公开(公告)号：US07116816B2

公开(公告)日：2006-10-03

申请号：US09793922

申请日：2001-02-28

申请人： Maki Tanaka ,  Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroshi Morioka ,  Kenji Watanabe ,  Hiroshi Miyai ,  Mari Nozoe

发明人： Maki Tanaka ,  Takashi Hiroi ,  Masahiro Watanabe ,  Chie Shishido ,  Hiroshi Morioka ,  Kenji Watanabe ,  Hiroshi Miyai ,  Mari Nozoe

IPC分类号： G06K9/00

CPC分类号： G06T7/001 ,  G06T2207/10056 ,  G06T2207/30121 ,  G06T2207/30148 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/2811 ,  H01J2237/2817

摘要： In order to enable the most suitable image processing condition to be set as one in which a dispersion in brightness between comparing images caused by object to be inspected and an image detecting system is not applied as a false information, in the present invention, there is obtained a noise characteristic of a secondary electron image caused by the image detecting system is calculated, the most suitable image processing parameters are determined depending on the object to be inspected on the basis of the characteristic, and its comparing processing is performed by using the noise characteristic and the image of the object to be inspected, thereby a dispersion in process for the object to be inspected is evaluated.

摘要翻译： 为了使最合适的图像处理条件被设置为将未被应用的被检查对象所引起的比较图像与图像检测系统之间的亮度的色散作为虚假信息，在本发明中，存在 计算出由图像检测系统引起的二次电子图像的噪声特性，根据特性根据被检查对象确定最合适的图像处理参数，并且通过使用噪声来执行其比较处理 特性和待检查对象的图像，从而评估待检查对象的分散处理。

公开(公告)号：US07116817B2

公开(公告)日：2006-10-03

申请号：US11235136

申请日：2005-09-27

申请人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

发明人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

IPC分类号： G06K9/00

CPC分类号： G01N23/2251

摘要： A method and apparatus for inspecting a wafer in which a focused charged particle beam is irradiated onto a surface of a wafer on which patterns are formed through a semiconductor device fabrication process, a secondary charged particle image of a desired area of the wafer is obtained by detecting secondary charged particles emitted from the surface of the wafer, and information about image feature amount of each pattern within the desired area from the obtained secondary charged particle beam image. The information about image feature amount is compared with a preset value, and on the basis of a result of the comparison, a quality of patterns which have been formed around the desired area is estimated, and information of a result of the estimation is outputted.

摘要翻译： 一种用于通过半导体器件制造工艺检查其中聚焦的带电粒子束照射到其上形成有图案的晶片的表面上的晶片的方法和装置，通过以下方式获得晶片的期望区域的二次带电粒子图像： 从所获得的二次带电粒子束图像中检测从所述晶片的表面发射的次级带电粒子和关于期望区域内的每个图案的图像特征量的信息。 将关于图像特征量的信息与预设值进行比较，并且基于比较结果，估计在期望区域周围形成的图案的质量，并且输出估计结果的信息。

公开(公告)号：US06952492B2

公开(公告)日：2005-10-04

申请号：US09942213

申请日：2001-08-30

申请人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

发明人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

IPC分类号： G01R31/302 ,  G01N23/225 ,  G01Q20/04 ,  G01Q30/04 ,  H01L21/027 ,  H01L21/66 ,  G06K9/00

CPC分类号： G01N23/2251

摘要： A method and apparatus for inspecting a semiconductor device in which failure occurence conditions on a whole wafer are estimated by calculating the statistic of potential contrasts in pattern sections from sampled images to implement higher throughput, and defective conditions of a process are detected at an early stage with the help of time series data of the estimate result.

摘要翻译： 通过从采样图像计算图案部分中的潜在对比度的统计量来估计在整个晶片上发生故障的半导体器件的方法和装置，以实现更高的吞吐量，并且早期检测到处理的缺陷条件 在估计结果的时间序列数据的帮助下。

公开(公告)号：US06613593B2

公开(公告)日：2003-09-02

申请号：US09942862

申请日：2001-08-31

申请人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

发明人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

IPC分类号： G01R3126

CPC分类号： G01N23/2251

摘要： A method and apparatus for inspecting a semiconductor device in which failure occurrence conditions on a whole wafer are estimated by calculating the statistic of potential contrasts in pattern sections from sampled images to implement higher throughput, and defective conditions of a process are detected at an early stage with the help of time series data of the estimated result.

