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    SENSOR HAVING ORGANIC FIELD EFFECT TRANSISTORS
    2.
    发明申请
    SENSOR HAVING ORGANIC FIELD EFFECT TRANSISTORS 审中-公开
    传感器有机场效应晶体管

    公开(公告)号：US20090066345A1

    公开(公告)日：2009-03-12

    申请号：US10599470

    申请日：2005-03-30

    申请人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Grzegorz Darlinski ,  Rainer Waser ,  Ralf Brederlow

    发明人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Grzegorz Darlinski ,  Rainer Waser ,  Ralf Brederlow

    IPC分类号： G01R27/26 ,  H01L51/05

    CPC分类号： G06K9/00053

    摘要： A force sensor based on an organic field effect transistor applied on a substrate is disclosed. In one embodiment, a mechanical force acting on the transistor causes a change in its source-drain voltage or its source-drain current which corresponds to said force and which can in each case be detected as measurement quantity for the acting force, a diaphragm-based pressure sensor that uses a force sensor of this type, a one- or two-dimensional position sensor that uses a multiplicity of force sensors of this type, and a fingerprint sensor that uses a multiplicity of such force sensors.

    摘要翻译： 公开了一种基于施加在衬底上的有机场效应晶体管的力传感器。 在一个实施例中，作用在晶体管上的机械力引起其源极 - 漏极电压或其源极 - 漏极电流的变化，其对应于所述力，并且在每种情况下都可以被检测为作用力的测量量， 使用这种力传感器的基于压力的传感器，使用这种类型的多个力传感器的一维或二维位置传感器，以及使用多个这样的力传感器的指纹传感器。

    Integrated Circuit Comprising an Organic Semiconductor, and Method for the Production of an Integrated Circuit
    6.
    发明申请
    Integrated Circuit Comprising an Organic Semiconductor, and Method for the Production of an Integrated Circuit 有权
    包含有机半导体的集成电路以及集成电路的制造方法

    公开(公告)号：US20080315192A1

    公开(公告)日：2008-12-25

    申请号：US12188966

    申请日：2008-08-08

    申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Andreas Walter ,  Ute Zschieschang

    发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Andreas Walter ,  Ute Zschieschang

    IPC分类号： H01L51/05

    CPC分类号： H01B3/442 ,  H01L51/052

    摘要： An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.

    摘要翻译： 本发明的一个实施例提供一种具有介电层的有机场效应晶体管（OFET）的集成电路。 介电层由聚合物制剂制备，包括：约100份至少一种可交联的基础聚合物，约10至约20份至少一种作为亲电交联成分的二 - 或三苄醇化合物，约0.2至约 10份至少一种光酸产生剂和至少一种溶剂。 另一实施例提供半导体制造方法。 该方法包括将聚合物制剂施用于基材表面，干燥聚合物制剂，干燥后交联聚合物制剂，以及在交联后烘烤聚合物制剂。

    Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors
    7.
    发明申请
    Ultrathin Dielectrics and the Application Thereof in Organic Field Effect Transistors 审中-公开
    超薄电介质及其在有机场效应晶体管中的应用

    公开(公告)号：US20080290337A1

    公开(公告)日：2008-11-27

    申请号：US11568791

    申请日：2005-11-17

    申请人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Guenter Schmid ,  Franz Effenberger

    发明人： Marcus Halik ,  Hagen Klauk ,  Ute Zschieschang ,  Guenter Schmid ,  Franz Effenberger

    IPC分类号： H01L51/10 ,  H01L51/40

    CPC分类号： H01L51/052 ,  H01L51/0012 ,  H01L51/0533 ,  H01L51/0541 ,  H01L51/0545

    摘要： An organic field effect transistor, having a substrate, a source electrode, a drain electrode and a gate electrode and an organic semiconductor material is disclosed. Arranged between the gate electrode and the organic semiconductor material is a dielectric layer (gate dielectric) obtained from a self-assembled monolayer of an organic compound having an anchor group, a linker group, a head group, and an aliphatic orientating group, the anchor group, the linker group, the head group, and the aliphatic orientating group being combined with one another in the order stated.

