/29101 , H01L2224/29111 , H01L2224/2919 , H01L2224/2929 , H01L2224/293 , H01L2224/838 , H01L2924/00013 , H01L2924/01006 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/014 , H01L2924/0665 , H01L2924/0781 , H01L2924/09701 , H01L2924/14 , H01L2924/15787 , H01L2924/15788 , H01L2924/1579 , H05K2201/0212 , H05K2201/0248 , H05K2201/0373 , H05K2201/1025 , H01L2924/00014 , H01L2224/13099 , H01L2924/00 , H01L2924/01026 , H01L2924/00015 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299
摘要: Disclosed is a laminated (or non-laminated) conductive interconnection for joining an integrated circuit device to a device carrier, where the conductive interconnection comprises alternating metal layers and polymer layers. In addition, the polymer can include dendrites, metal projections from the carrier or device, and/or micelle brushes on the outer portion of the polymer. The polymer layers include metal particles and the alternating metal layers and polymer layers form either a cube-shaped structure or a cylinder-shaped structure.
摘要翻译: 公开了用于将集成电路器件连接到器件载体的层压(或非层叠)导电互连,其中导电互连包括交替的金属层和聚合物层。 此外,聚合物可以包括枝晶,来自载体或器件的金属突起,和/或聚合物外部的胶束刷。 聚合物层包括金属颗粒,并且交替的金属层和聚合物层形成立方体结构或圆柱形结构。
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公开(公告)号:US20080009101A1
公开(公告)日:2008-01-10
申请号:US11858147
申请日:2007-09-20
申请人: William Bernier , Tien-Jen Cheng , Marie Cole , David Eichstadt , Mukta Farooq , John Fitzsimmons , Lewis Goldmann , John Knickerbocker , Tasha Lopez , David Welsh
发明人: William Bernier , Tien-Jen Cheng , Marie Cole , David Eichstadt , Mukta Farooq , John Fitzsimmons , Lewis Goldmann , John Knickerbocker , Tasha Lopez , David Welsh
IPC分类号: H01L21/00
CPC分类号: H01L21/563 , H01L23/3171 , H01L24/12 , H01L24/16 , H01L24/81 , H01L2224/10126 , H01L2224/13099 , H01L2224/131 , H01L2224/13566 , H01L2224/16 , H01L2224/73203 , H01L2224/8121 , H01L2224/81815 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01R43/0256 , H05K3/284 , H05K3/3436 , H05K2201/0133 , H05K2201/10977 , Y02P70/613 , H01L2224/29099 , H01L2224/0401
摘要: Disclosed is a method of forming an integrated circuit structure that forms lead-free connectors on a device, surrounds the lead-free connectors with a compressible film, connects the device to a carrier (the lead-free connectors electrically connect the device to the carrier), and fills the gaps between the carrier and the device with an insulating underfill.
摘要翻译: 公开了一种形成集成电路结构的方法,其在器件上形成无铅连接器,用可压缩膜围绕无铅连接器,将器件连接到载体(无铅连接器将器件电连接到载体上 ),并用绝缘底部填充物填充载体和装置之间的间隙。
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公开(公告)号:US20060172565A1
公开(公告)日:2006-08-03
申请号:US10906111
申请日:2005-02-03
IPC分类号: H01R12/00
CPC分类号: H01L24/13 , G01R1/06716 , G01R1/07314 , G01R3/00 , H01L21/6835 , H01L24/11 , H01L24/81 , H01L2221/68377 , H01L2224/11003 , H01L2224/114 , H01L2224/11505 , H01L2224/116 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13169 , H01L2224/1318 , H01L2224/13184 , H01L2224/81205 , H01L2224/8121 , H01L2224/81815 , H01L2224/8384 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/30105 , H01L2924/30107 , H05K3/06 , H05K3/3436 , H05K2201/10242 , Y02P70/613 , Y10T29/49124 , Y10T29/49204 , H01L2224/13099 , H01L2924/00 , H01L2224/0401
摘要: A method of forming compliant electrical contacts includes patterning a conductive layer into an array of compliant members. The array of compliant members is then positioned to be in contact with electrical connection pads on an integrated circuit wafer and the compliant members are joined to the pads. Then, the supporting layer that supported the compliant members is removed to leave the compliant members connected to the pads.
摘要翻译: 形成顺应性电触头的方法包括将导电层图案化为顺应构件阵列。 然后将顺应构件阵列定位成与集成电路晶片上的电连接焊盘接触,并且柔性构件连接到焊盘。 然后,移除支撑柔顺构件的支撑层,以使与柔性构件连接的衬垫离开。
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公开(公告)号:US20080000080A1
公开(公告)日:2008-01-03
申请号:US11856084
申请日:2007-09-17
IPC分类号: H05K3/00
CPC分类号: H01L24/13 , G01R1/06716 , G01R1/07314 , G01R3/00 , H01L21/6835 , H01L24/11 , H01L24/81 , H01L2221/68377 , H01L2224/11003 , H01L2224/114 , H01L2224/11505 , H01L2224/116 , H01L2224/1308 , H01L2224/13082 , H01L2224/131 , H01L2224/13144 , H01L2224/13147 , H01L2224/13155 , H01L2224/13169 , H01L2224/1318 , H01L2224/13184 , H01L2224/81205 , H01L2224/8121 , H01L2224/81815 , H01L2224/8384 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01046 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/1461 , H01L2924/30105 , H01L2924/30107 , H05K3/06 , H05K3/3436 , H05K2201/10242 , Y02P70/613 , Y10T29/49124 , Y10T29/49204 , H01L2224/13099 , H01L2924/00 , H01L2224/0401
摘要: A method of forming compliant electrical contacts includes patterning a conductive layer into an array of compliant members. The array of compliant members is then positioned to be in contact with electrical connection pads on an integrated circuit wafer and the compliant members are joined to the pads. Then, the supporting layer that supported the compliant members is removed to leave the compliant members connected to the pads.
