公开(公告)号：US20120146116A1

公开(公告)日：2012-06-14

申请号：US13235405

申请日：2011-09-18

Applicant: Maki SATO

Inventor： Maki SATO

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/1464 ,  H01L27/14623 ,  H01L27/14636 ,  H01L27/14638 ,  H01L27/14656 ,  H01L27/14687 ,  H04N5/3592

Abstract: According to one embodiment, an imaging device includes a semiconductor substrate having a first conductivity type, a well region which is arranged on a front surface side of the semiconductor substrate and has the first conductivity type, photodiodes which are arranged in the well region and have a second conductivity type, a diffusion layer which is arranged between the photodiodes, supplies a potential to the well region, and has the first conductivity type, an overflow drain layer which is arranged on a back surface side of the semiconductor substrate and has the second conductivity type, an overflow drain electrode which extends from the front surface side of the semiconductor substrate to the overflow drain layer and supplies a bias potential to the overflow drain layer from the front surface side of the semiconductor substrate, and a wiring layer which is arranged on the front surface of the semiconductor substrate.

Abstract translation: 根据一个实施例，一种成像装置包括具有第一导电类型的半导体衬底，布置在半导体衬底的前表面侧并且具有第一导电类型的阱区，其布置在阱区中并具有 第二导电类型，布置在光电二极管之间的扩散层向阱区提供电势，并且具有第一导电类型，布置在半导体衬底的背面侧上的溢出漏极层，并且具有第二导电类型 导电型，从半导体衬底的前表面侧延伸到溢出漏极层的溢出漏极，并且从半导体衬底的正面侧向溢出漏极层提供偏置电位;布线层，其布置在 在半导体衬底的前表面上。

公开(公告)号：US20110248149A1

公开(公告)日：2011-10-13

申请号：US13052187

申请日：2011-03-21

Applicant: Maki SATO ,  Satoshi Sakurai

Inventor： Maki SATO ,  Satoshi Sakurai

IPC: G01J1/44

CPC classification number: H04N5/374 ,  H04N5/378

Abstract: According to one embodiment, a solid-state image sensing device for reading out, via an output circuit, a reset signal and a pixel signal from a pixel unit which performs photoelectric conversion includes a comparator which compares a signal read out from the pixel unit with a reference signal, a counter which counts clocks input until a pulse signal indicating a comparison result from the comparator is obtained, and a counter controller which prevents the counter from performing an operation of stopping pixel signal counting, based on an output result of the reset signal from the comparator.

Abstract translation: 根据一个实施例，一种用于经由输出电路从执行光电转换的像素单元读出复位信号和像素信号的固态图像感测装置包括：将从像素单元读出的信号与 一个参考信号，一个对来自比较器的指示比较结果的脉冲信号进行计数的计数器，以及一个防止计数器根据复位输出结果执行停止像素信号计数操作的计数器控制器 信号来自比较器。

公开(公告)号：US20110109781A1

公开(公告)日：2011-05-12

申请号：US12939612

申请日：2010-11-04

Applicant: Maki SATO

Inventor： Maki SATO

IPC: H04N5/335 ,  H01L31/102 ,  H01L27/146

CPC classification number: H01L27/14643 ,  H04N5/3532 ,  H04N5/3559 ,  H04N5/3765

Abstract: According to one embodiment, a solid state imaging device includes a first photodiode, a first transistor, a floating diffusion, a second transistor, a third transistor. The first photodiode performs photoelectric conversion and accumulates a charge obtained. The first transistor reads the charge. The floating diffusion is one end of a current pathway of the first transistor. The charge is read through the first transistor to the first node. The second transistor's gate is connected to the first node. The second transistor's one end of a current pathway is connected to a vertical signal line. The one end of a current pathway of the third transistor is connected to the floating diffusion. Another end is connected to a power supply. The charge accumulated in the floating diffusion is discharged to the power supply by turning on the third transistor.

Abstract translation: 根据一个实施例，固态成像装置包括第一光电二极管，第一晶体管，浮动扩散，第二晶体管，第三晶体管。 第一光电二极管执行光电转换并累积所获得的电荷。 第一个晶体管读取电荷。 浮动扩散是第一晶体管的电流通路的一端。 电荷通过第一晶体管读取到第一节点。 第二晶体管的栅极连接到第一节点。 电流通路的第二晶体管的一端连接到垂直信号线。 第三晶体管的电流通路的一端与浮动扩散连接。 另一端连接电源。 通过接通第三晶体管，在浮动扩散中累积的电荷被放电到电源。

公开(公告)号：US20130134538A1

公开(公告)日：2013-05-30

申请号：US13680946

申请日：2012-11-19

Applicant: Maki SATO ,  Koichi Kokubun

Inventor： Maki SATO ,  Koichi Kokubun

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/0232 ,  H01L27/14621 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/14689 ,  H01L31/18

Abstract: According to an embodiment, an image sensor is provided for photoelectrically converting blue light, green light and red light for each pixel. A photoelectric conversion layer for red light is provided having a light absorption coefficient that is different than the light absorption coefficient of the photoelectric conversion layers for blue light and green light.

