Method of manufacturing oxide superconductor
    3.
    发明授权
    Method of manufacturing oxide superconductor 失效
    制造氧化物超导体的方法

    公开(公告)号:US5652199A

    公开(公告)日:1997-07-29

    申请号:US360407

    申请日:1994-12-21

    CPC分类号: C04B35/45 H01L39/2419

    摘要: A method of manufacturing an oxide superconductor, including the steps of mixing oxide materials of the metals contained in an oxide superconductor represented by HgBa.sub.2 Ca.sub.2 Cu.sub.3 O.sub.8+y to prepare a powder mixture of the composition noted above, molding the powder mixture to prepare a molded body of a desired shape, and applying a heat treatment to the molded body within a hermetic container at a temperature sufficient for bringing about a solid phase reaction of the oxide materials for at least 20 hours. Also provided is a method of manufacturing an oxide superconductor, including the steps of mixing at least one additive element selected from the group consisting of Pb, Bi, Tl, Au, Pt, Ag, Cd and In with oxide materials of the metals contained in a Hg-series 1223 type oxide superconductor to prepare a powder mixture, molding the powder mixture to prepare a molded body of a desired shape, and applying a heat treatment to the molded body within a hermetic container at a temperature sufficient for bringing about a solid phase reaction of the oxide materials for at least 10 hours.

    摘要翻译: 一种制造氧化物超导体的方法,包括以下步骤:将由HgBa2Ca2Cu3O8 + y表示的氧化物超导体中所含的金属的氧化物材料混合,制备上述组合物的粉末混合物,模制该粉末混合物以制备 所需的形状,并且在足以使氧化物材料的固相反应至少20小时的温度下在密封容器内对成型体进行热处理。 还提供了一种制造氧化物超导体的方法,包括以下步骤:将选自Pb,Bi,Tl,Au,Pt,Ag,Cd和In中的至少一种添加元素与包含在其中的金属的氧化物材料混合 一种Hg系1223型氧化物超导体,以制备粉末混合物,模塑该粉末混合物以制备所需形状的成型体,并且在足以产生固体的温度下对密闭容器内的成型体进行热处理 氧化物材料的相位反应至少10小时。

    Driving circuit
    7.
    发明申请
    Driving circuit 失效
    驱动电路

    公开(公告)号:US20070285863A1

    公开(公告)日:2007-12-13

    申请号:US11715431

    申请日:2007-03-08

    申请人: Makoto Itoh

    发明人: Makoto Itoh

    IPC分类号: H02H3/08

    摘要: When a driving signal changes from L level to H level, a switching-circuit is turned on. Then, a gate current flows from a booster circuit to MOSFET through the switching circuit and a resistor. A gate monitor circuit outputs a drive abnormality detection signal of L level when the gate current exceeds a predetermined threshold value. A switching circuit and MOSFET are also similarly driven by a driving signal, and a gate monitor circuit also similarly outputs a drive abnormality detection signal of the L level. When the drive abnormality detection signal changes to the L level, the driving signals are brought to the L level, and the MOSFETs are separated from the booster circuit.

    摘要翻译: 当驱动信号从L电平变为H电平时,开关电路导通。 然后,栅极电流通过开关电路和电阻器从升压电路流向MOSFET。 当栅极电流超过预定阈值时,栅极监视电路输出L电平的驱动异常检测信号。 开关电路和MOSFET也类似地由驱动信号驱动,栅极监视电路也类似地输出L电平的驱动异常检测信号。 当驱动异常检测信号变为L电平时,驱动信号变为L电平,MOSFET与升压电路分离。

    Soft gelatin capsule
    8.
    发明授权
    Soft gelatin capsule 失效
    软明胶胶囊

    公开(公告)号:US06280767B1

    公开(公告)日:2001-08-28

    申请号:US09414863

    申请日:1999-10-08

    IPC分类号: A61K948

    摘要: The present invention relates to a chewable soft gelatin capsule and a soft gelatin capsule of the torsional opening type, the capsule having a shell which includes: (A) gelatin (B) one or more plasticizers selected from among (b1)-(b3) below, in a total amount of 100-600 parts by weight based on 100 parts by weight of gelatin; (b1) glycerin (b2) a sugar selected from among D-sorbitol, sucrose, mannitol, fructose, sugar alcohol, and isomerized sugar (b3) a glycol selected from propylene glycol and ethylene glycol, and (C) a water-insoluble cellulose.

