公开(公告)号：US07258928B2

公开(公告)日：2007-08-21

申请号：US11192488

申请日：2005-07-29

申请人： Mariappan Parans Paranthaman ,  Urs Schoop ,  Amit Goyal ,  Cornelis Leo Hans Thieme ,  Darren T. Verebelyi ,  Martin W. Rupich

发明人： Mariappan Parans Paranthaman ,  Urs Schoop ,  Amit Goyal ,  Cornelis Leo Hans Thieme ,  Darren T. Verebelyi ,  Martin W. Rupich

IPC分类号： B32B15/04 ,  B32B9/00

CPC分类号： C23C14/083 ,  H01L39/2461

摘要： A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the metallic substrate, the biaxially textured buffer layer comprising Y2O3 and a dopant for blocking cation diffusion through the Y2O3, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

公开(公告)号：US07683010B2

公开(公告)日：2010-03-23

申请号：US11192487

申请日：2005-07-29

申请人： Mariappan Parans Paranthaman ,  Urs Schoop ,  Amit Goyal ,  Cornelis Leo Hans Thieme ,  Darren T. Verebelyi ,  Martin W. Rupich

发明人： Mariappan Parans Paranthaman ,  Urs Schoop ,  Amit Goyal ,  Cornelis Leo Hans Thieme ,  Darren T. Verebelyi ,  Martin W. Rupich

IPC分类号： H01L39/24

CPC分类号： H01L39/2461

摘要： A laminated conductor includes a metallic substrate having a surface, a biaxially textured buffer layer supported by the surface of the substrate, the biaxially textured buffer layer comprising LZO and a dopant for mitigating metal diffusion through the LZO, and a biaxially textured conductor layer supported by the biaxially textured buffer layer.

摘要翻译： 层叠导体包括具有表面的金属基板，由基板的表面支撑的双轴织构的缓冲层，包含LZO的双轴织构缓冲层和用于减轻通过LZO的金属扩散的掺杂​​剂，以及双轴织构化的导体层， 双轴纹理缓冲层。

公开(公告)号：US20120264615A1

公开(公告)日：2012-10-18

申请号：US13088182

申请日：2011-04-15

申请人： Amit Goyal ,  Mariappan Parans Paranthaman ,  Sung Hun Wee

发明人： Amit Goyal ,  Mariappan Parans Paranthaman ,  Sung Hun Wee

IPC分类号： H01L39/24 ,  C30B19/00

CPC分类号： H01B12/00 ,  C30B5/00 ,  C30B29/22 ,  C30B29/225 ,  H01L39/126 ,  H01L39/24 ,  H01L39/2425 ,  H01L39/2461

摘要： A method for making a superconducting article includes the steps of providing a biaxially textured substrate. A seed layer is then deposited. The seed layer includes a double perovskite of the formula A2B′B″O6, where A is rare earth or alkaline earth metal and B′ and B″ are different rare earth or transition metal cations. A superconductor layer is grown epitaxially such that the superconductor layer is supported by the seed layer.

摘要翻译： 制造超导制品的方法包括提供双轴织构化基底的步骤。 然后沉积种子层。 种子层包括式A2B'B“O6的双钙钛矿，其中A是稀土或碱土金属，B'和B”是不同的稀土或过渡金属阳离子。 外延生长超导体层，使得超导体层由种子层支撑。

公开(公告)号：US20120082904A1

公开(公告)日：2012-04-05

申请号：US12895487

申请日：2010-09-30

申请人： Gilbert M. Brown ,  Mariappan Parans Paranthaman ,  Sheng Dai ,  Nancy J. Dudney ,  Arumugan Manthiram ,  Timothy J. Mclntyre ,  Xiago-Guang Sun

发明人： Gilbert M. Brown ,  Mariappan Parans Paranthaman ,  Sheng Dai ,  Nancy J. Dudney ,  Arumugan Manthiram ,  Timothy J. Mclntyre ,  Xiago-Guang Sun

IPC分类号： H01M10/02 ,  H01M4/58 ,  H01M6/16 ,  H01M6/04 ,  H01M10/04 ,  H01M4/50 ,  H01M4/02

CPC分类号： H01M10/054 ,  H01M4/38 ,  H01M4/463 ,  H01M4/483 ,  H01M4/502 ,  H01M4/582 ,  H01M6/14 ,  H01M6/164 ,  H01M10/056 ,  H01M10/0568 ,  H01M10/0569 ,  H01M2300/0045 ,  Y10T29/49108

摘要： Compositions and methods of making are provided for a high energy density aluminum battery. The battery comprises an anode comprising aluminum metal. The battery further comprises a cathode comprising a material capable of intercalating aluminum ions during a discharge cycle and deintercalating the aluminum ions during a charge cycle. The battery further comprises an electrolyte capable of supporting reversible deposition and stripping of aluminum at the anode, and reversible intercalation and deintercalation of aluminum at the cathode.