Abstract translation: 根据一个实施例，提供一种图像传感器，用于对每个像素进行蓝光，绿光和红光的光电转换。 提供了一种用于红光的光电转换层，其具有与用于蓝光和绿光的光电转换层的光吸收系数不同的光吸收系数。

公开(公告)号：US20120307117A1

公开(公告)日：2012-12-06

申请号：US13368615

申请日：2012-02-08

Applicant: Maki SATO ,  Toshikazu ODA

Inventor： Maki SATO ,  Toshikazu ODA

IPC: H04N5/335

CPC classification number: H04N5/378

Abstract: According to one embodiment, a solid-state imaging device includes: a pixel array section in which pixels that accumulate photoelectrically-converted charges are arranged in a matrix shape; and an analog-voltage stabilizing circuit configured to supply, when an analog voltage exceeds a predetermined value, the analog voltage as a power supply voltage for the pixels and supply, when the analog voltage is equal to or smaller than the predetermined value, the analog voltage as the power supply voltage for the pixels after boosting the analog voltage.

Abstract translation: 根据一个实施例，固态成像装置包括：像素阵列部分，其中累积光电转换电荷的像素以矩阵形状排列; 以及模拟电压稳定电路，被配置为当模拟电压超过预定值时，将所述模拟电压作为所述像素的电源电压提供，并且当所述模拟电压等于或小于所述预定值时，所述模拟电压稳定电路 电压作为升压模拟电压后像素的电源电压。

公开(公告)号：US20110221941A1

公开(公告)日：2011-09-15

申请号：US12980852

申请日：2010-12-29

Applicant: Maki SATO

Inventor： Maki SATO

IPC: H04N5/335

CPC classification number: H04N5/37457 ,  H04N5/3742 ,  H04N9/045

Abstract: According to one embodiment, a solid-state imaging device includes a pixel array, two signal lines and a row scanning circuit. The row scanning circuit simultaneously renders conductive, by the first read-out row scanning circuit and the second read-out row scanning circuit, the two transfer transistors, which are connected to two photoelectric conversion elements do not share a floating diffusion portion neighboring in the column direction, thereby reading out signals in parallel from the photoelectric conversion elements of the pixels of two rows of an odd-numbered row and an even-numbered row.

Abstract translation: 根据一个实施例，固态成像装置包括像素阵列，两条信号线和一行扫描电路。 行扫描电路通过第一读出行扫描电路和第二读出行扫描电路同时进行导通，连接到两个光电转换元件的两个传输晶体管不共享在 列方向，从而从奇数行和偶数行的两行的像素的光电转换元件并行读出信号。

公开(公告)号：US20120228474A1

公开(公告)日：2012-09-13

申请号：US13402269

申请日：2012-02-22

Applicant: Maki SATO

Inventor： Maki SATO

IPC: H01L27/146

CPC classification number: H01L27/14603 ,  H01L27/14641 ,  H04N5/37457 ,  H04N5/376

Abstract: While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor and a pixel amp transistor by adjacent cells in sharing pixel units. Further, it is possible to perform layout setting for the floating diffusions such that parasitic capacitances between the floating diffusions are equal to each other. It is possible to prevent step-like noise from occurring among the pixels while improving sensitivity.

Abstract translation: 虽然分离了复位晶体管的漏极电源和放大晶体管的漏极电源，但是可以通过共享复位晶体管的漏极扩散层和放大晶体管的漏极扩散层来降低漏极电源的负载，以及 由相邻单元共享像素单元的像素放大晶体管。 此外，可以对浮动扩散执行布置设置，使得浮置扩散之间的寄生电容彼此相等。 可以在提高灵敏度的同时防止像素之间发生阶梯状噪声。

公开(公告)号：US20120224089A1

公开(公告)日：2012-09-06

申请号：US13370710

申请日：2012-02-10

Applicant: Maki SATO

Inventor： Maki SATO

IPC: H04N5/335

CPC classification number: H01L27/14641 ,  H01L27/14603 ,  H01L27/14612 ,  H04N5/3452 ,  H04N5/347 ,  H04N5/37457

Abstract: While a drain power source of a reset transistor and a drain power source of an amplifying transistor are separated, the load of drain power source can be reduced by sharing a drain diffusion layer of the reset transistor and a drain diffusion layer of the amplifying transistor by adjacent cells in sharing pixel units. Further, an efficient pixel layout is provided by reducing the number of routing wires.

Abstract translation: 虽然分离了复位晶体管的漏极电源和放大晶体管的漏极电源，但是通过将复位晶体管的漏极扩散层和放大晶体管的漏极扩散层共享，可以减小漏极电源的负载 共享像素单位的相邻单元。 此外，通过减少路由线的数量来提供有效的像素布局。