公开(公告)号：US06841403B2

公开(公告)日：2005-01-11

申请号：US10348747

申请日：2003-01-21

申请人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

发明人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

IPC分类号： H01L21/00 ,  H01L21/66 ,  G06F19/00

CPC分类号： H01L21/67276 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

摘要翻译： 本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置，使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备，采取补救措施，以及 实现恒定和高收益。 本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性，分析评估的相似性的数据序列的循环性，评估从 根据制造线上每个制造设备的分析和处理方法，并推断或确定引起缺陷的因果过程和设备。

公开(公告)号：US06797526B2

公开(公告)日：2004-09-28

申请号：US10232871

申请日：2002-08-30

申请人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

发明人： Maki Tanaka ,  Shunji Maeda ,  Minori Noguchi ,  Takafumi Okabe ,  Yuji Takagi ,  Chie Shishido

IPC分类号： H01L2100

CPC分类号： H01L21/67276 ,  H01L22/20 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed herein is a method for manufacturing semiconductor device and a method and apparatus for processing detected defect data, making it possible to quickly infer or determine a process and related manufacturing equipment that causes defects in a fabrication line of semiconductor devices, take remedy action, and achieve a constant and high yield. The method of the invention comprises quantitatively evaluating similarity of a defects distribution on a wafer that suffered abnormal occurrence of defects to inspection results for wafers inspected in the past, analyzing cyclicity of data sequence of evaluated similarity, evaluating relationship between the cyclicity of defects obtained from the analysis and the process method according to each manufacturing equipment in the fabrication line, and inferring or determining a causal process and equipment that caused the defects.

摘要翻译： 本发明公开了一种用于制造半导体器件的方法和用于处理检测到的缺陷数据的方法和装置，使得可以快速推断或确定导致半导体器件制造线中的缺陷的处理和相关制造设备，采取补救措施，以及 实现恒定和高收益。 本发明的方法包括定量评估在异常发生缺陷的晶片上的缺陷分布与以往检查的晶片的检查结果的相似性，分析评估的相似性的数据序列的循环性，评估从 根据制造线上每个制造设备的分析和处理方法，并推断或确定引起缺陷的因果过程和设备。

公开(公告)号：US20070120078A1

公开(公告)日：2007-05-31

申请号：US11657689

申请日：2007-01-25

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N21/86 ,  G01V8/00

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： A method of measuring pattern dimensions includes evaluating a relationship between cross-sectional shapes of a pattern and measurement errors of a pattern in a specified image processing technique, and conducting an actual measurement in which dimension measurement of an evaluation objective pattern from image signals of a microscope is carried out, and revising errors of the dimension measurement of the evaluation objective pattern based on the relationship between the cross-sectional shapes of a pattern and the measurement errors of a pattern previously evaluated.

摘要翻译： 测量图案尺寸的方法包括评估图案的横截面形状与特定图像处理技术中的图案的测量误差之间的关系，并且进行实际测量，其中评估对象图案的尺寸测量从图像信号 基于图案的截面形状与先前评估的图案的测量误差之间的关系，进行显微镜的修正，并修正评价对象图案的尺寸测量的误差。

公开(公告)号：US07166839B2

公开(公告)日：2007-01-23

申请号：US11320752

申请日：2005-12-30

申请人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G21K7/00

CPC分类号： G01N23/225 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/2814 ,  H01L21/32137 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process. According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained. The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.

摘要翻译： 通常，没有以非破坏性的方式定量地评价蚀刻图案的三维形状的方法，并且确定蚀刻条件需要花费大量时间和成本。 仅使用常规的长度测量方法，就不可能检测到三维形状的异常，并且也难以控制蚀刻工艺。 根据本发明，利用SEM图像的信号量的变化来计算与蚀刻工艺步骤相关联的图案上的三维形状数据，从而定量评估三维形状。 此外，基于获得的三维形状数据进行蚀刻工艺条件和工艺控制的确定。 本发明能够以非破坏性的方式对蚀刻图案的三维形状进行定量评价。 此外，可以实现确定蚀刻工艺条件的效率和稳定的蚀刻工艺。

公开(公告)号：US06984589B2

公开(公告)日：2006-01-10

申请号：US10460217

申请日：2003-06-13

申请人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/306

CPC分类号： G01N23/225 ,  G01N23/2251 ,  H01J37/244 ,  H01J37/3171 ,  H01J2237/2814 ,  H01L21/32137 ,  H01L22/10 ,  H01L2924/0002 ,  H01L2924/00

摘要： Conventionally, there is no method for quantitatively evaluating the three-dimensional shape of an etched pattern in a non-destructive manner and it takes much time and costs to determine etching conditions. With the conventional length measuring method only, it has been impossible to detect an abnormality in the three-dimensional shape and also difficult to control the etching process.According to the present invention, variations in signal amounts of an SEM image are utilized to compute three-dimensional shape data on the pattern associated with the etching process steps, whereby the three-dimensional shape is quantitatively evaluated. Besides, determination of etching process conditions and process control are performed based on the three-dimensional shape data obtained.The present invention makes it is possible to quantitatively evaluate the three-dimensional shape of the etched pattern in a non-destructive manner. Further, the efficiency of determining the etching process conditions and a stable etching process can be realized.