摘要翻译： 为高能量密度铝电池提供组合物和制备方法。 电池包括包含铝金属的阳极。 电池还包括阴极，其包括能够在放电循环期间插入铝离子并在充电循环期间使铝离子脱嵌的材料。 电池还包括能够支持在阳极处可逆地沉积和剥离铝的电解质，以及在阴极可逆插入和脱铝。

公开(公告)号：US08647915B2

公开(公告)日：2014-02-11

申请号：US12974425

申请日：2010-12-21

申请人： Tolga Aytug ,  David K. Christen ,  Mariappan Parans Paranthaman ,  Özgur Polat

发明人： Tolga Aytug ,  David K. Christen ,  Mariappan Parans Paranthaman ,  Özgur Polat

IPC分类号： H01L31/0352 ,  H01L31/18

CPC分类号： H01L31/035281 ,  H01L31/032 ,  H01L31/047 ,  H01L31/072 ,  H01L31/18 ,  Y02E10/50

摘要： A hetero-junction device and fabrication method in which phase-separated n-type and p-type semiconductor pillars define vertically-oriented p-n junctions extending above a substrate. Semiconductor materials are selected for the p-type and n-type pillars that are thermodynamically stable and substantially insoluble in one another. An epitaxial deposition process is employed to form the pillars on a nucleation layer and the mutual insolubility drives phase separation of the materials. During the epitaxial deposition process, the orientation is such that the nucleation layer initiates propagation of vertical columns resulting in a substantially ordered, three-dimensional structure throughout the deposited material. An oxidation state of at least a portion of one of the p-type or the n-type semiconductor materials is altered relative to the other, such that the band-gap energy of the semiconductor materials differ with respect to stoichiometric compositions and the device preferentially absorbs particular selected bands of radiation.

摘要翻译： 一种异相结器件和制造方法，其中相分离的n型和p型半导体柱限定在衬底上方延伸的垂直取向的p-n结。 选择半导体材料用于热力学稳定且基本上彼此不溶的p型和n型支柱。 使用外延沉积工艺在成核层上形成支柱，并且相互不溶性驱动材料的相分离。 在外延沉积工艺期间，取向是使成核层开始垂直列的传播，导致整个沉积材料的基本有序的三维结构。 p型或n型半导体材料中的一种的至少一部分的氧化态相对于另一种改变，使得半导体材料的带隙能量相对于化学计量组成不同，并且器件优先 吸收特定选定的辐射带。

公开(公告)号：US20110160066A1

公开(公告)日：2011-06-30

申请号：US12648748

申请日：2009-12-29

申请人： Tolga Aytug ,  Mariappan Parans Paranthaman ,  Ozgur Polat

发明人： Tolga Aytug ,  Mariappan Parans Paranthaman ,  Ozgur Polat

IPC分类号： H01L39/24 ,  C23C14/34 ,  C23C14/35

CPC分类号： H01L39/2483 ,  C23C14/024 ,  C23C14/08 ,  C23C14/35 ,  C23C14/5806 ,  H01L39/2461 ,  Y10T428/25

摘要： The present invention relates to a method for producing a phase-separated layer useful as a flux pinning substrate for a superconducting film, wherein the method includes subjecting at least a first and a second target material to a sputtering deposition technique in order that a phase-separated layer is deposited epitaxially on a primary substrate containing an ordered surface layer. The invention is also directed to a method for producing a superconducting tape containing pinning defects therein by depositing a superconducting film on a phase-separated layer produced by the method described above.

摘要翻译： 本发明涉及一种用于制造用作超导膜的磁通钉扎基材的相分离层的方法，其中该方法包括使至少第一和第二靶材料进行溅射沉积技术， 外层分层沉积在含有有序表面层的主基底上。 本发明还涉及通过在通过上述方法制备的相分离层上沉积超导膜来制造其中含有钉扎缺陷的超导带的方法。

公开(公告)号：US08920767B2

公开(公告)日：2014-12-30

申请号：US13213923

申请日：2011-08-19

申请人： Xiaofeng Qiu ,  Mariappan Parans Paranthaman ,  Miaofang Chi ,  Ilia N. Ivanov ,  Zhenyu Zhang

发明人： Xiaofeng Qiu ,  Mariappan Parans Paranthaman ,  Miaofang Chi ,  Ilia N. Ivanov ,  Zhenyu Zhang

IPC分类号： C01G23/047 ,  H01L31/0352 ,  H01B1/08 ,  H01L31/18

CPC分类号： H01B1/08 ,  H01L31/035218 ,  H01L31/035281 ,  H01L31/18 ,  Y02E10/50 ,  Y10T428/2913 ,  Y10T428/298

摘要： An array of titanium dioxide nanostructures for solar energy utilization includes a plurality of nanotubes, each nanotube including an outer layer coaxial with an inner layer, where the inner layer comprises p-type titanium dioxide and the outer layer comprises n-type titanium dioxide. An interface between the inner layer and the outer layer defines a p-n junction.