    摘要翻译: 本发明涉及一种咀嚼软明胶胶囊和一种具有壳体的软明胶胶囊,该胶囊具有:(A)明胶(B)一种或多种选自(b1) - (b3)中的增塑剂, 相对于100重量份明胶,总计为100-600重量份;(b1)甘油(b2)选自D-山梨醇,蔗糖,甘露糖醇,果糖,糖醇和异构化糖中的糖 (b3)选自丙二醇和乙二醇的二醇,(C)水不溶性纤维素。

    (Hg,Pb)-Ba-Ca-Cu-O superconductor and method of manufacturing the same
    9.
    发明授权
    (Hg,Pb)-Ba-Ca-Cu-O superconductor and method of manufacturing the same 失效
    (Hg,Pb)-Ba-Ca-Cu-O超导体及其制造方法

    公开(公告)号:US5444039A

    公开(公告)日:1995-08-22

    申请号:US304494

    申请日:1994-09-12

    摘要: The oxide superconductor according to the present invention is represented by (Hg.sub.1-x Pb.sub.x)Ba.sub.2 Ca.sub.2 Cu.sub.3 O.sub..delta. (0.08.ltoreq.x.ltoreq.0.41, 7.625.ltoreq..delta..ltoreq.9.15), and has a crystal structure in which a lamination unit of (Hg, Pb)O.sub.z -BaO-CuO.sub.2 -Ca-CuO.sub.2 -Ca-CuO.sub.2 -BaO is laminated in a c-axial direction of the crystal structure (0.625.ltoreq.z.ltoreq.2.15). Further, the method of manufacturing an oxide superconductor, according to the present invention, includes the steps of: mixing material powders of HgO, PbO, BaO, CaO and CuO at a mole ratio of (Hg.sub.1-x Pb.sub.x):Ba:Ca:Cu=a:2:b:c (1.ltoreq.a.ltoreq.2.5, 2.ltoreq.b.ltoreq.3, 2.5.ltoreq.c.ltoreq.4) and compression-molding the mixture powder into a compact; and subjecting the compact to a thermal treatment at 600.degree.-750.degree. C.

    摘要翻译: 根据本发明的氧化物超导体由(Hg1-xPbx)Ba2Ca2Cu3Oδ(0.08≤x≤0.441,7.625≤δ= 9.15)表示,并且具有晶体结构,其中层压单元 (Hg,Pb)Oz-BaO-CuO2-Ca-CuO2-Ca-CuO2-BaO在晶体结构的c轴方向上层压(0.625≤z= 2.15)。 此外,根据本发明的氧化物超导体的制造方法包括以下步骤:以(Hg1-xPbx):Ba:Ca:Cu的摩尔比混合HgO,PbO,BaO,CaO和CuO的材料粉末 = a:2:b:c(1)将混合粉末压缩成型成型体; 并在600〜750℃下进行热处理。

    Driving circuit
    10.
    发明授权
    Driving circuit 失效
    驱动电路

    公开(公告)号:US07531920B2

    公开(公告)日:2009-05-12

    申请号:US11715431

    申请日:2007-03-08

    申请人: Makoto Itoh

    发明人: Makoto Itoh

    摘要: When a driving signal changes from L level to H level, a switching circuit is turned on. Then, a gate current flows from a booster circuit to MOSFET through the switching circuit and a resistor. A gate monitor circuit outputs a drive abnormality detection signal of L level when the gate current exceeds a predetermined threshold value. A switching circuit and MOSFET are also similarly driven by a driving signal, and a gate monitor circuit also similarly outputs a drive abnormality detection signal of the L level. When the drive abnormality detection signal changes to the L level, the driving signals are brought to the L level, and the MOSFETs are separated from the booster circuit.

    摘要翻译: 当驱动信号从L电平变为H电平时,开关电路导通。 然后,栅极电流通过开关电路和电阻器从升压电路流向MOSFET。 当栅极电流超过预定阈值时,栅极监视电路输出L电平的驱动异常检测信号。 开关电路和MOSFET也类似地由驱动信号驱动,栅极监视电路也类似地输出L电平的驱动异常检测信号。 当驱动异常检测信号变为L电平时,驱动信号变为L电平,MOSFET与升压电路分离。