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122 条记录 (耗时 0.036 秒)

    Chemically amplified resist
    1.
    发明授权
    Chemically amplified resist 失效
    化学放大抗蚀剂

    公开(公告)号：US5580695A

    公开(公告)日：1996-12-03

    申请号：US339289

    申请日：1994-11-10

    申请人： Makoto Murata ,  Takao Miura ,  Yoshiji Yumoto ,  Toshiyuki Ota ,  Eiichi Kobayashi

    发明人： Makoto Murata ,  Takao Miura ,  Yoshiji Yumoto ,  Toshiyuki Ota ,  Eiichi Kobayashi

    IPC分类号： G03F7/004 ,  G03C1/73 ,  G03F7/038

    CPC分类号： G03F7/0045 ,  Y10S430/118 ,  Y10S430/121

    摘要： A chemically amplified resist comprising an alkali-soluble resin or a resin having at least one acid-dissociable group which is alkali-insoluble or -sprairingly soluble but becomes alkali-soluble upon dissociation of said acid dissociable group due to an acid; a radiation-sensitive, acid-generating agent; and an optional component in which resist, the radiation-sensitive, acid-generating agent generates an acid upon irradiation with a radiation in the irradiated portion and the solubility of the resin component and optional component in a developing solution is varied in the irradiated portion by a chemical reaction caused by the catalytic action of the acid, whereby a pattern is formed, characterized in that a compound having a nitrogen-containing basic group is contained in the resist. Said resist is superior in developability, pattern form, resolution, focus tolerance and yield of residual film thickness, has good process stability, and can be suitably used even in irradiation with, in particular, a radiation having a wavelength equal to or smaller than far ultraviolet rays, for example, an excimer laser or the like.

    摘要翻译： 一种化学放大抗蚀剂，其包含碱溶性树脂或具有至少一种酸解离基团的树脂，所述酸解离基团是由于酸而导致的所述酸解离基团的解离时为碱不溶性或易溶性但是变得碱溶性的; 辐射敏感的酸产生剂; 以及任选的组分，其中抗辐射敏感的酸产生剂在照射部分中的辐射照射时产生酸，并且树脂组分和任选组分在显影溶液中的溶解度在照射部分中变化 由酸的催化作用引起的化学反应，由此形成图案，其特征在于在抗蚀剂中含有具有含氮碱性基团的化合物。 所述抗蚀剂的显影性，图案形式，分辨率，聚焦容限和残留膜厚度的产率优异，具有良好的工艺稳定性，并且可以适用于特别是具有等于或小于远的波长的辐射 紫外线，例如准分子激光等。

    Radiation-sensitive composition
    2.
    发明授权
    Radiation-sensitive composition 失效
    辐射敏感组合物

    公开(公告)号：US5332650A

    公开(公告)日：1994-07-26

    申请号：US941264

    申请日：1992-09-04

    申请人： Makoto Murata ,  Mikio Yamachika ,  Yoshiji Yumoto ,  Takao Miura

    发明人： Makoto Murata ,  Mikio Yamachika ,  Yoshiji Yumoto ,  Takao Miura

    IPC分类号： G03F7/039 ,  G03F7/004 ,  G03C1/52 ,  G03F7/023

    CPC分类号： G03F7/039 ,  Y10S430/111 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126

    摘要： A radiation-sensitive composition comprising (A) a polymer having a recurring unit represented by formula (1): ##STR1## wherein R.sup.1 represents a substituted methyl group, a substituted ethyl group, a silyl group, a germyl group or an alkoxycarbonyl group, and R.sup.2 represents --OR.sup.3 or --NR.sup.4 R.sup.5 in which R.sup.3 is a hydrogen atom, a straight-chain alkyl group, a cyclic alkyl group, an aryl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, a silyl group, a germyl group or an alkoxycarbonyl group, and R.sup.4 and R.sup.5 which may be the same or different, are hydrogen atoms, straight-chain alkyl groups, cyclic alkyl groups, aralkyl groups or aryl groups, and (B) a radiation-sensitive acid forming agent. Said radiation-sensitive composition can be suitably used as a resist composition which enables reliable fine processing, which has high sensitivity and high resolution degree, and which is superior in dry etching resistance, developability, adhesiveness, heat resistance and yield of residual film thickness.