摘要翻译： 通常，没有以非破坏性的方式定量地评价蚀刻图案的三维形状的方法，并且确定蚀刻条件需要花费大量时间和成本。 仅使用常规的长度测量方法，就不可能检测到三维形状的异常，并且也难以控制蚀刻工艺。 根据本发明，利用SEM图像的信号量的变化来计算与蚀刻工艺步骤相关联的图案上的三维形状数据，从而定量评估三维形状。 此外，基于获得的三维形状数据进行蚀刻工艺条件和工艺控制的确定。 本发明能够以非破坏性的方式对蚀刻图案的三维形状进行定量评价。 此外，可以实现确定蚀刻工艺条件的效率和稳定的蚀刻工艺。

公开(公告)号：US06587581B1

公开(公告)日：2003-07-01

申请号：US09006371

申请日：1998-01-12

申请人： Yukio Matsuyama ,  Yuji Takagi ,  Takashi Hiroi ,  Maki Tanaka ,  Asahiro Kuni ,  Junzou Azuma ,  Shunji Maeda ,  Chie Shishido

发明人： Yukio Matsuyama ,  Yuji Takagi ,  Takashi Hiroi ,  Maki Tanaka ,  Asahiro Kuni ,  Junzou Azuma ,  Shunji Maeda ,  Chie Shishido

IPC分类号： G06K900

CPC分类号： G06T7/001 ,  G01N21/8851 ,  G01N21/95607 ,  G06T5/008 ,  G06T5/40 ,  G06T5/50 ,  G06T7/30 ,  G06T2207/10061 ,  G06T2207/30148 ,  H01J37/222 ,  H01J37/28 ,  H01J2237/2817

摘要： The present invention provides a scanning electron microscope (SEM) or optical inspection method and apparatus which correct differences in brightness between comparison images and thus which is capable of detecting a fine defect with a high degree of reliability without causing any false defect detection. According to the present invention, the brightness values of a pattern, which should be essentially the same, contained in two detected images to be compared are corrected in such a manner that, even if there may be a brightness difference in a portion free from defects, the brightness difference is reduced to such a degree so that it can be recognized as a normal portion. Also, a limit for the amount of correction is furnished in advance, and correction exceeding such limit value is not performed. Such correction prevents the difference in brightness that should be permitted as non-defective from being falsely recognized as a defect without overlooking great differences in brightness due to a defect.

摘要翻译： 本发明提供了一种扫描电子显微镜（SEM）或光学检查方法和装置，其校正比较图像之间的亮度差异，从而能够以高可靠性检测精细缺陷而不引起任何假缺陷检测。 根据本发明，将要被比较的两个检测图像中包含的基本上相同的图案的亮度值以这样的方式进行校正：即使在没有缺陷的部分中可能存在亮度差 ，亮度差降低到这样的程度，从而可以将其识别为正常部分。 此外，预先提供校正量的限制，并且不执行超过该限制值的校正。 这样的校正可以防止由于缺陷而将不允许的亮度差错误地识别为缺陷，而不会因为缺陷而忽略亮度的很大差异。

公开(公告)号：US07335881B2

公开(公告)日：2008-02-26

申请号：US11019995

申请日：2004-12-23

申请人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/02 ,  G01B15/00

CPC分类号： G01N23/2251

摘要： With complexity of a process, the setting of conditions for pattern measurement by an SEM image falls into difficulties. However, the present invention aims to realize the setting of easy and reliable measuring conditions even with respect to a pattern complex in structure. Points characterized in terms of an SEM image signal are calculated as candidates for measurement values. The calculated candidates for measurement values are displayed with being superimposed on the SEM image. An operator selects the optimum one from the displayed candidates and thereby determines the optimum image processing condition for measurement. The relationship between the result of measurement under a predetermined image processing condition and pattern portions has been made clear using model data of a sectional shape and an electron beam simulation image.

摘要翻译： 由于处理的复杂性，通过SEM图像进行图案测定的条件的设定变得困难。 然而，本发明的目的在于即使对于结构上的图案复合体也能实现容易且可靠的测量条件的设定。 以SEM图像信号为特征的点被计算为测量值的候选。 计算出的测量值候选被叠加在SEM图像上。 操作者从所显示的候选者中选择最佳值，从而确定用于测量的最佳图像处理条件。 使用截面形状和电子束模拟图像的模型数据，在预定图像处理条件下的测量结果与图案部分之间的关​​系已经被清楚。

公开(公告)号：US07230239B2

公开(公告)日：2007-06-12

申请号：US10918381

申请日：2004-08-16

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G06T7/0004 ,  G01N23/225 ,  G01N2223/6116 ,  G06T2207/30148 ,  H01J2237/2814 ,  H01L22/12

摘要： A system for inspecting a pattern shape operates to detect secondary electrons from a specimen by irradiation of a focused electron beam and perform arithmetic processing on this detected signal. The detected signal waveform is divided into a plurality of regions on the basis of a variation of the signal quantity. The size of the divided regions is used for quantitative evaluation of a three dimensional shape of the specimen. This system, especially by displaying measurement results of the pattern shape for each divided signal waveform (bottom width in the final shape, resist bottom width, etching shift quantity, and etching slope-angle component by the exposure), permits an easy check on which a component varies and how the component varies in all shape variations. With this arrangement, a pattern cross section information effective in determining etching process conditions can be acquired using images by an in-line SEM capable of nondestructive observation.

