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    Barrier layers for oxide superconductor devices and circuits
    2.
    发明授权
    Barrier layers for oxide superconductor devices and circuits 失效
    氧化物超导体器件和电路的阻挡层

    公开(公告)号：US5696392A

    公开(公告)日：1997-12-09

    申请号：US345318

    申请日：1994-11-28

    申请人： Kookrin Char ,  Theodore H. Geballe ,  Brian H. Moeckly

    发明人： Kookrin Char ,  Theodore H. Geballe ,  Brian H. Moeckly

    IPC分类号： C01G1/00 ,  C01G3/00 ,  H01L27/18 ,  H01L39/02 ,  H01L39/22 ,  H01L39/12

    CPC分类号： H01L39/225 ,  H01L27/18 ,  Y10S505/702 ,  Y10S505/781

    摘要： A conductor suitable for use in oxide-based electronic devices and circuits is disclosed. Metallic oxides having the general composition AMO.sub.3, where A is a rare or alkaline earth or an alloy of rare or alkaline earth elements, and M is a transition metal, exhibit metallic behavior and are compatible with high temperature ceramic processing. Other useful metallic oxides have compositions (A.sub.1-x A'.sub.x)A".sub.2 (M.sub.1-y M'.sub.y).sub.3 O.sub.7-.delta. or (A.sub.1-x A'.sub.x).sub.m (M.sub.1-y M'.sub.y).sub.n O.sub.2m+n, where 0.ltoreq.x, y.ltoreq.1 and 0.5.ltoreq.m, n.ltoreq.3, A and A' are rare or alkaline earths, or alloys of rare or alkaline earths, A' and A" are alkaline earth elements, alloys of alkaline earth elements, rare earth elements, alloys of rare earth elements, or alloys of alkaline earth and rare earth elements, and M and M' are transition metal elements or alloys of transition metal elements. The metallic oxides grow epitaxially on oxide superconductors as well as on substrates and buffer layers commonly used for growth of oxide superconductors. The oxide superconductors can also be grown epitaxially on these metallic oxides. Vastly improved performance of superconductor-normal-superconductor (SNS) junctions in high temperature superconductor materials are obtained when the normal material is a metallic oxide of the type disclosed. In the preferred embodiment, the conducting oxide CaRuO.sub.3 is used as the normal material in an SNS junelion with YBa.sub.2 Cu.sub.3 O.sub.7-.delta. as superconductor. A dc superconducting quantum interference device (SQUID) functioning at 77K fabricated with this type of junction exhibits large modulation and low noise.

    摘要翻译： 公开了一种适用于氧化物基电子器件和电路的导体。 具有一般组成AMO3的金属氧化物，其中A是稀土或碱土金属或稀土或碱土金属的合金，M是过渡金属，具有金属性能并与高温陶瓷加工兼容。 其它有用的金属氧化物具有组成（A1-xA'x）A'2（M1-yM'y）3O7-δ或（A1-xA'x）m（M1-yM'y）nO2m + n，其中0 < / = x，y <= 1和0.5

    Method of reducing decay of magnetic shielding current in high T.sub.c superconductors
    7.
    发明授权
    Method of reducing decay of magnetic shielding current in high T.sub.c superconductors 失效
    降低高Tc超导体磁屏蔽电流衰减的方法

    公开(公告)号：US5270291A

    公开(公告)日：1993-12-14

    申请号：US615087

    申请日：1990-11-19

    申请人： Jonathan Z. Sun ,  Theodore H. Geballe ,  Bruce Lairson

    发明人： Jonathan Z. Sun ,  Theodore H. Geballe ,  Bruce Lairson

    IPC分类号： H05K9/00 ,  H01B12/00

    CPC分类号： H05K9/0077 ,  Y10S505/726 ,  Y10S505/78

    摘要： Magnetic shielding currents having a critical current density, Jc, at a superconducting temperature are stabilized by reducing the temperature of the superconducting body after a steady state or persistent current is established. The current density of the current at the reduced temperature is below the critical current density for the material at the reduced temperature. Decay of the magnetic shielding current at the reduced temperature is significantly reduced.

    摘要翻译： 在超导温度下具有临界电流密度Jc的磁屏蔽电流通过在稳定状态或持续电流建立后降低超导体的温度来稳定。 在降低的温度下，电流的电流密度低于材料在降低温度下的临界电流密度。 降低温度下磁屏蔽电流的衰减显着降低。