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    Top coat material and use thereof in lithography processes
    3.
    发明授权
    Top coat material and use thereof in lithography processes 失效
    面漆材料及其在光刻工艺中的应用

    公开(公告)号：US07700262B2

    公开(公告)日：2010-04-20

    申请号：US12044004

    申请日：2008-03-07

    申请人： Wenjie Li ,  Margaret C. Lawson ,  Pushkara Rao Varanasi

    发明人： Wenjie Li ,  Margaret C. Lawson ,  Pushkara Rao Varanasi

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10T428/3154

    摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

    摘要翻译： 公开了一种用于涂覆在光致抗蚀剂材料上的顶涂层材料。 面漆材料包括聚合物，其包括至少一种具有以下两种结构之一的氟磺酰胺单体单元：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - 和-O-C（O）-C（O）-O-的连接部分; R1选自亚烷基，亚芳基，半或全氟亚烷基，以及半或全氟化亚芳基; p和q为0或1; R2选自氢，氟，1至6个碳的烷基和1至6个碳的半或全氟化烷基; n是1至6的整数; 并且R 3选自氢，烷基，芳基，半或全氟烷基和半或全氟芳基。 面漆材料可以用在光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 顶涂层材料优选可溶于含水碱性显影剂。 面漆材料也优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

    TOP COAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESSES
    4.
    发明申请
    TOP COAT MATERIAL AND USE THEREOF IN LITHOGRAPHY PROCESSES 失效

    公开(公告)号：US20080166568A1

    公开(公告)日：2008-07-10

    申请号：US12044004

    申请日：2008-03-07

    申请人： Wenjie Li ,  Margaret C. Lawson ,  Pushkara Rao Varanasi

    发明人： Wenjie Li ,  Margaret C. Lawson ,  Pushkara Rao Varanasi

    IPC分类号： B32B27/28

    CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10T428/3154

    摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

    Top coat material and use thereof in lithography processes
    5.
    发明授权
    Top coat material and use thereof in lithography processes 有权
    面漆材料及其在光刻工艺中的应用

    公开(公告)号：US07335456B2

    公开(公告)日：2008-02-26

    申请号：US10855045

    申请日：2004-05-27

    申请人： Wenjie Li ,  Margaret C. Lawson ,  Pushkara Rao Varanasi

    发明人： Wenjie Li ,  Margaret C. Lawson ,  Pushkara Rao Varanasi

    IPC分类号： G03F7/00 ,  G03F7/004

    CPC分类号： G03F7/11 ,  G03F7/0046 ,  G03F7/2041 ,  Y10T428/3154

    摘要： A top coat material for applying on top of a photoresist material is disclosed. The top coat material includes a polymer, which includes at least one fluorosulfonamide monomer unit having one of the following two structures: wherein: M is a polymerizable backbone moiety; Z is a linking moiety selected from the group consisting of —C(O)O—, —C(O)—, —OC(O)—, and —O—C(O)—C(O)—O—; R1 is selected from the group consisting of an alkylene, an arylene, a semi- or perfluorinated alkylene, and a semi- or perfluorinated arylene; p and q are 0 or 1; R2 is selected from the group consisting of hydrogen, fluorine, an alkyl group of 1 to 6 carbons, and a semi- or perfluorinated alkyl group of 1 to 6 carbons; n is an integer from 1 to 6; and R3 is selected from the group consisting of hydrogen, an alkyl, an aryl, a semi- or perfluorinated alkyl, and a semi- or perfluorinated aryl. The top coat material may be used in lithography processes, wherein the top coat material is applied on a photoresist layer. The top coat material is preferably soluble in aqueous alkaline developer. The top coat material is also preferably insoluble in water, and is therefore particularly useful in immersion lithography techniques using water as the imaging medium.

    摘要翻译： 公开了一种用于涂覆在光致抗蚀剂材料上的顶涂层材料。 面漆材料包括聚合物，其包括至少一种具有以下两种结构之一的氟磺酰胺单体单元：其中：M是可聚合主链部分; Z是选自-C（O）O-，-C（O） - ， - OC（O） - 和-O-C（O）-C（O）-O-的连接部分; R 1选自亚烷基，亚芳基，半或全氟亚烷基，以及半或全氟化亚芳基; p和q为0或1; R 2选自氢，氟，1至6个碳的烷基和1至6个碳的半或全氟化烷基; n是1至6的整数; 和R 3 3选自氢，烷基，芳基，半或全氟烷基和半或全氟芳基。 面漆材料可以用在光刻工艺中，其中将顶涂层材料施加在光致抗蚀剂层上。 顶涂层材料优选可溶于含水碱性显影剂。 面漆材料也优选不溶于水，因此特别适用于使用水作为成像介质的浸渍光刻技术。

    Method of reducing post-development defects in and around openings formed in photoresist by use of multiple development/rinse cycles
    10.
    发明授权
    Method of reducing post-development defects in and around openings formed in photoresist by use of multiple development/rinse cycles 有权
    通过使用多个显影/冲洗循环来减少在光致抗蚀剂中形成的开口周围及其周围的显影后缺陷的方法

    公开(公告)号：US06372408B1

    公开(公告)日：2002-04-16

    申请号：US09598374

    申请日：2000-06-21

    申请人： Zhijian Lu ,  Alan Thomas ,  Alois Gutmann ,  Kuang Jung Chen ,  Margaret C. Lawson

    发明人： Zhijian Lu ,  Alan Thomas ,  Alois Gutmann ,  Kuang Jung Chen ,  Margaret C. Lawson

    IPC分类号： G03F730

    CPC分类号： G03F7/3021

    摘要： In the exposure and development of available deep ultraviolet (DUV) sensitive photoresist it has been observed that following the standard prior art methods of exposure and development results in a high density of undesirable remnants (denoted as Blob Defects) of various components of photoresist material remaining on the semiconductor substrate (body). A method of exposing and developing the photoresist material which results in a reduced incidence of these Blob Defects consists of using a Puddle Development technique to develop the photoresist material, and subsequently exposing the semiconductor wafer to at least one Puddle Rinse cycle which uses water.

    摘要翻译： 在可用的深紫外（DUV）敏感光刻胶的曝光和显影中，已经观察到遵循现有技术的标准曝光和显影方法导致残留的光致抗蚀剂材料的各种组分的不希望的残留物（表示为Blob缺陷）的高密度 在半导体基板（主体）上。 曝光和显影光致抗蚀剂材料的方法导致这些Blob缺陷的发生率降低，包括使用水坑开发技术开发光致抗蚀剂材料，随后将半导体晶片暴露于使用水的至少一个水坑冲洗循环。