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公开(公告)号：US4616144A
公开(公告)日：1986-10-07
申请号：US680659
申请日：1984-12-12
IPC分类号： H03K17/082 , H03K17/615 , H03K19/08
CPC分类号： H03K17/615 , H03K17/0826
摘要： A high withstand voltage Darlington transistor circuit is comprised of a Darlington transistor and a bypass circuit. This bypass circuit is comprised of a bypass transistor whose collector is connected to the base of an earlier stage transistor of the transistors which make up the Darlington transistor and whose emitter is connected to the base of a later stage transistor. The base of the bypass transistor is connected to the collector of the Darlington transistor via a diode and the resistor. When the collector-emitter voltage of the Darlington transistor crosses a specified value, the bypass transistor operates and a base current of the Darlington transistor is supplied to the base of the later stage transistor without being supplied to the earlier stage transistor. The result is that the current amplification ratio of the Darlington transistor is substantially decreased, and the withstand voltage is substantially increased.
摘要翻译： 高耐压达林顿晶体管电路由达林顿晶体管和旁路电路组成。 该旁路电路由旁路晶体管组成，其旁路晶体管的集电极连接到构成达林顿晶体管的晶体管的前级晶体管的基极，其发射极连接到后级晶体管的基极。 旁路晶体管的基极通过二极管和电阻连接到达林顿晶体管的集电极。 当达林顿晶体管的集电极 - 发射极电压超过规定值时，旁路晶体管工作，并且将达林顿晶体管的基极电流提供给后级晶体管的基极，而不会提供给前级晶体管。 结果是达林顿晶体管的电流放大率显着降低，并且耐电压显着增加。
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公开(公告)号：USD543995S1
公开(公告)日：2007-06-05
申请号：US29264371
申请日：2006-08-08
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公开(公告)号：US20070277772A1
公开(公告)日：2007-12-06
申请号：US11704043
申请日：2007-02-08
IPC分类号： F02B65/00
摘要： The present invention provides a protective cover structure for a rammer for which a guard cover plate of a power engine in a rammer is molded from a synthetic resin allowing any shape to be freely obtained and having small weight, high strength, and impact absorption ability. The cover plate is configured so that it can be assembled and disassembled by simple operations, has good endurance with respect to severe vibrations and can reduce the damage of the machine body due to the adequate impact absorption ability even when the rammer tumbles.Front end sections of guard covers disposed on both sides of a power engine are joined and fixed to the front surface section of the crank chamber, lower sections of the rear portions are supported by support frames of a protective stand provided at the lower surface of the power engine, and the rear sections of the rear portions are linked integrally by a linking transverse pole.
摘要翻译： 本发明提供了一种用于夯锤的保护盖结构，其中由合成树脂模制夯锤中的动力发动机的防护罩板，允许任意形状自由地获得并具有小重量，高强度和冲击吸收能力。 盖板的构造使得可以通过简单的操作来组装和拆卸，相对于严重的振动具有良好的耐久性，并且即使当夯锤翻滚时也可以由于足够的冲击吸收能力而减少机体的损坏。 配置在动力发动机两侧的防护罩的前端部分接合并固定在曲柄室的前表面部分上，后部的下部由设置在该发动机的下表面的保护架的支撑框架支撑 动力发动机，并且后部的后部通过连接横杆连接成一体。
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公开(公告)号：USD542810S1
公开(公告)日：2007-05-15
申请号：US29264368
申请日：2006-08-08
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5.发明授权Junction type field effect transistor with source at oxide-gate interface depth to maximize .mu. 失效具有源极的结型场效应晶体管，在氧化物 - 栅极界面深度最大化
公开(公告)号：US4284998A
公开(公告)日：1981-08-18
申请号：US937570
申请日：1978-08-28
申请人： Noboru Fuse , Kenichi Muramoto , Keizo Tani , Masaaki Iwanishi
发明人： Noboru Fuse , Kenichi Muramoto , Keizo Tani , Masaaki Iwanishi
IPC分类号： H01L29/80 , H01L29/06 , H01L29/772
CPC分类号： H01L29/7722 , H01L29/0653
摘要： A junction type field effect transistor comprises a semiconductor layer of one conductivity type acting as a drain region, a source region of said one conductivity type formed to a prescribed depth from the surface of the semiconductor layer, an insulation layer formed to a prescribed depth from the surface of the semiconductor layer to surround the source region, and a gate region of the opposite conductivity type formed in the proximity of the sorce region. The insulation layer and source region are formed to substantially the same depth.
摘要翻译： 结型场效应晶体管包括用作漏极区的一种导电类型的半导体层，从半导体层的表面形成到规定深度的所述一种导电类型的源极区，形成为规定深度的绝缘层 围绕源极区域的半导体层的表面以及形成在吸附区域附近的相反导电类型的栅极区域。 绝缘层和源极区域形成为基本上相同的深度。
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公开(公告)号：US4041517A
公开(公告)日：1977-08-09
申请号：US604024
申请日：1975-08-12
申请人： Noboru Fuse , Kenichi Muramoto
发明人： Noboru Fuse , Kenichi Muramoto
IPC分类号： H01L21/225 , H01L29/808 , H01L29/80 , H01L27/02
CPC分类号： H01L29/8083 , H01L21/2255
摘要： A vertical type junction field effect transistor is disclosed having a body of semiconductor material of a first conductive type, a source region of the first conductive type provided in a main face of the body and a drain region of the first conductive type disposed opposite to the source region. A gate region of a second conductive type opposite to the first conductive type is disposed in direct contact with the source region and surrounds the source region in the form of a closed loop. A channel region extends from the source region towards the drain region and has a varying width in the vicinity of the source region according to the change of a depletion layer upon voltage application to the gate region.