摘要翻译： 用于检查图案形状的系统用于通过照射聚焦电子束来检测来自样品的二次电子，并对该检测信号进行运算处理。 检测信号波形根据信号量的变化被分成多个区域。 分割区域的大小用于样本的三维形状的定量评估。 该系统特别是通过显示每个分割信号波形（最终形状的底部宽度，抗蚀剂底部宽度，蚀刻偏移量和通过曝光的蚀刻倾斜角度分量）的图案形状的测量结果，可以容易地检查哪个 一个组件变化，以及组件在所有形状变化中的变化。 通过这种布置，可以通过能够进行非破坏性观察的直列SEM的图像来获取有效确定蚀刻工艺条件的图案横截面信息。

公开(公告)号：US07216311B2

公开(公告)日：2007-05-08

申请号：US10648231

申请日：2003-08-27

申请人： Maki Tanaka ,  Chie Shishido ,  Ryo Nakagaki ,  Yuji Takagi

发明人： Maki Tanaka ,  Chie Shishido ,  Ryo Nakagaki ,  Yuji Takagi

IPC分类号： G06F17/50 ,  G06F9/45 ,  G01N23/00

CPC分类号： H01L22/20 ,  G11C29/006 ,  G11C2029/0403 ,  G11C2029/5002 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to realize a means for acquiring three-dimensional shape information about patterns by nondestruction and evaluate a relationship between the three-dimensional shape information about these patterns and device properties, a semiconductor device pattern evaluating system is provided with a feature index calculating means for quantifying a property of a three-dimensional shape of a pattern to be evaluated, as feature index, a database that records therein a relationship between the feature index of each three-dimensional pattern shape and a device property of a circuit containing patterns each having the feature index, and a device property estimating means for estimating a property of a device circuit formed by the pattern to be evaluated, on the basis of the feature index of the three-dimensional pattern shape, which have been quantified by the feature index calculating means, and the information recorded in the database.

摘要翻译： 为了实现用于通过非破坏获取关于图案的三维形状信息的手段，并且评估关于这些图案的三维形状信息和装置特性之间的关系，半导体装置图案评估系统设置有特征指标计算装置， 量化要评估的图案的三维形状的属性作为特征索引，记录其中每个三维图案形状的特征索引与包含各自具有所述三维图案形状的图案的电路的装置特性之间的关系的数据库 特征索引，以及装置属性估计装置，用于根据由特征指标计算装置量化的三维图案形状的特征指标，估计由待评估图案形成的装置电路的特性 ，以及记录在数据库中的信息。

公开(公告)号：US07173268B2

公开(公告)日：2007-02-06

申请号：US10986910

申请日：2004-11-15

申请人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

发明人： Maki Tanaka ,  Hidetoshi Morokuma ,  Chie Shishido ,  Yuji Takagi

IPC分类号： G01N21/86

CPC分类号： H01J37/28 ,  H01J37/304 ,  H01J2237/2814 ,  H01J2237/2817 ,  H01J2237/30455

摘要： This invention provides a method of measuring semiconductor pattern dimensions capable of realizing a stable and highly precise pattern dimension measurement technique even when the pattern cross-sectional shapes are changed and making the calculation amount relatively small to reduce the calculation time. More specifically, the relationship between cross-sectional shapes of a pattern and measurement errors in a specified image processing technique is evaluated in advance by the electron beam simulation in a pattern measurement system in a length measuring SEM, and in the actual dimension measurement, dimensions of an evaluation objective pattern are measured from image signals of a scanning electron microscope, and errors of the dimensional measurement of the evaluation objective pattern are estimated and revised based on the relationship between cross-sectional shapes of a pattern and measurement errors evaluated in advance, thereby realizing highly precise measurement where dimensional errors depending on pattern solid shapes are eliminated.

摘要翻译： 本发明提供一种测量半导体图案尺寸的方法，即使当图案截面形状改变并使计算量相对较小以减少计算时间时，也能够实现稳定且高度精确的图案尺寸测量技术。 更具体地说，通过长度测量SEM中的图案测量系统中的电子束模拟预先评估图案的截面形状与特定图像处理技术中的测量误差之间的关系，并且在实际尺寸测量中，尺寸 根据扫描电子显微镜的图像信号测量评价对象图案，并且基于预先评估的图案的截面形状和测量误差之间的关系来估计和修正评估对象图案的尺寸测量的误差， 从而实现高精度测量，其中取消了取决于图形实心形状的尺寸误差。