    摘要翻译： 公开了一种具有基板，源电极，漏电极和栅电极以及有机半导体材料的有机场效应晶体管。 在栅电极和有机半导体材料之间布置的是从具有锚定基团，连接基团，头基团和脂族取向基团的有机化合物的自组装单层获得的电介质层（栅极电介质），所述锚 基团，连接基团，头基团和脂族取代基团按所述顺序彼此组合。

    Compound, semiconductor component, and method for producing a semiconductor component comprising an organic memory material
    9.
    发明申请
    Compound, semiconductor component, and method for producing a semiconductor component comprising an organic memory material 审中-公开
    化合物，半导体组分和用于制造包含有机存储材料的半导体组件的方法

    公开(公告)号：US20060211257A1

    公开(公告)日：2006-09-21

    申请号：US11364134

    申请日：2006-02-28

    申请人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Ute Zschieschang

    发明人： Marcus Halik ,  Hagen Klauk ,  Guenter Schmid ,  Ute Zschieschang

    IPC分类号： H01L21/302 ,  H01L21/461

    CPC分类号： H01L51/0591 ,  B82Y10/00 ,  G11C13/0014 ,  H01L27/28 ,  H01L51/0012 ,  H01L51/0094 ,  H01L51/0595

    摘要： The invention relates to a compound comprising at least one memory unit consisting of an organic memory material, especially for use in CMOS structures, said compound being characterized by a) at least one first anchor group (1) provided with a reactive group for covalently bonding to a first electrode (10), especially a bottom electrode of a memory cell (102), and b) at least one second anchor group (2) provided with a reactive group for bonding to a second electrode (20), especially a top electrode of a memory cell (102). The invention also relates to a semiconductor component, and to a method for producing a semiconductor component. The invention thus provides a compound, a semiconductor component, and a method for producing the semiconductor component, by which means molecular memory layers can be efficiently formed on conventional substrates.

    摘要翻译： 本发明涉及包含由有机记忆材料组成的至少一个存储单元的化合物，特别是用于CMOS结构的化合物，所述化合物的特征在于a）至少一个第一锚定基团（1），其设有用于共价键合的反应性基团 特别是第一电极（10），特别是存储单元（102）的底部电极，以及b）至少一个第二锚定组（2），其设置有用于结合到第二电极（20）的反应性基团，特别是顶部 存储单元（102）的电极。 本发明还涉及半导体部件，以及半导体部件的制造方法。 因此，本发明提供了一种化合物，半导体组件和用于制造半导体组件的方法，通过该方法，可以在常规基板上有效地形成分子存储层。

    Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric
    10.
    发明授权
    Method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric 有权
    用有机化合物的自组装单层作为栅极电介质的电镀场效应晶体管的方法

    公开(公告)号：US07390703B2

    公开(公告)日：2008-06-24

    申请号：US11062766

    申请日：2005-02-22

    申请人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Stefan Braun

    发明人： Hagen Klauk ,  Marcus Halik ,  Ute Zschieschang ,  Guenter Schmid ,  Stefan Braun

    IPC分类号： H01L21/00 ,  H01L21/84 ,  H01L51/40

    CPC分类号： H01L51/0516 ,  B82Y10/00 ,  B82Y30/00 ,  H01L21/31687

    摘要： A method for through-plating field effect transistors with a self-assembled monolayer of an organic compound as gate dielectric includes through-plating by patterning a gate electrode material, and bringing an organic compound having dielectric properties into contact with the contact hole material and the gate electrode material. A contact hole material and the gate electrode material are at least partially uncovered. The contact hole is material not identical to the gate electrode material. A self-assembled monolayer of the organic compound is formed above the gate electrode material. The method also includes depositing and patterning the source and drain contacts without removing the self-assembled monolayer of the organic compound, and depositing a semiconductor material.

    摘要翻译： 用有机化合物的自组装单层作为栅极电介质的电镀场效应晶体管的方法包括通过图案化栅电极材料的通镀，以及使具有介电特性的有机化合物与接触孔材料接触， 栅电极材料。 接触孔材料和栅电极材料至少部分地不被覆盖。 接触孔是与栅电极材料不同的材料。 有机化合物的自组装单层形成在栅电极材料上方。 该方法还包括在不去除有机化合物的自组装单层和沉积半导体材料的情况下沉积和图案化源极和漏极接触。