摘要翻译： 通过从采样图像中计算图案部分中的潜在对比度的统计量来估计半导体装置的检查方法和装置，其中通过计算采样图像中的图形部分的电位对比度的统计量来估计整个晶片的故障发生状况，以实现更高的吞吐量， 在估计结果的时间序列数据的帮助下。

公开(公告)号：US20060018532A1

公开(公告)日：2006-01-26

申请号：US11235136

申请日：2005-09-27

申请人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

发明人： Maki Tanaka ,  Masahiro Watanabe ,  Kenji Watanabe ,  Mari Nozoe ,  Hiroshi Miyai

IPC分类号： G06K9/00

CPC分类号： G01N23/2251

摘要： A method and apparatus for inspecting a wafer in which a focused charged particle beam is irradiated onto a surface of a wafer on which patterns are formed through a semiconductor device fabrication process, a secondary charged particle image of a desired area of the wafer is obtained by detecting secondary charged particles emitted from the surface of the wafer, and information about image feature amount of each pattern within the desired area from the obtained secondary charged particle beam image. The information about image feature amount is compared with a preset value, and on the basis of a result of the comparison, a quality of patterns which have been formed around the desired area is estimated, and information of a result of the estimation is outputted.

公开(公告)号：US06583634B1

公开(公告)日：2003-06-24

申请号：US09559563

申请日：2000-04-27

申请人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

发明人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

IPC分类号： G01R31305

CPC分类号： H01J37/28 ,  G01R31/307 ,  G09G3/006 ,  H01J37/265 ,  H01J2237/221 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection device for irradiating the electron beam 19 to the sample board 9 which is a sample, detecting generated secondary electrons by the detector 7, storing obtained signals sequentially in the storage, comparing the same pattern stored in the storage by the comparison calculation unit, and extracting a failure by comparing the predetermined threshold value with the comparison signal by the failure decision unit is provided, wherein the optimum value of the irradiation energy is stored in the data base inside the device beforehand according to the structure of a sample and a recommended value of the irradiation energy suited to inspection can be searched for by inputting or selecting the irradiation energy by a user or inputting information regarding the structure of an article to be inspected.

摘要翻译： 为了根据要检查的电路图案的材料和结构获得电子束的最佳照射条件以及在最佳条件下无故障检测的种类和检查时间的延迟，检查装置 将电子束19照射到作为样本的样品板9，由检测器7检测产生的二次电子，将获得的信号顺序地存储在存储器中，比较由比较计算单元存储在存储器中的相同模式，并提取故障 提供了通过故障判定单元将预定阈值与比较信号进行比较，其中根据样本的结构和照射的推荐值，将照射能量的最佳值预先存储在设备内部的数据库中 可以通过使用照射能量的输入或选择来搜索适合于检查的能量 或输入关于被检查物品的结构的信息。

公开(公告)号：US06703850B2

公开(公告)日：2004-03-09

申请号：US10430188

申请日：2003-05-07

申请人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

发明人： Mari Nozoe ,  Hiroyuki Shinada ,  Kenji Watanabe ,  Keiichi Saiki ,  Aritoshi Sugimoto ,  Hiroshi Morioka ,  Maki Tanaka ,  Hiroshi Miyai

IPC分类号： G01R31305

CPC分类号： H01J37/28 ,  G01R31/307 ,  G09G3/006 ,  H01J37/265 ,  H01J2237/221 ,  H01J2237/2817 ,  H01L22/12 ,  H01L2924/0002 ,  H01L2924/00

摘要： In order to obtain optimum irradiation conditions of an electron beam according to the material and structure of a circuit pattern to be inspected and the kind of a failure to be detected and inspect under the optimum conditions without delay of the inspection time, an inspection device for irradiating the electron beam 19 to the sample board 9 which is a sample, detecting generated secondary electrons by the detector 7, storing obtained signals sequentially in the storage, comparing the same pattern stored in the storage by the comparison calculation unit, and extracting a failure by comparing the predetermined threshold value with the comparison signal by the failure decision unit is provided, wherein the optimum value of the irradiation energy is stored in the data base inside the device beforehand according to the structure of a sample and a recommended value of the irradiation energy suited to inspection can be searched for by inputting or selecting the irradiation energy by a user or inputting information regarding the structure of an article to be inspected.

摘要翻译： 为了根据要检查的电路图案的材料和结构获得电子束的最佳照射条件以及在最佳条件下无故障检测的种类和检查时间的延迟，检查装置 将电子束19照射到作为样本的样品板9，由检测器7检测产生的二次电子，将获得的信号顺序地存储在存储器中，比较由比较计算单元存储在存储器中的相同模式，并提取故障 提供了通过故障判定单元将预定阈值与比较信号进行比较，其中根据样本的结构和照射的推荐值，将照射能量的最佳值预先存储在设备内部的数据库中 可以通过使用照射能量的输入或选择来搜索适合于检查的能量 或输入关于被检查物品的结构的信息。

公开(公告)号：US07112791B2

公开(公告)日：2006-09-26

申请号：US10916451

申请日：2004-08-12

申请人： Mari Nozoe ,  Hidetoshi Nishiyama ,  Shigeaki Hijikata ,  Kenji Watanabe ,  Koji Abe

发明人： Mari Nozoe ,  Hidetoshi Nishiyama ,  Shigeaki Hijikata ,  Kenji Watanabe ,  Koji Abe

IPC分类号： H01J37/00 ,  H01J37/256

CPC分类号： G06T7/0004 ,  G01N23/20 ,  G06T2207/30148 ,  H01J2237/2487 ,  H01J2237/2817

摘要： A sample inspection system having a sample stage holding a sample to be inspected, electron beam optics so as to radiate an electron beam to the sample, a detector unit that detects a secondly generated signal generated in response to radiation of the sample by the electron beam, a storage for storing a plurality of images obtained from the generated signal and information for classifying the plurality of images by a type of defect in the sample, and an image processing unit. The image processing unit retrieves any of the plurality of images and classifies the retrieved image depending on the type of defect including an electrical defect and a defect in the figure.