摘要翻译： 用于太阳能利用的二氧化钛纳米结构的阵列包括多个纳米管，每个纳米管包括与内层同轴的外层，其中内层包含p型二氧化钛，外层包含n型二氧化钛。 内层和外层之间的界面限定了p-n结。

公开(公告)号：US20120192937A1

公开(公告)日：2012-08-02

申请号：US13016460

申请日：2011-01-28

申请人： Mariappan Parans Paranthaman ,  Sung-Hun Wee ,  Frederick A. List, III ,  Claudia Cantoni ,  Lee Heatherly, JR. ,  Kyunghoon Kim ,  Thomas R. Fanning ,  Jon Bornstein

发明人： Mariappan Parans Paranthaman ,  Sung-Hun Wee ,  Frederick A. List, III ,  Claudia Cantoni ,  Lee Heatherly, JR. ,  Kyunghoon Kim ,  Thomas R. Fanning ,  Jon Bornstein

IPC分类号： H01L31/02 ,  H01L31/0368

CPC分类号： H01L31/03921 ,  H01L31/02366 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： A thin film structure for photovoltaic applications includes a biaxially textured metal substrate; a seed layer epitaxially disposed on the metal substrate; a barrier layer comprising SrTiO3 epitaxially disposed on the seed layer; a cap layer comprising γ-Al2O3 epitaxially disposed on the SrTiO3 barrier layer; and a crystalline silicon layer epitaxially disposed on the cap layer, where the cap layer comprises a volume fraction of biaxial texture of at least about 80% and the crystalline silicon layer does not include a metal silicide phase.

摘要翻译： 用于光伏应用的薄膜结构包括双轴织构的金属基底; 外延地设置在所述金属基板上的籽晶层; 外延地设置在种子层上的包含SrTiO 3的阻挡层; 包含外延设置在SrTiO3阻挡层上的γ-Al2O3的覆盖层; 以及外延地设置在所述盖层上的晶体硅层，其中所述盖层包括至少约80％的双轴织构的体积分数，并且所述晶体硅层不包括金属硅化物相。

公开(公告)号：US20120035056A1

公开(公告)日：2012-02-09

申请号：US12850115

申请日：2010-08-04

申请人： TOLGA AYTUG ,  Mariappan Parans Paranthaman ,  Victor A. Maroni ,  Dean J. Miller

发明人： TOLGA AYTUG ,  Mariappan Parans Paranthaman ,  Victor A. Maroni ,  Dean J. Miller

IPC分类号： H01L39/00 ,  H01L39/24

CPC分类号： H01L39/2441 ,  H01L39/2454 ,  Y10T428/24612

摘要： A method of making a superconducting article that involves using MOCVD to deposit onto a uniaxially or biaxially textured surface an epitaxial layer that includes a superconducting material such as REBa2Cu3O7 and a secondary phase comprising at least one dopant, the dopant including Nb, Ta and/or V, or combinations thereof.

摘要翻译： 一种制造超导制品的方法，涉及使用MOCVD在单轴或双轴织构表面上沉积包括超导材料如REBa2Cu3O7的外延层和包含至少一种掺杂剂的次相，所述掺杂剂包括Nb，Ta和/或 V或其组合。

公开(公告)号：US20090137401A1

公开(公告)日：2009-05-28

申请号：US12363035

申请日：2009-01-30

申请人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

发明人： Mariappan Parans Paranthaman ,  Srivatsan Sathyamurthy ,  Tolga Aytug ,  Paul N. Arendt ,  Liliana Stan ,  Stephen R. Foltyn

IPC分类号： H01L39/24 ,  B05D3/00 ,  B05D3/02

CPC分类号： H01L39/2461 ,  Y10S428/93 ,  Y10S505/74 ,  Y10T428/31678

摘要： A superconducting article includes a substrate having an untextured metal surface; an untextured barrier layer of La2Zr2O7 or Gd2Zr2O7 supported by and in contact with the surface of the substrate; a biaxially textured buffer layer supported by the untextured barrier layer; and a biaxially textured superconducting layer supported by the biaxially textured buffer layer. Moreover, a method of forming a buffer layer on a metal substrate includes the steps of: providing a substrate having an untextured metal surface; coating the surface of the substrate with a barrier layer precursor; converting the precursor to an untextured barrier layer; and depositing a biaxially textured buffer layer above and supported by the untextured barrier layer.

摘要翻译： 超导制品包括具有未结合的金属表面的基材; La2Zr2O7或Gd2Zr2O7的非结构化阻挡层由衬底表面支撑并与衬底的表面相接触; 由所述非纹理化阻挡层支撑的双轴纹理缓冲层; 以及由双轴纹理缓冲层支撑的双轴织构化超导层。 此外，在金属基板上形成缓冲层的方法包括以下步骤：提供具有非纹理金属表面的基板; 用阻挡层前体涂覆基材的表面; 将前体转化为无纹理的阻挡层; 并且在非纹理化阻挡层上方并且支撑着双轴织构化的缓冲层。