摘要翻译: 形成顺应性电触头的方法包括将导电层图案化为顺应构件阵列。 然后将顺应构件阵列定位成与集成电路晶片上的电连接焊盘接触,并且柔性构件连接到焊盘。 然后,移除支撑柔顺构件的支撑层,以使与柔性构件连接的衬垫离开。
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公开(公告)号:US20060040567A1
公开(公告)日:2006-02-23
申请号:US10711076
申请日:2004-08-20
申请人: William Bernier , Tien-Jen Cheng , Marie Cole , David Eichstadt , Mukta Farooq , John Fitzsimmons , Lewis Goldmann , John Knickerbocker , Tasha Lopez , David Welsh
发明人: William Bernier , Tien-Jen Cheng , Marie Cole , David Eichstadt , Mukta Farooq , John Fitzsimmons , Lewis Goldmann , John Knickerbocker , Tasha Lopez , David Welsh
CPC分类号: H01L21/563 , H01L23/3171 , H01L24/12 , H01L24/16 , H01L24/81 , H01L2224/10126 , H01L2224/13099 , H01L2224/131 , H01L2224/13566 , H01L2224/16 , H01L2224/73203 , H01L2224/8121 , H01L2224/81815 , H01L2924/00011 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01075 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01R43/0256 , H05K3/284 , H05K3/3436 , H05K2201/0133 , H05K2201/10977 , Y02P70/613 , H01L2224/29099 , H01L2224/0401
摘要: Disclosed is a method of forming an integrated circuit structure that forms lead-free connectors on a device, surrounds the lead-free connectors with a compressible film, connects the device to a carrier (the lead-free connectors electrically connect the device to the carrier), and fills the gaps between the carrier and the device with an insulating underfill.
摘要翻译: 公开了一种形成集成电路结构的方法,其在器件上形成无铅连接器,用可压缩膜围绕无铅连接器,将器件连接到载体(无铅连接器将器件电连接到载体上 ),并用绝缘底部填充物填充载体和装置之间的间隙。
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公开(公告)号:US08388782B2
公开(公告)日:2013-03-05
申请号:US12788832
申请日:2010-05-27
申请人: Paul S. Andry , Bing Dang , John Knickerbocker , Aparna Prahbakar , Peter J. Sorce , Robert E. Trzcinski , Cornelia K. Tsang
发明人: Paul S. Andry , Bing Dang , John Knickerbocker , Aparna Prahbakar , Peter J. Sorce , Robert E. Trzcinski , Cornelia K. Tsang
CPC分类号: H01L21/67132 , C09J5/06 , C09J2203/326 , C09J2479/08 , H01L21/6835 , H01L2221/6835 , H01L2221/68381 , Y10T156/1158
摘要: A method for attaching a handler to a wafer, the wafer comprising an integrated circuit (IC), includes forming a layer of an adhesive on the wafer, the adhesive comprising a polyimide-based polymer configured to withstand processing at a temperature of over about 280° C.; and adhering a handler to the wafer using the layer of adhesive. A system for attaching a handler to a wafer, the wafer comprising IC, includes a layer of an adhesive located on the wafer, the adhesive comprising a polyimide-based polymer configured to withstand processing at a temperature of over about 280° C.; and a handler adhered to the wafer using the layer of adhesive.
摘要翻译: 一种用于将处理器附接到晶片的方法,所述晶片包括集成电路(IC),包括在所述晶片上形成粘合剂层,所述粘合剂包括基于聚酰亚胺的聚合物,所述聚酰亚胺基聚合物构造成经受超过约280℃的温度下的加工 C。; 以及使用所述粘合剂层将处理器粘附到所述晶片。 一种用于将处理器附接到晶片的系统,包括IC的晶片包括位于晶片上的粘合剂层,所述粘合剂包括基于聚酰亚胺的聚合物,其被配置为经受超过约280℃的温度下的加工; 以及使用粘合剂层粘附到晶片的处理器。
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公开(公告)号:US20110290413A1
公开(公告)日:2011-12-01
申请号:US12788839
申请日:2010-05-27
申请人: Bing Dang , Matthew Farinelli , John Knickerbocker , Aparna Prabhakar , Robert E. Trzcinski , Cornelia K. Tsang
发明人: Bing Dang , Matthew Farinelli , John Knickerbocker , Aparna Prabhakar , Robert E. Trzcinski , Cornelia K. Tsang
CPC分类号: H01L21/6835 , B23K26/0622 , B23K26/0823 , B23K26/361 , B23K26/57 , B23K2101/40 , B23K2103/42 , B23K2103/50 , C09J5/00 , C09J2203/326 , C09J2205/302 , C09J2400/22 , H01L2221/68381 , Y10T156/1158 , Y10T156/1917
摘要: A method for releasing a handler from a wafer, the wafer comprising an integrated circuit (IC), includes attaching the handler to the wafer using an adhesive comprising a thermoset polymer, the handler comprising a material that is transparent in a wavelength range of about 193 nanometers (nm) to about 400 nm; ablating the adhesive through the handler using a laser, wherein a wavelength of the laser is selected based on the transparency of the handler material; and separating the handler from the wafer.
摘要翻译: 一种用于从晶片释放处理器的方法,所述晶片包括集成电路(IC),包括使用包含热固性聚合物的粘合剂将所述处理器附接到所述晶片,所述处理器包括在约193的波长范围内是透明的材料 纳米(nm)至约400nm; 使用激光器通过处理器烧蚀粘合剂,其中基于处理材料的透明度选择激光的波长; 并将处理器与晶片分离。
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