摘要翻译： 具有保持要检查的样品的样品台的样品检查系统，电子束光学以便向样品辐射电子束的检测器单元，检测器单元，其检测响应于通过电子束的样品的辐射而产生的第二生成的信号 用于存储从所生成的信号获得的多个图像的存储器和用于通过样本中的缺陷类型对所述多个图像进行分类的信息，以及图像处理单元。 图像处理单元检索多个图像中的任一个，并且根据包括图中的电缺陷和缺陷的缺陷的类型对检索到的图像进行分类。

公开(公告)号：US06542830B1

公开(公告)日：2003-04-01

申请号：US09142546

申请日：1998-09-10

申请人： Fumio Mizuno ,  Seiji Isogai ,  Kenji Watanabe ,  Yasuhiro Yoshitake ,  Terushige Asakawa ,  Yuichi Ohyama ,  Hidekuni Sugimoto ,  Seiji Ishikawa ,  Masataka Shiba ,  Jun Nakazato ,  Makoto Ariga ,  Tetsuji Yokouchi ,  Toshimitsu Hamada ,  Ikuo Suzuki ,  Masami Ikota ,  Mari Nozoe ,  Isao Miyazaki ,  Yoshiharu Shigyo

发明人： Fumio Mizuno ,  Seiji Isogai ,  Kenji Watanabe ,  Yasuhiro Yoshitake ,  Terushige Asakawa ,  Yuichi Ohyama ,  Hidekuni Sugimoto ,  Seiji Ishikawa ,  Masataka Shiba ,  Jun Nakazato ,  Makoto Ariga ,  Tetsuji Yokouchi ,  Toshimitsu Hamada ,  Ikuo Suzuki ,  Masami Ikota ,  Mari Nozoe ,  Isao Miyazaki ,  Yoshiharu Shigyo

IPC分类号： H01L2166

CPC分类号： H01L22/20 ,  G01N21/9501 ,  G01R31/2894 ,  G01R33/06 ,  H01L2223/54466 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process management system in accordance with the present invention includes inspection apparatuses for inspecting defects on a wafer, the inspection apparatuses being connected through a communication network, inspection information and image information obtained from these inspection apparatuses being collected to construct a data base and an image file, therein definition of defects is given by combinations of elements which characterize the defect based on the inspection information and the image information obtained from the inspection apparatuses. By giving definition of the defect, characteristics of the defect can be subdivided and known. Therefore, the cause of a defect can be studied.

摘要翻译： 根据本发明的处理管理系统包括用于检查晶片上的缺陷的检查装置，通过通信网络连接的检查装置，从这些检查装置获得的检查信息和图像信息被收集以构建数据库和图像 文件，其中缺陷的定义通过基于检查信息和从检查装置获得的图像信息来表征缺陷的元件的组合来给出。 通过给出缺陷的定义，可以细分和知道缺陷的特征。 因此，可以研究缺陷的原因。

公开(公告)号：US20070023658A1

公开(公告)日：2007-02-01

申请号：US11518893

申请日：2006-09-12

申请人： Mari Nozoe ,  Hidetoshi Nishiyama ,  Shigeaki Hijikata ,  Kenji Watanabe ,  Koji Abe

发明人： Mari Nozoe ,  Hidetoshi Nishiyama ,  Shigeaki Hijikata ,  Kenji Watanabe ,  Koji Abe

IPC分类号： G21K7/00

CPC分类号： G06T7/0004 ,  G01N23/20 ,  G06T2207/30148 ,  H01J2237/2487 ,  H01J2237/2817

摘要： An electron beam apparatus equipped with a review function of a semiconductor wafer includes a scanning electron microscope to obtain image information of a semiconductor wafer, and an information processing apparatus to process the image information. The information processing apparatus includes a data input unit to receive positional information of a defect on the wafer, a storage for storing a plurality of image information of a position on the wafer corresponding to the positional information, and an image processing unit that retrieves any of the plurality of image information, and classifies the retrieved image information corresponding to the positional information depending on the type of defect.

摘要翻译： 配备有半导体晶片的检查功能的电子束装置包括扫描电子显微镜以获得半导体晶片的图像信息，以及处理图像信息的信息处理装置。 信息处理装置包括：数据输入单元，用于接收晶片上的缺陷的位置信息，存储用于存储与位置信息对应的晶片上的位置的多个图像信息;以及图像处理单元， 多个图像信息，并且根据缺陷的类型对与位置信息相对应的检索到的图像信息进行分类。