    摘要翻译： 一种辐射敏感性组合物，其包含（A）具有由式（1）表示的重复单元的聚合物：其中R1表示取代的甲基，取代的乙基，甲硅烷基，甲锗烷基或 烷氧基羰基，R 2表示-OR 3或-NR 4 R 5，其中R 3为氢原子，直链烷基，环烷基，芳基，芳烷基，取代甲基，取代乙基， 甲硅烷基，甲锗烷基或烷氧基羰基，R 4和R 5可以相同或不同，为氢原子，直链烷基，环烷基，芳烷基或芳基，（B） 敏感的酸成型剂。 所述辐射敏感性组合物可以适当地用作能够进行可靠的精细加工的抗蚀剂组合物，其具有高灵敏度和高分辨度，并且其耐干蚀刻性，显影性，粘合性，耐热性和残留膜厚度的产率优异。

    Radiation-sensitive composition
    3.
    发明授权
    Radiation-sensitive composition 失效
    辐射敏感组合物

    公开(公告)号：US5482816A

    公开(公告)日：1996-01-09

    申请号：US263421

    申请日：1994-06-21

    申请人： Makoto Murata ,  Mikio Yamachika ,  Yoshiji Yumoto ,  Takao Miura

    发明人： Makoto Murata ,  Mikio Yamachika ,  Yoshiji Yumoto ,  Takao Miura

    IPC分类号： G03F7/039 ,  G03F7/004 ,  G03C1/52 ,  G03F7/023

    CPC分类号： G03F7/039 ,  Y10S430/111 ,  Y10S430/121 ,  Y10S430/122 ,  Y10S430/126

    摘要： A radiation-sensitive composition comprising (A) a polymer having a recurring unit represented by formula (1): ##STR1## wherein R.sup.1 represents a substituted methyl group, a substituted ethyl group, a silyl group, a germyl group or an alkoxycarbonyl group, and R.sup.2 represents --OR.sup.3 or --NR.sup.4 R.sup.5 in which R.sup.3 is a hydrogen atom, a straight-chain alkyl group, a cyclic alkyl group, an aryl group, an aralkyl group, a substituted methyl group, a substituted ethyl group, a silyl group, a germyl group or an alkoxycarbonyl group, and R.sup.4 and R.sup.5, which may be the same or different, are hydrogen atoms, straight-chain alkyl groups, cyclic alkyl groups, aralkyl groups or aryl groups, and (B) a radiation-sensitive acid forming agent. Said radiation-sensitive composition can be suitably used as a resist composition which enables reliable fine processing, which has high sensitivity and high resolution degree, and which is superior in dry etching resistance, develop-ability, adhesiveness, heat resistance and yield of residual film thickness.

    摘要翻译： 一种辐射敏感性组合物，其包含（A）具有由式（1）表示的重复单元的聚合物：其中R1表示取代的甲基，取代的乙基，甲硅烷基，甲锗烷基或 烷氧基羰基，R 2表示-OR 3或-NR 4 R 5，其中R 3为氢原子，直链烷基，环烷基，芳基，芳烷基，取代甲基，取代乙基， 甲硅烷基，甲锗烷基或烷氧基羰基，R 4和R 5可以相同或不同，为氢原子，直链烷基，环烷基，芳烷基或芳基，（B）辐射 敏感性酸形成剂。 所述辐射敏感性组合物可以适当地用作能够进行可靠的精细加工的抗蚀剂组合物，其具有高灵敏度和高分辨度，并且其耐干蚀刻性，显影性，粘合性，耐热性和残留膜的产率优异 厚度。

    Chemically amplified resist composition
    4.
    发明授权
    Chemically amplified resist composition 有权
    化学放大抗蚀剂组合物

    公开(公告)号：US6114086A

    公开(公告)日：2000-09-05

    申请号：US288848

    申请日：1999-04-09

    申请人： Eiichi Kobayashi ,  Makoto Murata ,  Toshiyuki Ota ,  Akira Tsuji

    发明人： Eiichi Kobayashi ,  Makoto Murata ,  Toshiyuki Ota ,  Akira Tsuji

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0048 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111

    摘要： Positive-tone and negative-tone chemically amplified resist compositions comprising: (a-1) a blocked resin, (a-2) a combination of an alkali-soluble resin and a dissolution controlling agents, or (a-3) a combination of an alkali-soluble resin and a crosslinking agent, (b) a photoacid generator, and (c) specific kinds of solvents. The both positive-tone and negative-tone resist compositions exhibits superior sensitivity, high resolution capability, and excellent storage stability, and can be excellently applied especially to large sized substrates by spincoating for producing excellently shaped patterns by irradiation. The compositions can be used with advantage as a chemically amplified resist for the manufacture of semiconductor devices or integrated circuits (ICs).

