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公开(公告)号：US20240318342A1
公开(公告)日：2024-09-26
申请号：US18578049
申请日：2022-07-25
Applicant: MacDermid Enthone Inc.
Inventor： Jianwen Han , Pingping Ye , Kyle M Whitten , Stephan I. Braye , Thomas B. Richardson , Elie H. Najjar
Abstract: A copper electrolyte comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electrolyte is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxy] may comprise a reaction product between 2,3-epoxy-1-propanol and an amine compound. A leveler comprising a polymeric quaternary nitrogen species and/or an accelerator comprising an organic sulfur compound may also be added to the copper electrolyte so long as the nanotwinned columnar copper grains are maintained.
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公开(公告)号：US20240110306A1
公开(公告)日：2024-04-04
申请号：US18534819
申请日：2023-12-11
Applicant: MacDermid Enthone Inc.
Inventor： Kyle M. Whitten , Stephan I. Braye , Jianwen Han , Pingping Ye , Thomas B. Richardson , Elie H. Najjar
Abstract: A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.
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公开(公告)号：US20230407467A1
公开(公告)日：2023-12-21
申请号：US18242599
申请日：2023-09-06
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L. Wilkins , Elie H. Najjar , Wenbo Shao
CPC classification number: C23C16/403 , C23C16/02 , C23C14/081 , C23C14/02 , C25D3/00
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号：US20220259724A1
公开(公告)日：2022-08-18
申请号：US17665871
申请日：2022-02-07
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L. Wilkins , Elie H. Najjar , Wenbo Shao
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号：US12157944B2
公开(公告)日：2024-12-03
申请号：US18242599
申请日：2023-09-06
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L Wilkins , Elie H. Najjar , Wenbo Shao
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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Patent Agency Ranking
公开(公告)号：US11846018B2
公开(公告)日：2023-12-19
申请号：US17665871
申请日：2022-02-07
Applicant: MacDermid Enthone Inc.
Inventor： Richard W. Hurtubise , Eric Yakobson , Shaopeng Sun , Taylor L. Wilkins , Elie H. Najjar , Wenbo Shao
CPC classification number: C23C16/403 , C23C14/02 , C23C14/081 , C23C16/02 , C25D3/00
Abstract: A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon.
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公开(公告)号：US11384446B2
公开(公告)日：2022-07-12
申请号：US17005407
申请日：2020-08-28
Applicant: MacDermid Enthone Inc.
Inventor： Kyle M. Whitten , Stephan I. Braye , Jianwen Han , Pingping Ye , Thomas B. Richardson , Elie H. Najjar
Abstract: A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.
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公开(公告)号：US11873568B2
公开(公告)日：2024-01-16
申请号：US17834265
申请日：2022-06-07
Applicant: MacDermid Enthone Inc.
Inventor： Kyle M. Whitten , Stephan I. Braye , Jianwen Han , Pingping Ye , Thomas B. Richardson , Elie H. Najjar
Abstract: A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.
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公开(公告)号：US20220298665A1
公开(公告)日：2022-09-22
申请号：US17834265
申请日：2022-06-07
Applicant: MacDermid Enthone Inc.
Inventor： Kyle M. Whitten , Stephan I. Braye , Jianwen Han , Pingping Ye , Thomas B. Richardson , Elie H. Najjar
Abstract: A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.
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公开(公告)号：US20220064812A1
公开(公告)日：2022-03-03
申请号：US17005407
申请日：2020-08-28
Applicant: MacDermid Enthone Inc.
Inventor： Kyle M. Whitten , Stephan I. Braye , Jianwen Han , Pingping Ye , Thomas B. Richardson , Elie H. Najjar
Abstract: A copper electroplating solution comprising a copper salt, a source of halide ions, and a linear or branched polyhydroxyl. The copper electroplating solution is used to deposit copper having a high density of nanotwinned columnar copper grains on a substrate. The linear or branched polyhydroxyl may comprise a reaction product between 2,3-epoxy-1-propanol and aminic alcohol or ammonium alcohol.
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