摘要翻译： 公开了一种垂直型结型场效应晶体管，其具有第一导电类型的半导体材料体，设置在主体的主面中的第一导电类型的源极区域和与第一导电类型相对设置的第一导电类型的漏极区域 源区。 与第一导电类型相反的第二导电类型的栅极区域设置成与源极区域直接接触并且以闭环的形式围绕源极区域。 沟道区域从源极区域延伸到漏极区域，并且在施加到栅极区域时根据耗尽层的变化在源极区域附近具有变化的宽度。
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公开(公告)号：US4716489A
公开(公告)日：1987-12-29
申请号：US813841
申请日：1985-12-27
申请人： Kaoru Imamura , Kenichi Muramoto
发明人： Kaoru Imamura , Kenichi Muramoto
IPC分类号： H01L27/06 , H01L21/331 , H01L27/02 , H01L29/73 , H01L29/732 , H02H3/20
CPC分类号： H01L29/7302 , H01L27/0248
摘要： A protection circuit is provided for a planar transistor device. The protection circuit comprises a variable resistor device formed of a junction type field effect transistor. The resistor device is connected in series with the base of the planar transistor. The drain electrode of the J-FET is connected to the base of the planar transistor while the collector of the planar transistor is connected to the gate of the J-FET. Due to this interconnected scheme, base input resistance of the planar transistor is increased to reduce its base current when a high voltage is applied accidentally to the collector. The base current is not eliminated, however, and the device is protected but can still operate.
摘要翻译： 为平面晶体管器件提供保护电路。 保护电路包括由结型场效应晶体管形成的可变电阻器件。 电阻器件与平面晶体管的基极串联连接。 J-FET的漏电极连接到平面晶体管的基极，而平面晶体管的集电极连接到J-FET的栅极。 由于这种相互连接的方案，当将高电压意外施加到集电极时，平面晶体管的基极输入电阻增加以降低其基极电流。 然而，基极电流不被消除，器件受到保护但仍可以工作。
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公开(公告)号：USD571826S1
公开(公告)日：2008-06-24
申请号：US29264373
申请日：2006-08-08
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公开(公告)号：US20070234999A1
公开(公告)日：2007-10-11
申请号：US11651679
申请日：2007-01-10
CPC分类号： F02D11/02
摘要： An engine stop switch and a fuel open-close lock are accommodated in a throttle lever case so that they can be easily disassembled, and the engine stop switch is turned on and off and the fuel open-close cock is opened and closed adequately by the actuation of a rotary valve in response to the turning of a lever.An engine stop switch and a fuel open-close lock are integrally incorporated in a throttle lever case, a partially toothless driven gear is intermittently rotated via a partially toothless drive gear 4 rotated by a lever 6, and the intermittent rotation of the partially toothless driven gear turns on/off the engine stop switch and opens/closes the fuel open/close cock.
摘要翻译： 发动机停止开关和燃料开关锁被容纳在节气门杆壳体中，使得它们可以容易地拆卸，并且发动机停止开关被打开和关闭，并且燃料开闭阀门被充分地打开和关闭 响应于杆的转动致动旋转阀。 发动机停止开关和燃料开关锁一体地并入节流杆壳体中，部分无齿从动齿轮通过由杆6旋转的部分无齿驱动齿轮4而间歇地旋转，部分无齿驱动 齿轮打开/关闭发动机停止开关，并打开/关闭燃油打开/关闭旋塞。
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公开(公告)号：US20070137975A1
公开(公告)日：2007-06-21
申请号：US11604042
申请日：2006-11-22
IPC分类号： F16D43/18
摘要： In a vibration compaction machine such as a rammer, a lining wear dust is prevented from accumulating inside a clutch drum due to oblique attachment of a centrifugal clutch, such that the input shaft side is high and the output shaft side is low because of a forward tilted posture of the machine body.Discharge ports for a lining wear dust are opened with a spacing therebetween in a corner section of a disk-shaped wall surface and an annular circumferential surface of a clutch drum in a centrifugal clutch that is disposed obliquely so that the input shaft is high and an output shaft is low, the discharge ports being obtained by cutting out portions of the annular circumferential surface close to the corner section.
摘要翻译： 在诸如夯锤的振动压实机中，由于离心式离合器的倾斜安装，防止内衬磨损灰尘积聚在离合器鼓内部，使得输入轴侧高，输出轴侧由于向前 倾斜姿势的机身。 用于衬里磨损灰尘的排放口在盘形壁表面的角部和离心式离合器中的离合器鼓的环形圆周表面之间间隔开，倾斜地设置成使得输入轴高，并且 输出轴低，通过切除靠近拐角部分的环形周向表面的部分而获得排出口。
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