    摘要翻译： 正色调和负色度化学放大抗蚀剂组合物，其包含：（a-1）封端树脂，（a-2）碱溶性树脂和溶解控制剂的组合，或（a-3） 碱溶性树脂和交联剂，（b）光致酸发生剂，和（c）特定种类的溶剂。 正色调和负色调抗蚀剂组合物显示出优异的灵敏度，高分辨能力和优异的储存稳定性，并且可以通过旋涂来优异地应用于大尺寸基材，以通过照射制造出优异的图案。 组合物可以有利地用作制造半导体器件或集成电路（IC）的化学放大抗蚀剂。

    Chemically amplified resist composition
    6.
    发明授权
    Chemically amplified resist composition 失效
    化学扩增抗蚀剂组合物

    公开(公告)号：US5629135A

    公开(公告)日：1997-05-13

    申请号：US590677

    申请日：1996-01-29

    申请人： Eiichi Kobayashi ,  Makoto Murata ,  Toshiyuki Ota ,  Akira Tsuji

    发明人： Eiichi Kobayashi ,  Makoto Murata ,  Toshiyuki Ota ,  Akira Tsuji

    IPC分类号： G03F7/004 ,  G03F7/039

    CPC分类号： G03F7/039 ,  G03F7/0048 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111

    摘要： Positive-tone and negative-tone chemically amplified resist compositions comprising: (a-1) a blocked resin, (a-2) a combination of an alkali-soluble resin and a dissolution controlling agents, or (a-3) a combination of an alkali-soluble resin and a crosslinking agent, (b) a photoacid generator, and (c) specific kinds of solvents. The both positive-tone and negative-tone resist compositions exhibits superior sensitivity, high resolution capability, and excellent storage stability, and can be excellently applied especially to large sized substrates by spincoating for producing excellently shaped patterns by irradiation. The compositions can be used with advantage as a chemically amplified resist for the manufacture of semiconductor devices or integrated circuits (ICs).

    摘要翻译： 正色调和负色度化学放大抗蚀剂组合物，其包含：（a-1）封端树脂，（a-2）碱溶性树脂和溶解控制剂的组合，或（a-3） 碱溶性树脂和交联剂，（b）光致酸发生剂，和（c）特定种类的溶剂。 正色调和负色调抗蚀剂组合物显示出优异的灵敏度，高分辨能力和优异的储存稳定性，并且可以通过旋涂来优异地应用于大尺寸基材，以通过照射制造出优异的图案。 组合物可以有利地用作制造半导体器件或集成电路（IC）的化学放大抗蚀剂。

    Radiation-sensitive resin composition
    7.
    发明授权
    Radiation-sensitive resin composition 有权
    辐射敏感树脂组合物

    公开(公告)号：US06899989B2

    公开(公告)日：2005-05-31

    申请号：US09987916

    申请日：2001-11-16

    申请人： Aki Suzuki ,  Makoto Murata ,  Hiromichi Hara ,  Eiichi Kobayashi

    发明人： Aki Suzuki ,  Makoto Murata ,  Hiromichi Hara ,  Eiichi Kobayashi

    IPC分类号： C08K5/375 ,  C08K5/42 ,  C08L25/18 ,  C09K3/00 ,  G03F7/004 ,  G03F7/039 ,  H01L21/027

    CPC分类号： G03F7/0392 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/114 ,  Y10S430/115 ,  Y10S430/118 ,  Y10S430/122

    摘要： A radiation-sensitive resin composition comprising (A) a photoacid generator such as 2,4,6-trimethylphenyldiphenylsulfonium 2,4-difluorobenzenesulfonate or 2,4,6-trimethylphenyldiphenylsulfonium 4-trifluoromethylbenzenesulfonate and (B) a resin having an acetal structure typified by a poly(p-hydroxystyrene) resin in which a part of hydrogen atoms of phenolic hydroxyl groups have been replaced by 1-ethoxyethyl groups, 1-ethoxyethyl groups and t-butoxycarbonyl groups, or 1-ethoxyethyl groups and t-butyl groups. The resin composition is sensitive to deep ultraviolet rays and charged particles such as electron beams, exhibits excellent resolution performance and pattern shape-forming capability, and suppresses a nano-edge roughness phenomenon to a minimal extent.

    摘要翻译： 一种辐射敏感性树脂组合物，其包含（A）光酸产生剂如2,4,6-三甲基苯基二苯基锍2,4-二氟苯磺酸盐或2,4,6-三甲基苯基二苯基锍4-三氟甲基苯磺酸盐和（B）具有缩醛结构的树脂，以 一部分酚羟基的氢原子被1-乙氧基乙基，1-乙氧基乙基，叔丁氧基羰基或1-乙氧基乙基和叔丁基代替的聚（对 - 羟基苯乙烯）树脂。 树脂组合物对深紫外线和电子束等带电粒子敏感，显示出优异的分辨率性能和图案形状形成能力，并且在最小程度上抑制纳米边缘粗糙度现象。